Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain — 21 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1090 MHz, 250 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFET CASE 465A - 06, STYLE 1 NI - 780S Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +100 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit RθJC 0.10 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6V10250HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 500 nAdc 100 — — Vdc Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 2 mA Gate Threshold Voltage (VDS = 10 Vdc, ID = 528 μAdc) VGS(th) 1 1.8 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 250 mAdc, Measured in Functional Test) VGS(Q) 2 2.4 3 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.32 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.8 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 340 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 280 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, Pulsed, 100 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 19 21 23 dB Drain Efficiency ηD 55 60 — % Input Return Loss IRL — - 12 -9 dB 1. Part internally matched both on input and output. MRF6V10250HSR3 2 RF Device Data Freescale Semiconductor C12 C7 R2 C15 VSUPPLY + + C13 C14 L1 VBIAS L2 C6 R1 RF INPUT Z1 Z2 Z3 Z6 Z4 Z7 Z8 C8 C2 Z1 Z2*, Z9* Z3*, Z8* Z4, Z7 C3 C4 0.40″ 1.29″ 0.22″ 0.22″ x 0.080″ x 0.080″ x 0.480″ x 0.625″ C5 Microstrip Microstrip Microstrip x 0.220″ Taper Z10 C10 Z5 C1 Z9 RF OUTPUT C9 C11 DUT Z5, Z6 Z10 PCB 0.625″ x 0.300″ Microstrip 0.430″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 1. MRF6V10250HSR3 Test Circuit Schematic Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 240 pF Chip Capacitor ATC100B241JT500XT ATC C2, C9, C11 1.8 pF Chip Capacitors ATC100B1R8CT500XT ATC C3 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC C4, C5 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C6, C10, C12 39 pF Chip Capacitors ATC100B390JT500XT ATC C7, C15 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C8 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C13, C14 470 μF, 63 V Electrolytic Capacitors EKME633ELL471MK25S Multicomp L1 5 nH, 2 Turn Inductor A02TKLC Coilcraft L2 7 nH, Hand Wound 2T, 18awg Freescale R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay R2 20 Ω, 1 W Chip Resistor CRCW251220R0FKEA Vishay MRF6V10250HSR3 RF Device Data Freescale Semiconductor 3 C7 R2 C6 C13 C14 C15 L1 C12 R1 C1 C10 C5 C2 C3 C4 C8 C9 CUT OUT AREA L2 C11 MRF6V10250H Rev. 3 Figure 2. MRF6V10250HSR3 Test Circuit Component Layout MRF6V10250HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 50 Coss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 10 TJ = 150°C TJ = 175°C TJ = 200°C TC = 25°C 0.1 1 0 10 20 30 40 50 1 Figure 3. Capacitance versus Drain - Source Voltage Figure 4. DC Safe Operating Area Gps 20 50 ηD 40 18 VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 16 50 Pout, OUTPUT POWER (dBm) 60 ηD, DRAIN EFFICIENCY (%) 22 56 P3dB = 54.94 dBm (311 W) 55 Actual 54 53 52 51 50 48 26 400 Ideal P1dB = 54.55 dBm (285 W) VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 49 30 100 300 58 70 57 Gps, POWER GAIN (dB) 100 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 24 28 30 32 34 36 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Output Power versus Input Power 23 38 22 IDQ = 1 A 22 21 750 mA 500 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 10 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 21 250 mA 20 19 VDD = 50 Vdc, f = 1090 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 18 100 19 45 V 40 V 17 35 V 16 VDD = 30 V 400 50 V 18 15 17 50 20 14 50 IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 μsec Duty Cycle = 10% 100 400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power MRF6V10250HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 24 70 25_C 300 85_C 200 VDD = 50 Vdc IDQ = 250 mA f = 1090 MHz Pulse Width = 100 μsec Duty Cycle = 10% 100 0 1 2 3 4 5 6 60 25_C 20 50 85_C 55_C ηD 40 18 VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 18 50 0 Gps TC = −30_C 22 ηD, DRAIN EFFICIENCY (%) TC = −30_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) PULSED 400 30 400 100 Pin, INPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 9. Pulsed Power Output versus Power Input Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 107 MTTF (HOURS) 106 105 104 103 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 250 W Peak, Pulse Width = 100 μsec, Duty Cycle = 10%, and ηD = 60%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF6V10250HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω Zload f = 1090 MHz f = 978 MHz f = 978 MHz Zsource f = 1090 MHz VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak f MHz Zsource W Zload W 978 1.67 - j2.04 4.3 - j2.72 1030 2.39 - j2.23 5.66 - j2.42 1090 3.26 - j3.72 5.85 - j2.39 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6V10250HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF6V10250HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2008 Description • Initial Release of Data Sheet MRF6V10250HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF6V10250HSR3 Document Number: MRF6V10250HS Rev. 0, 2/2008 10 RF Device Data Freescale Semiconductor