Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15 dB Drain Efficiency — 21.5% ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19120HR3 MRF6S19120HSR3 1930 - 1990 MHz, 19 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S19120HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S19120HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 407 2.3 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 120 W CW Case Temperature 73°C, 19 W CW RθJC 0.43 0.45 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19120HR3 MRF6S19120HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) — 0.21 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.7 Adc) gfs — 6.9 — S Crss — 1.95 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps 14 15 17 dB ηD 20 21.5 — % ACPR — - 54 - 48 dBc IRL — - 13 -9 dB 1. Part is internally matched both on input and output. MRF6S19120HR3 MRF6S19120HSR3 2 RF Device Data Freescale Semiconductor VBIAS VSUPPLY B1 C4 + R1 C9 C5 R2 C7 Z1 Z2 Z3 C8 + + + + C10 C11 C12 C13 C14 C3 Z6 RF INPUT C6 + Z7 Z8 Z9 Z10 C2 Z5 Z4 RF OUTPUT C1 DUT Z1 Z2 Z3 Z4 Z5 Z6 1.242″ 0.839″ 0.230″ 0.320″ 0.093″ 0.160″ x 0.084″ x 0.084″ x 0.180″ x 1.100″ x 1.100″ x 1.098″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 PCB 0.387″ x 1.098″ Microstrip 0.169″ x 0.316″ Microstrip 0.781″ x 0.084″ Microstrip 1.228″ x 0.084″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair - Rite C1, C2 10 pF Chip Capacitors 100B100JP50X ATC C3, C4 5.1 pF Chip Capacitors 100B5R1CP50X ATC C5, C6 1.0 nF Chip Capacitors 100B102JP50X ATC C7, C8 0.1 μF Chip Capacitors C1825C100J5RAC Kemet C9 10 μF, 35 V Tantalum Chip Capacitor T491X106K035AS Kemet C10, C11 10 μF, 35 V Tantalum Chip Capacitors GRM55DR61H106KA88L Murata C12, C13 22 μF, 50 V Tantalum Chip Capacitors T491C105K022AS Kemet C14 470 μF, 63 V Electrolytic Capacitor, Radial MCR63V470M8X11 Multicomp R1 560 KW, 1/4 W Chip Resistor (1206) CRCW1206560F100 Vishay R2 10 W, 1/4 W Chip Resistor (1206) CRCW1206010F100 Vishay MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 3 C4 C9 B1 R2 C6 C8 C3 R1 C13 C11 C10 C5 C7 C12 C1 C14 CUT OUT AREA C2 MRF6S19120 Rev. 0 Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout MRF6S19120HR3 MRF6S19120HSR3 4 RF Device Data Freescale Semiconductor 15.4 24 15.2 ηD 15 22 Gps 14.8 IRL 14.6 20 VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −45 −50 ACPR −55 14.4 14.2 ALT1 −60 −65 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 −10 −12 −14 −16 −18 −20 −22 −24 −26 IRL, INPUT RETURN LOSS (dB) 26 ηD, DRAIN EFFICIENCY (%) 15.6 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 30 ηD 28 15.2 15 14.8 26 Gps VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL 14.6 14.4 14.2 −35 −40 ACPR −45 −50 ALT1 −55 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 f, FREQUENCY (MHz) −10 −12 −14 −16 −18 −20 −22 −24 −26 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 15.4 ACPR (dBc), ALT1 (dBc) 32 15.6 ηD, DRAIN EFFICIENCY (%) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 19 Watts Avg. Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 32 Watts Avg. 17 IDQ = 1500 mA Gps, POWER GAIN (dB) 16 1250 mA 15 1000 mA 750 mA 14 13 500 mA VDD = 28 Vdc f1 = 1988.75 MHz, f2 = 1991.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 12 0.6 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 VDD = 28 Vdc −25 f1 = 1988.75 MHz, f2 = 1991.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −30 IDQ = 500 mA −35 1500 mA 750 mA −40 −45 1250 mA −50 1000 mA −55 0.6 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 5 0 −10 Pout, OUTPUT POWER (dBm) VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1990 MHz −20 3rd Order −30 5th Order −40 −50 7th Order −60 0.1 1 10 100 63 62 61 Ideal 60 59 P3dB = 52.64 dBm (183.69 W) 58 57 56 55 P1dB = 51.9 dBm (154.32 W) Actual 54 53 52 51 VDD = 28 Vdc, IDQ = 1000 mA 50 Pulsed CW, 12 μsec(on), 1% Duty Cycle 49 48 f = 1990 MHz 47 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 50 40 30 20 −20 ηD VDD = 28 Vdc, IDQ = 1000 mA f = 1990 MHz, Single−Carrier N−CDMA 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 25_C 85_C −30_C Gps TC = 25_C 25_C ACPR −30 −40 ALT1 −50 10 −60 25_C 85_C 0 ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −70 −30_C −10 1 −80 100 150 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 18 16 70 −30_C 16 Gps 25_C 15 50 85_C 40 85_C 14 30 13 20 10 0 11 1 10 VDD = 32 V 14 13 12 28 V 11 24 V 10 20 V 9 8 VDD = 28 Vdc IDQ = 1000 mA f = 1990 MHz ηD 12 15 Gps, POWER GAIN (dB) 25_C 60 TC = −30_C ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 100 16 V IDQ = 1000 mA f = 1990 MHz 7 12 V 6 0 50 100 150 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 200 MRF6S19120HR3 MRF6S19120HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW ........................................... ................... . . . .. ... .. .. . . −ALT1 in 12.5 kHz .. .. +ALT1 in 12.5 kHz . Integrated BW Integrated BW .. .. . .. ... .. .. ........................ ......... ........... .... ........... . . ............. .. ........ . ........ . . . . . . ..... . ............ . . .. . .. ........ ............... ........ ...... .... .. . ............... . . . . . . .......... . ........... . . .. . . . . .. . . . . . .. −ACPR in 30 kHz +ACPR in 30 kHz ...................... ...... ...... ............ . . . . ........ ... .......... . . . Integrated BW Integrated BW ............... .. ................. ...... ..... ....... .......... ... −100 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Zo = 10 Ω Zload f = 1930 MHz f = 2020 MHz Zsource f = 1930 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 1930 3.03 - j5.14 1.52 - j1.77 1960 2.94 - j4.54 1.51 - j1.37 1990 2.75 - j4.34 1.38 - j1.20 2020 2.75 - j4.18 1.41 - j1.11 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19120HR3 MRF6S19120HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19120HR3 MRF6S19120HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M ccc B S (LID) H (LID) M T A M B M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF6S19120HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF6S19120HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19120HR3 MRF6S19120HSR3 Document Number: MRF6S19120H Rev. 1, 5/2006 12 RF Device Data Freescale Semiconductor