FREESCALE MRF21120R6

Freescale Semiconductor
Technical Data
Document Number: MRF21120
Rev. 11, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF21120R6
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 120 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
389
2.22
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.45
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF21120R6
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc )
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 V, ID = 1000 mA)
VGS(Q)
3
3.9
5
Vdc
Drain- Source On - Voltage (1)
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
Crss
—
2.8
—
pF
10.5
11.4
—
30
34.5
—
—
- 31
- 28
Characteristic
Off
Characteristics (1)
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μAdc)
On Characteristics
Dynamic Characteristics (1, 2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
- 12
-9
dB
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
11.5
—
dB
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
η
—
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IMD
—
- 31
—
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
IRL
—
- 12
—
dB
%
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Device measured in push - pull configuration.
(continued)
MRF21120R6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
P1dB
—
120
—
W
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 2170.0 MHz)
Gps
—
10.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 2170.0 MHz)
η
—
42
—
%
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, CW, IDQ = 1000 mA, f1 = 2170.0 MHz)
(1)
(continued)
1. Device measured in push - pull configuration.
MRF21120R6
RF Device Data
Freescale Semiconductor
3
VDD
+
C31
C32
C33
C34
C30
C28
Z40
+
R3
C17
C16
C14
C29
C15
R1
Z6
RF
INPUT
Z8
Z12 C3 Z14 Z16 Z18
Z42
RF
OUTPUT
C12
C13
C5
L3
C7
Z24
R5
Z10
Z41
C27
+
Z4
C35
L5
+
C19
+
+
+
B1
VGG
+
Z26
Z30 Z32 Z34 C9 Z36
Z28
Z20 Z22
Z38
Z1
COAX1
Z2
DUT
COAX2
Z7
L1
Z5
C1
C2
Z9
Z11
COAX3
C8
L2
Z13 C4 Z15 Z17 Z19
COAX4
Z21 Z23
Z25
R2
C11
R6
Z27
Z31 Z33 Z35 C10 Z37
Z29
Z39
L4
C6
+
C22
B2
VGG
+
C20
C37
+
C36
+
C25
R4
C39
C24
C23
C38
C21
VDD
+
+
C40
B1, B2
C1, C2, C12
C3, C4, C9, C10
C5
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C27, C34, C36, C42
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C30, C39
C31, C40
C35, C44
Coax1, Coax2
Coax3, Coax4
L1, L5
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, ATC
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
2.0 pF Chip Capacitors, ATC
0.5 pF Chip Capacitor, ATC
0.2 pF Chip Capacitor, ATC
5.1 pF Chip Capacitors, ATC
91 pF Chip Capacitors, ATC
22 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
0.039 μF Chip Capacitors, ATC
1000 pF Chip Capacitors, ATC
0.022 μF Chip Capacitors, ATC
1.0 μF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
100 μF, 50 V Electrolytic Capacitors, Sprague
470 μF, 63 V Electrolytic Capacitors, Sprague
25 Ω Semi Rigid Coax, 70 mil OD, 1.05″ Long
50 Ω Semi Rigid Coax, 85 mil OD, 1.05″ Long
5.0 nH Minispring Inductors, Coilcraft
8.0 nH Minispring Inductor, Coilcraft
7.15 nH Microspring Inductors, Coilcraft
1 kΩ, 1/4 W Fixed Metal Film Resistors, Dale
270 Ω, 1/8 W Fixed Film Chip Resistors, Dale
1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale
0.150″ x 0.080″ Microstrip
C41
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
C42
+
+
C43
C44
0.320″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.610″ x 0.080″ Microstrip
0.135″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.300″ x 0.350″ Microstrip
0.150″ x 0.500″ Microstrip
0.075″ x 0.500″ Microstrip
