FREESCALE MW4IC2230GNBR1

Freescale Semiconductor
Technical Data
Document Number: MW4IC2230N
Rev. 6, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1
VRG1
VDS2
VDS1
3 Stages IC
RFin
VDS3/RFout
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC2230NBR1
MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GNBR1
GND
VDS2
VRD1
VRG1
VDS1
1
2
3
4
5
16
15
RFin
6
14
VDS3/
RFout
VGS1
VGS2
VGS3
GND
7
8
9
10
11
13
12
GND
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +8
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Channel Temperature
TJ
200
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
Stage 1
Stage 2
Stage 3
°C/W
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
29
31.5
—
dB
Input Return Loss
IRL
—
- 25
- 10
dB
—
—
- 53.5
- 52
- 50
—
Adjacent Channel Power Ratio
ACPR
Pout = 0.4 W Avg.
Pout = 1.26 W Avg.
dBc
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA,
IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Psat
—
43
—
W
Quiescent Current Accuracy over Temperature ( - 10 to 85°C) (2)
ΔIQT
—
±5
—
%
Gain Flatness in 30 MHz Bandwidth
GF
—
0.13
—
dB
Deviation from Linear Phase in 30 MHz Bandwidth
Φ
—
±1
—
°
Delay
—
1.6
—
ns
ΔΦ
—
±15
—
°
Delay @ Pout = 0.4 W CW Including Output Matching
Part - to - Part Phase Variation
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2230NBR1 MW4IC2230GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc,
Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,
2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
—
31.5
—
dB
Intermodulation Distortion
IM3
—
- 52
—
dBc
ACPR
—
- 55
—
dBc
IRL
—
- 26
—
dB
Adjacent Channel Power Ratio
Input Return Loss
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
3
VD3
VD2
+
VD1
C2
1
2
3 NC
4 NC
5
C5
+
C1
C6
RF
INPUT
DUT
+
16
NC 15
C7
Z2
C3
C9
14 Z4
Z1
Z5
Z6
Z7
RF
OUTPUT
6
C10
VG1
R1
VG2
R2
VG3
R3
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation NC 13
C11
C12
Z3
12
+
C8
Z1
Z2, Z3
Z4
Z5
2.180″ x 0.090″ Microstrip
0.040″ x 0.430″ Microstrip
0.350″ x 0.240″ Microstrip
0.420″ x 0.090″ Microstrip
Z6
Z7
PCB
C4
1.120″ x 0.090″ Microstrip
0.340″ x 0.090″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic
Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
10 μF, 35 V Tantalum Capacitors
TAJD106K035
AVX
C5, C6, C7, C8, C12
8.2 pF 100B Chip Capacitors
100B8R2CW
ATC
C9, C10
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C11
0.3 pF 100B Chip Capacitor
100B0R3BW
ATC
R1, R2, R3
1.8 kW Chip Resistors (1206)
MW4IC2230NBR1 MW4IC2230GNBR1
4
RF Device Data
Freescale Semiconductor
C2
C3
VD2
MW4IC2230
Rev 1
VD1
VD3
C5
C7
C1
C6
C12
C9
C10
C11
C8
R1
VG1
R2
VG2
GND
R3
VG3
C4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
5
32
0
Gps
G ps , POWER GAIN (dB)
31
−10
30
−20
IRL
29
−30
VDD = 28 Vdc
Pout = 26 dBm (Avg.)
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
1−Carrier W−CDMA
28
−40
27
−50
ACPR
26
2050
−60
2100
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
2200
2150
f, FREQUENCY (MHz)
0
Gps
−10
−20
30
IRL
−30
29
28
VDD = 28 Vdc
Pout = 31 dBm (Avg.)
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
1−Carrier W−CDMA
−40
ACPR
27
26
2050
−50
−60
2100
2150
−40
−45
VDD = 28 Vdc
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
f = 2140 MHz, 1−Carrier W−CDMA
25_C
−50
−30_C
−55
−60
1
0.1
2200
f, FREQUENCY (MHz)
G ps , POWER GAIN (dB)
Figure 7. Adjacent Channel Power Ratio
versus Output Power
33
0
32
−10
Gps
31
IRL
30
VDD = 28 Vdc
Pout = 26 dBm (Avg.)
IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA
2−Carrier W−CDMA
28
27
2050
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single - Carrier W - CDMA Wideband
Performance @ Pout = 31 dBm
29
TC = 85_C
2150
−30
−40
IM3
ACPR
2100
−20
−50
−60
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
IM3, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
31
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
32
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 5. Single - Carrier W - CDMA Wideband
Performance @ Pout = 26 dBm
2200
f, FREQUENCY (MHz)
Figure 8. 2 - Carrier W - CDMA Wideband Performance
MW4IC2230NBR1 MW4IC2230GNBR1
6
RF Device Data
Freescale Semiconductor
2.00
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
P3dB = 46.3 dBm (43 W)
Ideal
P1dB = 45.3 dBm (34 W)
1.90
1.85
Actual
4
6
8
10
12
14
16
18
20
22
1.80
1.75
1.70
1.65
VDD = 28 Vdc
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
2
VDD = 28 Vdc, Small Signal
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
1.95
DELAY (ns)
Pout , OUTPUT POWER (dBm)
TYPICAL CHARACTERISTICS
1.60
1.55
1.50
1950
24
2000
2050
2100
2150
2200
2250
Pin, INPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 9. Output Power versus Input Power
Figure 10. Delay versus Frequency
2300
MTTF FACTOR (HOURS X AMPS 2 )
1.E+09
3rd Stage
1.E+08
2nd Stage
1.E+07
1st Stage
1.E+06
1.E+05
1.E+04
90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Temperature Junction
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
7
Zin*
Zload*
f = 2050 MHz
f = 2230 MHz
f = 2050 MHz
f = 2230 MHz
Zo = 50 Ω
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
2050
42.18 + j1.49
8.52 - j0.46
2110
41.06 - j1.30
8.58 - j0.20
2140
40.49 - j2.42
8.63 - j0.09
2170
40.05 - j3.45
8.69 - j0.01
2230
39.29 - j6.31
8.81 + j0.04
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Z
in
Z
load
Figure 12. Series Equivalent Input and Load Impedance
MW4IC2230NBR1 MW4IC2230GNBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MW4IC2230NBR1 MW4IC2230GNBR1
10
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
11
MW4IC2230NBR1 MW4IC2230GNBR1
12
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
13
MW4IC2230NBR1 MW4IC2230GNBR1
14
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
RF Device Data
Freescale Semiconductor
15
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MW4IC2230NBR1 MW4IC2230GNBR1
Document Number: MW4IC2230N
Rev. 6, 5/2006
16
RF Device Data
Freescale Semiconductor