Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.7 dB Drain Efficiency — 32% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 68% • Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S9045NR1 MRF6S9045NBR1 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CW RθJC Unit °C/W 1.0 1.1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) 2 2.9 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) — 0.22 0.3 Vdc gfs — 4 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 77 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.78 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 21 22.7 25 dB Drain Efficiency ηD 30.5 32 — % ACPR — - 47 - 45 dBc IRL — - 20 - 20 -9 -7 Adjacent Channel Power Ratio Input Return Loss MRF6S9045NR1 MRF6S9045NBR1 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9045NR1 MRF6S9045NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 68 — % Input Return Loss IRL — - 12 — dB P1dB — 52 — W Pout @ 1 dB Compression Point (f = 940 MHz) MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 3 B2 B1 R1 VBIAS + + C16 C17 C18 R3 + R2 C15 RF INPUT C10 L2 VSUPPLY + C7 L1 C8 Z10 Z11 Z12 Z13 Z14 Z15 C11 C12 C13 RF Z16 OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C14 C9 C1 DUT C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ 0.057″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ x 0.525″ C3 C4 C6 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.095″ x 0.065″ Microstrip 0.800″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip 0.325″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRF6S9045NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9045NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair Rite B2 Ferrite Bead 2743021447 Fair Rite C1, C7, C10, C14 47 pF Chip Capacitors 100B470JP500X ATC C2, C4, C12 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C3 15 pF Chip Capacitor 100B150JP500X ATC C5, C6 12 pF Chip Capacitors 100B120JP500X ATC C8, C9 13 pF Chip Capacitors 100B130JP500X ATC C11 7.5 pF Chip Capacitor 100B7R5JP500X ATC C13 0.6 - 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C15, C16, C17 10 μF, 35 V Tantalum Capacitors T491D106K035AS Kemet C18 220 μF, 50 V Electrolytic Capacitor 678D227M025CG3D Vishay L1, L2 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ Chip Resistor R2 560 kΩ Chip Resistor R3 12 Ω Chip Resistor MRF6S9045NR1 MRF6S9045NBR1 4 RF Device Data Freescale Semiconductor C15 R2 C18 R3 R1 VGG VDD B1 C16 C17 B2 C7 C10 L2 C5 L1 C1 C4 C3 C6 CUT OUT AREA C8 C2 C14 C9 C11 C13 C12 TO−270/272 Surface / Bolt down Figure 2. MRF6S9045NR1(NBR1) Test Circuit Component Layout MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 22.4 34 ηD 33 32 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 22.2 31 −45 22 21.8 −50 ACPR 21.6 −55 IRL 21.4 21.2 −60 −65 ALT1 21 850 −70 860 870 880 890 900 −5 −10 −15 −20 −25 −30 910 IRL, INPUT RETURN LOSS (dB) Gps 22.8 22.6 ACPR (dBc), ALT1 (dBc) 35 23 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) ηD 22.4 46 22.2 Gps, POWER GAIN (dB) 47 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 22 21.8 21.6 45 −40 ACPR 21.4 −45 IRL 21.2 21 −50 ALT1 20.8 850 −55 −60 860 870 880 890 −5 −35 900 910 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 48 Gps ACPR (dBc), ALT1 (dBc) 22.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg. 24 −10 Gps, POWER GAIN (dB) 23 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 520 mA 475 mA 350 mA 22 275 mA 21 175 mA 20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 19 0.5 −20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −30 IDQ = 175 mA −40 275 mA 350 mA −50 520 mA −60 475 mA −70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9045NR1 MRF6S9045NBR1 6 RF Device Data Freescale Semiconductor −10 0 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two−Tone Measurements −20 −30 −40 3rd Order −50 5th Order −60 −70 7th Order −80 1 10 100 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA f1 = 880 MHz, f2 = 880.1 MHz, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 3rd Order −30 −40 5th Order −50 7th Order −60 −70 0.05 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 100 54 Pout, OUTPUT POWER (dBm) 53 Ideal P3dB = 48.6 dBm (72.44 W) 52 51 50 P1dB = 48.2 dBm (66.07 W) 49 Actual 48 47 VDD = 28 Vdc, IDQ = 350 mA Pulsed CW, 8 μsec(on), 1 msec(off) Center Frequency = 880 MHz 46 45 44 23 24 25 26 27 28 30 29 31 32 33 Pin, INPUT POWER (dBm) 60 ηD VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 25_C ALT1 50 40 85_C −25 25_C −35 −30_C 25_C −45 85_C 30 −55 Gps TC = 25_C −30_C 20 −65 ACPR 10 −75 0 1 10 −85 50 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 24 TC = −30_C 70 25_C 60 22 85_C 25_C 21 50 85_C 20 40 19 30 18 20 ηD VDD = 28 Vdc IDQ = 350 mA f = 880 MHz 17 16 1 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 23 80 −30_C Gps 10 0 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Gps, POWER GAIN (dB) 23.5 23 22.5 22 21.5 21 20.5 20 19.5 32 V 19 VDD = 12 V 18.5 16 V 20 V 18 17.5 0 10 20 30 40 28 V 24 V 50 IDQ = 350 mA f = 880 MHz 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9045NR1 MRF6S9045NBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 910 MHz f = 850 MHz Zsource Zload f = 910 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 850 0.42 + j0.30 3.05 + j1.27 865 0.42 + j0.44 3.16 + j1.33 880 0.45 + j0.60 3.31 + j1.33 895 0.48 + j0.74 3.43 + j1.20 910 0.50 + j0.85 3.35 + j1.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9045NR1 MRF6S9045NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF6S9045NR1 MRF6S9045NBR1 12 RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 13 MRF6S9045NR1 MRF6S9045NBR1 14 RF Device Data Freescale Semiconductor 2X aaa M A E1 B r1 C A B GATE LEAD D1 2X ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ DRAIN LEAD b1 aaa M D C A 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y - Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272- 2 PLASTIC MRF6S9045NBR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .18 .28 1.60 1.73 .10 MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF6S9045NR1 MRF6S9045NBR1 Document Number: MRF6S9045N Rev. 3, 5/2006 16 RF Device Data Freescale Semiconductor