0.330″ x 0.500″ Microstrip
0.100″ x 0.550″ Microstrip
0.175″ x 0.550″ Microstrip
0.045″ x 0.550″ Microstrip
0.190″ x 0.325″ Microstrip
0.080″ x 0.325″ Microstrip
0.515″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.565″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.470″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.03″ Teflon®, εr = 2.55 Copper
Clad, 2 oz. Cu
N - Type Panel Mount, Stripline
Figure 1. 2110 - 2200 MHz Broadband Test Circuit Schematic
MRF21120R6
4
RF Device Data
Freescale Semiconductor
C35
C34
226
35K
649
C19
C31
C15
C17
226
35K
649
640
50K
105
C16
C14
B1
R3
VDD
C32 C33
C30
C29
226
35K
649
VGG
C28
C27
C13
R5
C7
L3
R1
L5
C1 C2
C3
C9
C8
C11
L2
C4
C10
L1
R2
C12
C6
R6
L4
C20
226
35K
649
R4
B2
C23
C24
226
35K
649
C36
C37
C21
C22
C39
640
50K
105
VGG
C5
C38
C40
C41 C43
VDD
C25
226
35K
649
C42
C44
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 2110 - 2200 MHz Broadband Test Circuit Component Layout
MRF21120R6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
12
11
1800 mA
1500 mA
1300 mA
1100 mA
1000 mA
850 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
10
600 mA
9
0.10
10
1.0
Pout, OUTPUT POWER (WATTS) PEP
−20
−30
1800 mA
−40
600 mA
1100 mA
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
0.10
Figure 4. Intermodulation Distortion
versus Output Power
45
11
40
35
9
VDD = 28 Vdc, IDQ = 1000 mA
Two−Tone, 100 kHz Tone Spacing
8
−24
−26
VSWR
7
−28
6
−30
5
2100
IMD
2120
2160
2140
f, FREQUENCY (MHz)
2180
−32
2200
20
η
0
−20
−40
ACPR UP
1.0
10
dBm
A
−22.77 dBm
2.17000000 GHz
−2.95 dBm
CH PWR
−45.14 dB
ACR UP
−45.45 dB
ACR LOW
1RM
1.5
−60
−70
−80
−90
1.0
c11
c11
cu1
cu1
−100
c0
c0
1.5 MHz
Span 15 MHz
13
−60
80
60
12
Gps
Gps , POWER GAIN (dB)
10
2
Unit
−50
2.0
Center 2.17 GHz
η, EFFICIENCY (%) ACPR (dB)
Gps , POWER GAIN (dB)
40
4 ACPR DOWN
10 dB
Figure 6. 2.17 GHz W - CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
12
6
RF Att
−40
60
VDD = 28 Vdc
IDQ = 1000 mA
f = 2170 MHz
1
−30
Gps
8
30 kHZ
1 MHz
2s
1 [T1]
−20
Figure 5. Class AB Broadband
Circuit Performance
14
RBW
VBW
SWT
−10
VSWR
Gps , POWER GAIN (dB)
12
MARKER 1 [T1]
−22.77 dBm
2.17000000 GHz
Ref Lv1
−5 dBm
IMD, INTERMODULATION η, EFFICIENCY (%)
DISTORTION (dBc)
50
Gps
10
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
1000 mA
−60
Figure 3. Power Gain versus Output Power
η
850 mA
−50
100
13
1500 mA
1300 mA
11
40
10
20
η
9
8
0
VDD = 28 Vdc, IDQ = 1000 mA
f = 2170.0 MHz, f2 = 2170.1 MHz
−20
7
−40
IMD
6
5
0.10
η, EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
Gps , POWER GAIN (dB)
13
IMD, INTERMODULATION DISTORTION (dBc)
14
1.0
−60
100
10
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W - CDMA)
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
−80
MRF21120R6
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 2110 MHz
f = 2170 MHz
Zsource
Zload
f = 2170 MHz
f = 2110 MHz
VDD = 28 V, IDQ = 1000 mA, Pout = 120 W PEP
f
MHz
Zsource
Ω
2110
3.7 - j2.0
4.9 - j2.8
2140
3.5 - j2.4
5.1 - j2.7
2170
3.1 - j2.5
5.2 - j2.5
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21120R6
RF Device Data
Freescale Semiconductor
7
NOTES
MRF21120R6
8
RF Device Data
Freescale Semiconductor
NOTES
MRF21120R6
RF Device Data
Freescale Semiconductor
9
NOTES
MRF21120R6
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
M
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
CASE 375D - 05
ISSUE E
NI - 1230
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF21120R6
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF21120R6
Document Number: MRF21120
Rev. 11, 5/2006
12
RF Device Data
Freescale Semiconductor