Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 648 3.7 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW 190 W Symbol Value (1,2) Unit CW Operation Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 76°C, 44 W CW RθJC °C/W 0.27 0.30 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF6P18190HR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 µAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) — 0.21 — Vdc gfs — 5.3 — S Crss — 1.5 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg., f1 = 1807.5 MHz, f2 = 1817.5 MHz and f1 = 1867.5 MHz, f2 = 1877.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.9 17.5 dB Drain Efficiency ηD 25.5 27.5 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 41 - 38 dBc IRL — - 12 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. MRF6P18190HR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C7 C15 + R1 C6 C5 C16 C17 C18 + + + VSUPPLY C19 C20 C21 Z18 C4 C3 B2 Z12 Z16 Z20 Z22 Z24 Z26 Z28 R2 Z2 RF INPUT Z4 Z6 Z8 Z10 C14 Z14 C2 Z1 R5 Z5 Z3 C1 RF Z31 OUTPUT Z30 Z7 Z9 DUT Z11 Z15 C8 C30 Z17 Z21 Z23 Z25 Z27 Z29 Z13 C22 B3 VBIAS + C13 Z19 + R3 C12 C11 C10 C9 B4 C23 R4 Z1 Z2 Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 0.700″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 2.112″ x 0.067″ Microstrip 0.174″ x 0.067″ Microstrip 0.382″ x 0.250″ Microstrip 0.036″ x 0.764″ Microstrip 0.178″ x 0.764″ Microstrip 0.689″ x 0.073″ Microstrip 0.111″ x 0.764″ Microstrip 0.124″ x 0.856″ Microstrip Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28 Z29 Z30 Z31 PCB C24 C25 C26 + + + C27 C28 C29 VSUPPLY 0.477″ x 0.136″ Microstrip 0.289″ x 0.856″ Microstrip 0.215″ x 0.385″ Microstrip 0.118″ x 0.259″ Microstrip 0.108″ x 0.067″ Microstrip 2.163″ x 0.067″ Microstrip 1.397″ x 0.114″ Microstrip 0.492″ x 0.067″ Microstrip 0.207″ x 0.067″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6P18190H Test Circuit Schematic Table 5. MRF6P18190H Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2, B3, B4 Short RF Beads 2743019447 Fair - Rite C1 0.6 - 4.5 pF Variable Capacitor 27271SL Johanson Components C2, C8, C14, C22 5.6 pF Chip Capacitors 100B5R6CP500X ATC C3, C9 7.5 pF Chip Capacitors 100B7R5CP500X ATC C4, C10, C18, C26 1K pF Chip Capacitors 100B102JP50X ATC C5, C11 1 µF, 50 V Tantalum Capacitors T491C105K050AS Kemet C6, C12, C17, C25 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C7, C13 100 µF, 50 V Electrolytic Capacitors, Radial MCR50V107M8X11 Multicomp C15, C23 6.8 pF Chip Capacitors 600B6R8BT250XT ATC C16, C24 0.56 µF Chip Capacitors (1825) C1825C564J5RAC Kemet C19, C20, C27, C28 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C21, C29 470 µF, 63 V Electrolytic Capacitors, Radial MCR63V477M13X26 Multicomp C30 0.4 - 2.5 pF Variable Capacitor 27283PC Johanson Components R1, R3 1 kW, 1/4 W Chip Resistors (1206) CRCW12061001F100 Vishay R2, R4 12 W, 1/4 W Chip Resistors (1206) CRCW120612R0F100 Vishay R5 560 W Resistor D55342M07B560 Vishay MRF6P18190HR6 RF Device Data Freescale Semiconductor 3 MRF6P18190 Rev. 2 + R1 C6 C7 C5 C4 C15 R2 B1 C20 B2 C14 C8 CUT OUT AREA R5 R4 C30 C22 B3 B4 C27 C9 C28 C24 C13 R3 C12 - C17 C18 C19 C2 C1 C16 + C3 + C21 - C11 C25 C26 + C23 C10 - C29 Figure 2. MRF6P18190H Test Circuit Component Layout MRF6P18190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 16.3 16.2 16.1 16 28 VDD = 28 Vdc Pout = 44 W (Avg.) IDQ = 2000 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) G ηD 27.8 27.6 27.4 ps IM3 15.9 −36 15.8 −38 ACPR 15.7 −40 −42 15.6 15.5 1760 −34 IRL 1780 1800 1820 1840 1860 1880 1900 −44 1920 −8 −10 −12 −14 −16 −18 IRL, INPUT RETURN LOSS (dB) 16.4 ηD, DRAIN EFFICIENCY (%) 28.2 IM3 (dBc), ACPR (dBc) 16.5 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts 39.6 VDD = 28 Vdc, Pout = 88 W (Avg.) IDQ = 2000 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 15.5 15.4 15.3 IRL 39.2 −24 IM3 −26 15.2 −28 15.1 ACPR −30 15 1760 1780 1800 1820 1840 1860 1880 1900 −32 1920 −8 −10 −12 −14 −16 −18 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 15.6 40 ηD ηD, DRAIN EFFICIENCY (%) 15.7 40.4 Gps IM3 (dBc), ACPR (dBc) 15.8 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 88 Watts 17.5 16.5 16 15.5 2300 mA 2000 mA 1700 mA 15 14.5 14 13.5 0.1 VDD = 28 Vdc, f1 = 1837.5 MHz f2 = 1847.5 MHz, Two−Tone Measurements, 10 MHz Tone Spacing 1400 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) 17 −30 IDQ = 2600 mA VDD = 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz Two−Tone Measurements, 10 MHz Tone Spacing −35 IDQ = 2600 mA −40 −45 2300 mA 1700 mA −50 2000 mA 1400 mA −55 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P18190HR6 RF Device Data Freescale Semiconductor 5 −10 60 59 58 VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 2000 mA Two−Tone Measurements, Center Frequency = 1842.5 MHz −30 Pout, OUTPUT POWER (dBm) −20 3rd Order −40 5th Order −50 7th Order Ideal 57 56 P3dB = 54.13 dBm (258.82 W) 55 54 53 P1dB = 53.51 dBm (224.38 W) Actual 52 51 50 VDD = 28 Vdc, IDQ = 2000 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 1842.5 MHz 49 48 −60 0.01 0.1 1 10 32 100 33 34 35 37 36 38 39 40 41 42 43 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 40 30 −30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −35 ACPR 20 Gps 10 TC = 25_C −40 85_C −45 −30_C ηD 25_C 0 −50 −30_C 25_C −10 85_C 1 44 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −55 100 150 10 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 60 Gps, POWER GAIN (dB) TC = −30_C 16 25_C 15 25_C 50 Gps 40 85_C −30_C 14 30 85_C 13 20 VDD = 28 Vdc IDQ = 2000 mA f = 1842.5 MHz ηD 12 11 1 10 100 10 0 500 17 16 15 Gps, POWER GAIN (dB) 70 ηD, DRAIN EFFICIENCY (%) 18 14 32 V 13 28 V 12 24 V 11 10 16 V 9 20 V VDD = 12 V IDQ = 2000 mA f = 1842.5 MHz 8 7 0 35 70 105 140 175 210 245 280 315 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 350 MRF6P18190HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature TYPICAL CHARACTERISTICS W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 W−CDMA. 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 −20 −30 −40 −50 −60 0.001 −70 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −80 −25 −20 −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6P18190HR6 RF Device Data Freescale Semiconductor 7 f = 1880 MHz Zo = 5 Ω f = 1880 MHz Zsource Zload f = 1800 MHz f = 1800 MHz VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg. f MHz Zsource Ω Zload Ω 1800 3.70 + j1.71 3.70 + j2.49 1840 3.40 + j2.75 3.55 + j3.29 1880 3.19 + j3.88 3.45 + j4.12 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 15. Series Equivalent Source and Load Impedance MRF6P18190HR6 8 RF Device Data Freescale Semiconductor NOTES MRF6P18190HR6 RF Device Data Freescale Semiconductor 9 NOTES MRF6P18190HR6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X A bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A D aaa M T A M B M ccc ccc M T A M B M T A M B M R M (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D - 05 ISSUE D NI - 1230 MRF6P18190HR6 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6P18190HR6 Document Number: MRF6P18190H Rev. 0, 4/2005 12 RF Device Data Freescale Semiconductor