FREESCALE MRF18090AR3

Freescale Semiconductor
Technical Data
Document Number: MRF18090A
Rev. 7, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF18090AR3
Designed for GSM and GSM EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for GSM and GSM EDGE cellular radio
applications.
• GSM and GSM EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1.80 - 1.88 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465B - 03, STYLE 1
NI - 880
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.7
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF18090AR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.7
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.1
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.2
—
S
Crss
—
4.2
—
pF
12.0
13.5
—
47
52
—
—
—
- 10
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
Common- Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz)
Gps
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz)
η
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1805 - 1880 MHz)
dB
%
IRL
dB
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch - to - batch
consistency.
MRF18090AR3
2
RF Device Data
Freescale Semiconductor
VSUPPLY
R1
C5
VBIAS
+
R3
RF
INPUT
Z2
Z1
Z3
C1
C2, C3
C4
C5, C6
C7
C8
R1, R2
R3
Z1
Z2
Z7
Z6
Z8
Z5
Z4
C3
C4
C6
C8
Z10
C2
R2
C1
+
Z9
RF
OUTPUT
C7
DUT
10 mF, 35 V Tantalum Capacitor,
Vishay - Sprague #293D106X9035D
10 pF, 100B Chip Capacitor , ATC #100B100GW
3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW
6.8 pF, 100B Chip Capacitors, ATC #100B6R8CW
12 pF, 100B Chip Capacitors, ATC #100B120GW
220 mF, 63 V Electrolytic Capacitor, Philips #13668221
10 kW, 1/8 W Chip Resistors (0805)
1.0 kW, 1/8 W Chip Resistor (0805)
0.697″ x 0.087″ Microstrip
0.087″ x 0.197″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
PCB
0.819″ x 0.087″ Microstrip
0.181″ x 0.144″ Microstrip
0.383″ x 1.148″ Microstrip
0.400″ x 1.380″ Microstrip
0.351″ x 0.351″ Microstrip
0.126″ x 0.087″ Microstrip
1.280″ x 0.087″ Microstrip
≈1.275″ x 0.055″ Microstrip
Taconic TLX8 - 0300, 0.030″,
εr = 2.55
Figure 1. MRF18090A 1.80 - 1.88 GHz Test Fixture Schematic
C1
C6
VBIAS
C2
C8
C5
R1
R2
VSUPPLY
C4
C3
CUT OUT AREA
R3
C7
MRF18090A
Rev 4
Ground
(bias)
Ground
(supply)
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF18090A 1.80 - 1.88 GHz Test Fixture Component Layout
MRF18090AR3
RF Device Data
Freescale Semiconductor
3
ÎÎÎ
ÎÎÎ
ÎÎÎ
C2
C1
T1
T1
R1
VSUPPLY
R6
R2
C5
+
R5
R3
C3
C6
T2
R4
C4
C7
RF
INPUT
C9
Z4
Z1
RF
OUTPUT
Z3
Z2
C8
C10
C1, C3
C2
C4
C5
C6, C7
C8, C9, C10
R1
R2, R3
R4
R5
10 kΩ Chip Resistor (0603)
R6
5 kΩ, SMD Potentiometer
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.210″ x 0.055″ Microstrip
Z2
0.419″ x 0.787″ Microstrip
Z3
0.836″ x 0.512″ Microstrip
Z4
0.164″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon® Glass
1 mF Chip Capacitors (0805)
0.1 mF Chip Capacitor (0805)
1 nF Chip Capacitor (0805)
220 mF, 50 V Electrolytic Capacitor
8.2 pF, 100A Chip Capacitors
22 pF, 100A Chip Capacitors
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
2.2 kΩ Chip Resistor (0805)
Figure 3. 1.80 - 1.88 GHz Demo Board Schematic
VSUPPLY
C1 R1 T 1
R2
R3
Ground
C2
C5
R5
C3
R4
C8
R6
C4
MRF18090A
Î
ÎÎÎÎÎÎ
ÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
T2
C6
C7
ÎÎ
ÎÎ
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
ÎÎÎ
ÎÎ
C9
C10
MRF18090A
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. 1.80 - 1.88 GHz Demo Board Component Layout
MRF18090AR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
120
750 mA
14
500 mA
13
12
300 mA
11
VDD = 26 Vdc
f = 1880 MHz
Pin = 3.65 W
80
2W
60
40
1W
20
10
0
0.1
100
1.0
10
Pout, OUTPUT POWER (WATTS)
12
Figure 5. Power Gain versus
Output Power
14
16
22
26
18
20
24
VDD, SUPPLY VOLTAGE (VOLTS)
28
30
120
90
Pout , OUTPUT POWER (WATTS)
Pin = 3.65 W
80
70
2W
60
50
VDD = 26 Vdc
IDQ = 750 mA
40
1W
30
20
10
0
60
100
50
h
80
40
Pout
60
30
20
40
VDD = 26 Vdc
IDQ = 750 mA
f = 1880 MHz
20
10
0
0
1.795
1.815
1.835
1.855
f, FREQUENCY (GHz)
32
Figure 6. Output Power versus Supply Voltage
100
Pout , OUTPUT POWER (WATTS)
IDQ = 750 mA
f = 1880 MHz
100
1.895
1.875
Figure 7. Output Power versus Frequency
η, DRAIN EFFICIENCY (%)
G ps, POWER GAIN (dB)
Pout , OUTPUT POWER (WATTS)
IDQ = 1000 mA
15
0
1
2
3
Pin, INPUT POWER (WATTS)
4
5
Figure 8. Output Power and Efficiency
versus Input Power
15
0
G ps, POWER GAIN (dB)
−5
−10
12
−15
IRL
−20
9
VDD = 26 Vdc
IDQ = 750 mA
−25
IRL, INPUT RETURN LOSS (dB)
Gps
−30
6
1.75
1.80
1.85
f, FREQUENCY (GHz)
1.90
1.95
Figure 9. Wideband Gain and IRL
(at Small Signal)
MRF18090AR3
RF Device Data
Freescale Semiconductor
5
f = 1805 MHz
Zload
Zo = 10 Ω
f = 1990 MHz
f = 1990 MHz
f = 1805 MHz
Zsource
VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW)
f
MHz
Zsource
Ω
Zload
Ω
1805
1.10 - j5.85
1.15 - j2.16
1880
1.56 - j6.75
1.13 - j2.60
1930
2.05 - j8.00
1.30 - j2.23
1990
2.30 - j7.30
0.82 - j2.90
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Large Signal Source and Load Impedance
MRF18090AR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
4
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
M
B
M
R
M
bbb
M
T A
M
B
ccc
M
T A
M
B
M
T A
M
aaa
M
T A
M
(INSULATOR)
M
N
ccc
S
(FLANGE)
(INSULATOR)
M
F
T
A
M
M
C
A
B
(LID)
(LID)
H
E
B
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF18090AR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF18090AR3
Document Number: MRF18090A
8Rev. 7, 5/2006
RF Device Data
Freescale Semiconductor