Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21045NR1 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 2110 - 2170 MHz, 10 W AVG., 28 V 2 x W - CDMA, DUAL PATH LATERAL N - CHANNEL RF POWER MOSFET CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 RFinA/VGSA 3 2 RFoutA/VDSA RFinB/VGSB 4 1 RFoutB/VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW Case Temperature 77°C, 10 W CW Symbol RθJC Value (1,2) 1.35 1.48 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF5P21045NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 μAdc) VGS(th) 2 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) — 3.8 — Vdc Fixture Gate Quiescent Voltage (2) (VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) VGG(Q) 6 7.6 10 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.2 Adc) VDS(on) 0.2 0.3 0.35 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.9 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 124 — pF Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 247 — pF Off Characteristics (1) On Characteristics (1) Dynamic Characteristics (1,3) Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 14.5 16.5 dB Drain Efficiency ηD 23.5 25.5 — % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 — - 37 - 35 dBc ACPR — - 39 - 37 dBc IRL — - 12 -8 dB 1. Measurement made with device in single - ended configuration. (See Figure 4, Possible Circuit Topologies) 2. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 3. Part internally matched both on input and output. MRF5P21045NR1 2 RF Device Data Freescale Semiconductor R1 VBIAS VSUPPLY R2 C1 C2 C4 Z7 + C6 C5 C3 Z8 R3 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z14 Z9 Z10 Z11 Z12 C7 Z13 RF OUTPUT C12 C8 DUT C9 C10 Z15 C11 C13 C14 Z1, Z13 Z2 Z3 Z4 Z5 Z6, Z8 Z7 0.250″ x 0.080″ Microstrip 1.012″ x 0.080″ Microstrip 0.165″ x 0.080″ Microstrip 0.378″ x 0.080″ Microstrip 0.365″ x 1.000″ Microstrip 0.115″ x 1.000″ Microstrip 0.510″ x 0.080″ Microstrip Z9 Z10 Z11 Z12 Z14, Z15 PCB C15 0.385″ x 1.000″ Microstrip 0.179″ x 0.080″ Microstrip 0.527″ x 0.080″ Microstrip 0.789″ x 0.080″ Microstrip 0.270″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 2. MRF5P21045NR1 Test Circuit Schematic — Single - Ended Configuration Table 6. MRF5P21045NR1 Test Circuit Component Designations and Values — Single - Ended Configuration Part Description Part Number Manufacturer C1 220 nF Chip Capacitor 18125C224KAT4A AVX C2, C3, C7, C12, C13 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C14, C15 6.8 μF Chip Capacitors C4532X5R1H685MT TDK C6 220 μF, 63 V Electrolytic Capacitor, Radial EMVY630ATR221MKE0S Nippon Chemi - Con C8, C10 1 pF Chip Capacitors ATC100B1R0BT500XT ATC C9 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C11 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061001FKTA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF5P21045NR1 RF Device Data Freescale Semiconductor 3 C1 C4 C5 C2 R1 C3 R2 R3 C6 C8 C12 CUT OUT AREA C7 C9 C10 C11 C13 C14 C15 MRF5P21045N Rev. 0 Figure 3. MRF5P21045NR1 Test Circuit Component Layout — Single - Ended Configuration Single −ended l 4 l 4 l 2 Quadrature combined l 4 Doherty l 2 Push −pull Figure 4. Possible Circuit Topologies MRF5P21045NR1 4 RF Device Data Freescale Semiconductor 28 ηD Gps, POWER GAIN (dB) 14.8 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 500 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 14.6 14.4 14.2 24 20 −28 IRL 14 −32 13.8 −36 IM3 −40 13.6 13.4 2060 ACPR 2080 2100 2120 2140 2160 2180 2200 −7 16 −44 2220 IM3 (dBc), ACPR (dBc) 15 −10 −13 −16 −19 −22 IRL, INPUT RETURN LOSS (dB) 32 15.2 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 5. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts Avg. 14.4 42 ηD 38 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 500 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.2 14 13.8 13.6 13.2 13 2060 −30 ACPR 2080 −18 −26 IM3 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 −5 30 −22 IRL 13.4 34 −34 2220 −8 −11 −14 −17 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 14.6 IM3 (dBc), ACPR (dBc) Gps ηD, DRAIN EFFICIENCY (%) 46 14.8 Figure 6. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts Avg. 17 Gps, POWER GAIN (dB) 16 650 mA 15 500 mA 14 350 mA 13 12 200 mA 11 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements IDQ = 800 mA −20 650 mA IDQ = 200 mA −30 800 mA −40 −50 500 mA 350 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements −60 −70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Two - Tone Power Gain versus Output Power 300 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Third Order Intermodulation Distortion versus Output Power MRF5P21045NR1 RF Device Data Freescale Semiconductor 5 −20 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz Pout, OUTPUT POWER (dBm) −30 IM3 −L IM3 −U −40 IM5 −U IM5 −L −50 IM7 −L IM7 −U −60 0.1 1 100 10 55 54 53 52 51 50 49 48 47 46 45 44 43 42 Ideal P6dB = 47.74 dBm (74.82 W) P3dB = 48.38 dBm (68.8 W) P1dB = 47.78 dBm (60.1 W) Actual VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 2140 MHz 28 29 31 30 33 32 34 35 36 37 38 39 Pin, INPUT POWER (dBm) Figure 10. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TWO −TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing 50 −30_C VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 45 40 35 30 −10 25_C 85_C 25_C −30_C 25_C −15 −20 −25 −30_C −30 −35 25 20 −40 Gps TC = −30_C 15 IM3 10 5 85_C ACPR ηD 1 25_C 40 IM3 (dBc), ACPR (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −45 −50 −55 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 70 TC = −30_C 15 Gps 14 25_C 25_C 50 85_C 40 30 13 12 11 10 0.1 60 20 VDD = 28 Vdc IDQ = 500 mA f = 2140 MHz ηD 1 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 −30_C 85_C 10 10 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF5P21045NR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 108 MTTF (HOURS) Gps, POWER GAIN (dB) 14 12 28 V VDD = 24 V 32 V 10 107 106 IDQ = 500 mA f = 2140 MHz 8 105 6 0 10 20 30 40 50 60 70 80 90 110 130 Pout, OUTPUT POWER (WATTS) CW 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Figure 13. Power Gain versus Output Power This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 25.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 14. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ $5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ $10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 −50 4 6 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −60 0.0001 2 −30 −40 0.001 0 −20 8 10 PEAK −TO−AVERAGE (dB) Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 16. 2-Carrier W-CDMA Spectrum MRF5P21045NR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 2220 MHz f = 2060 MHz Zload f = 2060 MHz Zsource f = 2220 MHz VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz Zsource W Zload W 2060 8.01 - j6.68 4.38 - j4.62 2080 7.66 - j6.94 4.27 - j4.43 2100 7.26 - j7.20 4.12 - j4.04 2120 6.76 - j7.45 3.98 - j3.90 2140 6.28 - j7.71 3.81 - j3.69 2160 5.82 - j7.78 3.73 - j3.50 2180 5.37 - j7.85 3.65 - j3.30 2200 4.92 - j7.85 3.57 - j3.11 2220 4.46 - j7.97 3.49 - j2.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance — Single - Ended Configuration MRF5P21045NR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF5P21045NR1 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 April 2007 Description • Initial Release of Data Sheet MRF5P21045NR1 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF5P21045NR1 Document Number: RF Device Data MRF5P21045N Rev. 0, 4/2007 Freescale Semiconductor 11