FREESCALE MRF6V4300NBR1

Freescale Semiconductor
Technical Data
Document Number: MRF6V4300N
Rev. 0, 7/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6V4300NR1
MRF6V4300NBR1
Designed primarily for CW large - signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
10 - 600 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V4300NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE - ENDED
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +110
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
1
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol
Value (1)
Unit
RθJC
0.24
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
2.5
mA
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
VGS(th)
0.9
1.65
2.4
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.25
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.8
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
105
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
304
—
pF
Off Characteristics
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage
(ID = 150 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW
Power Gain
Gps
20
22
24
dB
Drain Efficiency
ηD
58
60
—
%
Input Return Loss
IRL
—
- 16
-9
dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
2
RF Device Data
Freescale Semiconductor
B3
VSUPPLY
B1
L2
C9
VBIAS
C5
C2
+
C1
C7
C4
C8
R1
C13
L4
C12
RF
INPUT
Z1
Z2
Z3
L1
Z4
Z5
Z7
Z8
Z9
C20 Z10
C21
C22 Z11
C25
C26 Z12
C19
C23
C24
C27
C28
Z13
RF
OUTPUT
C15
Z6
C11
C16
C17
DUT
C18
L5
C14
L3
C10
C6
B2
C3
VSUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.900″ x 0.082″ Microstrip
0.115″ x 0.170″ Microstrip
0.260″ x 0.170″ Microstrip
0.380″ x 0.170″ Microstrip
0.220″ x 0.220″ Microstrip
0.290″ x 0.630″ Microstrip
0.220″ x 0.630″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.380″ x 0.220″ Microstrip
0.040″ x 0.170″ Microstrip
0.315″ x 0.170″ Microstrip
0.230″ x 0.170″ Microstrip
0.390″ x 0.170″ Microstrip
0.680″ x 0.082″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fair - Rite
B2, B3
Long Ferrite Beads
2743021447
Fair - Rite
C1
47 μF, 25 V, Tantalum Capacitor
T491B476M025AT
Kemet
C2, C3
22 μF, 50 V, Chip Capacitors
C5750JF1H226ZT
TDK
C4, C5, C6, C7
1 μF, 100 V, Chip Capacitors
C3225JB2A105KT
TDK
C8, C9, C10
15 nF, 100 V, Chip Capacitors
C3225CH2A153JT
TDK
C11, C12, C13, C14, C15
240 pF, Chip Capacitors
ATC100B241JT500XT
ATC
C16
9.1 pF, Chip Capacitor
ATC100B9R1JT500XT
ATC
C17
15 pF, Chip Capacitor
ATC100B150JT500XT
ATC
C18
51 pF, Chip Capacitor
ATC100B510JT500XT
ATC
C19, C20
5.6 pF, Chip Capacitors
ATC100B5R6JT500XT
ATC
C21, C22, C23, C24
4.3 pF, Chip Capacitors
ATC100B4R3JT500XT
ATC
C25, C26, C27, C28
4.7 pF, Chip Capacitors
ATC100B4R7JT500XT
ATC
L1
27 nH Inductor
1812SMS - 27NJLC
Coilcraft
L2, L3
47 nH Inductors
1812SMS - 47NJLC
Coilcraft
L4, L5
5 Turns, #18 AWG Inductors, Hand Wound
Copper Wire
R1
10 Ω, 1/4 W, Chip Resistor
CRCW120610R1FKEA
Vishay
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
3
C1
B1
C7
B3
C4
C8
C2
C9 C5
L2
R1
ATC
C12
L1
C11
C17
C18
CUT OUT AREA
C16
L4
C13
C20
C21 C22 C25 C26
C19
C23 C24 C27 C28
C15
L5
C14
L3
MRF6V4300N/NB
Rev. 1
C10 C6
B2
C3
Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout
MRF6V4300NR1 MRF6V4300NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
100
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
Ciss
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
10
TC = 25°C
1
1
0
10
20
40
30
50
1
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
Figure 5. DC Safe Operating Area
10
23
VGS = 3 V
22
8
Gps, POWER GAIN (dB)
ID, DRAIN CURRENT (AMPS)
9
7
6
2.75 V
5
2.63 V
4
2.5 V
3
2
IDQ = 1350 mA
21
900 mA
1125 mA
20
450 mA
650 mA
19
1
VDD = 50 Vdc
f = 450 MHz
2.25 V
18
10
0
0
20
40
60
80
100
120
100
600
DRAIN VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS) CW
Figure 6. DC Drain Current versus Drain Voltage
Figure 7. CW Power Gain versus Output Power
0
−5
60
VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−10
−15
−20
−25
−30
IDQ = 450 mA
−35
650 mA
−40
900 mA
−45
−50
−55
1350 mA
58
P1dB = 55.15 dBm (327 W)
57
56
Actual
55
54
53
52
VDD = 50 Vdc, IDQ = 900 mA
f = 450 MHz
51
1125 mA
−60
10
100
600
Ideal
P3dB = 56.06 dBm (403 W)
59
Pout, OUTPUT POWER (dBm)
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
100
10
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
28
29
30
31
32
33
34
35
36
37
38
Pout, OUTPUT POWER (WATTS) PEP
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
23
60
21
20
19
18
25 V
17
30 V
35 V
IDQ = 900 mA
f = 450 MHz
VDD = 20 V
0
50
100
150
200
250
300
350
25_C
55
85_C
50
45
VDD = 50 Vdc
IDQ = 900 mA
f = 450 MHz
40
35
15
400
TC = −30_C
20
25
30
35
Pout, OUTPUT POWER (WATTS) CW
Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
Figure 11. Power Output versus Power Input
25
80
Gps, POWER GAIN (dB)
24
25_C
23
85_C
22
70
60
TC = −30_C
Gps
25_C
50
−30_C
21
40
85_C
30
20
19
18
10
40
ηD
VDD = 50 Vdc
IDQ = 900 mA
f = 450 MHz
100
ηD, DRAIN EFFICIENCY (%)
16
50 V
45 V
40 V
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
22
20
10
500
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
MRF6V4300NR1 MRF6V4300NBR1
6
RF Device Data
Freescale Semiconductor
Zsource
f = 450 MHz
Zo = 10 Ω
f = 450 MHz
Zload
VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW
f
MHz
Zsource
W
Zload
W
450
0.40 + j5.93
1.42 + j5.5
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6V4300NR1 MRF6V4300NBR1
8
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
9
MRF6V4300NR1 MRF6V4300NBR1
10
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
11
MRF6V4300NR1 MRF6V4300NBR1
12
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2008
Description
• Initial Release of Data Sheet
MRF6V4300NR1 MRF6V4300NBR1
14
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF6V4300NR1 MRF6V4300NBR1
Document
Number:
RF
Device
Data MRF6V4300N
Rev. 0, 7/2008
Freescale
Semiconductor
15