Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain — 13 dB @ 60 Watts Efficiency — 45% @ 60 Watts • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1805- 1880 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18060ALR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18060ALSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC ≥ 25°C Derate above 25°C PD 180 1.03 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.97 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF18060ALR3 MRF18060ALSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 160 — pF Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 740 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF 11.5 13 — 43 45 — — — - 10 Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) η Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 - 1880 MHz) IRL dB % dB 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch- to - batch consistency. MRF18060ALR3 MRF18060ALSR3 2 RF Device Data Freescale Semiconductor R2 R1 T1 Z6 VSUPPLY R3 C4 C1 C2 R5 Z1 Z2 Z4 Z5 RF OUTPUT Z7 C7 Z3 C6 C5 C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 C3 R4 VBIAS RF INPUT + DUT 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 kΩ Chip Resistors (0805) 2.7 kΩ Chip Resistors (0805) 1.1 kΩ Chip Resistor (0805) BC847 Transistor SOT - 23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47″ x 0.09″ Microstrip 1.16″ x 0.09″ Microstrip 0.57″ x 0.95″ Microstrip 0.59″ x 1.18″ Microstrip 1.26″ x 0.15″ Microstrip 1.15″ x 0.09″ Microstrip 0.37″ x 0.09″ Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2 R3 R1 VSUPPLY C3 C1 R4 C4 C2 T1 R5 C7 C6 C5 Ground Ground MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 3 VBIAS ÎÎÎ ÎÎÎ ÎÎÎ C1 T1 R1 R5 R2 VSUPPLY C2 C4 R3 T2 + C3 R4 C5 R6 RF INPUT Z1 Z2 C6 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 Z3 Z6 Z4 RF OUTPUT Z5 C7 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer Z7 C8 T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass, εr = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic MRF18060ALR3 MRF18060ALSR3 4 RF Device Data Freescale Semiconductor VBIAS Ground Î ÎÎ C4 R1 C1 R2 R3 R4 T2 T1 R5 C2 C3 C7 C5 R6 MRF18060 ÎÎ ÎÎÎ ÎÎ Î Î ÎÎÎÎ Î Î ÎÎ Î VSUPPLY C8 C6 ÎÎ ÎÎ Î ÎÎ Î Î ÎÎÎ ÎÎ Î ÎÎ MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 5 16 100 15 90 Pout , OUTPUT POWER (WATTS) IDQ = 750 mA 13 500 mA 12 11 300 mA 10 100 mA 9 VDD = 26 Vdc f = 1880 MHz 80 60 40 30 18 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 6 W 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 30 1W 20 0.5 W 60 80 55 70 1900 Figure 7. Output Power versus Frequency G ps, POWER GAIN (dB) 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 1 3 4 2 Pin, INPUT POWER (WATTS) 0 −2 Gps −4 13.5 −6 13.0 −8 12.5 −10 12.0 −12 11.5 −14 IRL 10.5 10.0 1700 1800 20 5 6 Figure 8. Output Power and Efficiency versus Input Power 14.5 11.0 25 15 0 15.0 14.0 40 40 0 1880 45 Pout 50 10 1840 1860 f, FREQUENCY (MHz) 50 h 60 0 1820 30 28 90 10 1800 22 26 24 VDD, SUPPLY VOLTAGE (VOLTS) 20 Figure 6. Output Power versus Supply Voltage 90 40 VDD = 26 Vdc IDQ = 500 mA 10 0 Figure 5. Power Gain versus Output Power 80 1W 20 100 10 Pout, OUTPUT POWER (WATTS) 2.5 W 50 8 1 Pin = 5 W 70 η, DRAIN EFFICIENCY (%) 14 1900 f, FREQUENCY (MHz) −16 VDD = 26 Vdc IDQ = 500 mA 2000 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) −18 −20 2100 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060ALR3 MRF18060ALSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 1700 MHz f = 2100 MHz f = 1700 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz Zsource Ω Zload Ω 1700 0.60 - j2.53 2.27 - j3.44 1800 0.80 - j3.20 2.05 - j3.05 1900 0.92 - j3.42 1.90 - j2.90 2000 1.07 - j3.59 1.64 - j2.88 2100 1.31 - j4.00 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF18060ALR3 MRF18060ALSR3 8 RF Device Data Freescale Semiconductor NOTES MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF18060ALR3 MRF18060ALSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N T A M B M M ccc M T A M M aaa M T A M S (LID) ccc H R (INSULATOR) T A M B M (LID) B M (INSULATOR) B M C F E A T A SEATING PLANE 4X U (FLANGE) 1 K 2X 2 D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M C 3 A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H E MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF CASE 465 - 06 ISSUE G NI - 780 MRF18060ALR3 (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF18060ALSR3 MRF18060ALR3 MRF18060ALSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18060ALR3 MRF18060ALSR3 Document Number: MRF18060A Rev. 9, 5/2006 12 RF Device Data Freescale Semiconductor