Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.1 dB Drain Efficiency — 33% ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 63% Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +66 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Maximum Operation Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 78°C, 14 W CW RθJC 0.77 0.88 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9060NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 2 3 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.27 0.4 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.1 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 33 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 109 — pF Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 20 21.1 23 dB Drain Efficiency ηD 30.5 33 — % ACPR — - 45.7 - 44 dBc IRL — - 18 -9 Adjacent Channel Power Ratio Input Return Loss dB (continued) MRFE6S9060NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 920 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 63 — % IRL — - 12 — dB P1dB — 67 — W Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 60 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) — 3 — ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) MHz Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg. GF — 0.27 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.011 — dB/°C ΔP1dB — 0.088 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MRFE6S9060NR1 RF Device Data Freescale Semiconductor 3 B2 B1 R4 R1 VBIAS + + C9 RF INPUT C15 R3 R2 C7 C8 Z2 Z3 Z4 Z5 L1 Z6 + + C16 C17 C19 C11 L2 Z10 Z1 + Z7 Z8 Z11 Z12 Z13 C10 C1 C12 C13 C18 RF Z15 OUTPUT Z14 C6 Z9 VSUPPLY C14 DUT C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ C3 x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ C4 C5 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.057″ x 0.525″ Microstrip 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.170″ x 0.065″ Microstrip 0.880″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRFE6S9060NR1 Test Circuit Schematic Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair Rite B2 Ferrite Bead 274021447 Fair Rite C1, C8, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C4, C13 0.8 - 8.0 pF Variable Capacitors, Gigatrim 2729152 Johanson C3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC C7, C16, C17 10 μF, 35 V Tantalum Capacitors T491D106K035AT Kemet C9 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RH Multicomp C10, C11 12 pF Chip Capacitors ATC100B120JT500XT ATC C12 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC C18 0.56 μF Chip Capacitor ATC700A561MT150XT ATC C19 470 μF, 63 V Electrolytic Capacitor EKME630ELL471MK255 Multicomp L1, L2 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay R4 27 W, 1/4 W Chip Resistor CRCW120627R0FKEA Vishay MRFE6S9060NR1 4 RF Device Data Freescale Semiconductor C7 VGG R2 R1 C19 B1 R3 C8 C15 C9 C2 C3 C5 R4 C18 L2 CUT OUT AREA C6 L1 C1 VDD C16 C17 B2 C11 C10 C12 C13 C14 C4 TO−270/272 Surface / Bolt down Figure 2. MRFE6S9060NR1 Test Circuit Component Layout MRFE6S9060NR1 RF Device Data Freescale Semiconductor 5 ηD 30 Gps 19 20 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 450 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 18 IRL 17 −30 −40 ACPR 16 15 −50 −60 ALT1 14 820 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 20 840 860 880 900 920 940 960 −70 980 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 40 21 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) ηD 50 Gps 18 40 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 450 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 17 IRL 16 −20 −30 ACPR 15 −40 14 −50 ALT1 13 820 840 860 880 900 920 940 960 −60 980 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 19 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 60 20 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 21 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 675 mA 550 mA Gps, POWER GAIN (dB) 20 450 mA 350 mA 19 225 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 16 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −30 IDQ = 225 mA −40 350 mA −50 675 mA 450 mA 550 mA −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9060NR1 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 450 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −30 −40 −50 3rd Order −60 5th Order −70 7th Order −80 1 100 10 200 0 VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 −30 IM3−U IM3−L −40 IM5−U IM5−L −50 IM7−U IM7−L −60 −70 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 80 58 Pout, OUTPUT POWER (dBm) Ideal P6dB = 51.31 dBm (135.21 W) 57 56 55 P3dB = 50.39 dBm (109.4 W) 54 53 P1dB = 49.41 dBm (87.3 W) 52 51 Actual 50 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 12 μsec(on) 1% Duty Cycle, f = 880 MHz 49 48 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) 65 60 55 50 45 40 35 30 25 20 15 10 5 0 VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 ACPR Gps ηD ALT1 1 10 −15 −20 −25 25_C −30 85_C −35 −30_C −40 25_C −45 −30_C 85_C −50 −55 −30_C −60 −65 85_C −70 25_C −75 −80 100 TC = −30_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRFE6S9060NR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS TC = −30_C Gps 25_C 70 60 20 85_C 19 25_C 50 85_C 18 40 17 30 16 20 VDD = 28 Vdc IDQ = 450 mA f = 880 MHz ηD 15 1 10 19 18 28 V 32 V VDD = 24 V 0 200 100 20 17 10 14 IDQ = 450 mA f = 880 MHz 21 Gps, POWER GAIN (dB) −30_C ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) 22 80 22 16 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 140 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRFE6S9060NR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW ... . ............... ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ........... ...... .......... ...... ... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRFE6S9060NR1 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 910 MHz f = 910 MHz Zload Zsource f = 850 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 0.48 + j0.18 2.15 + j0.61 910 0.52 + j0.29 2.00 + j0.68 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRFE6S9060NR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9060NR1 RF Device Data Freescale Semiconductor 11 MRFE6S9060NR1 12 RF Device Data Freescale Semiconductor MRFE6S9060NR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2007 • Initial Release of Data Sheet 1 Oct. 2007 • Added Min value to VDS(on), On Characteristics table, p. 2 MRFE6S9060NR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRFE6S9060NR1 Document Number: RF Device Data MRFE6S9060N Rev. 1, 10/2007 Freescale Semiconductor 15