FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Rating Unit Drain-Source Voltage VDS 3.5 V Gate-Source Voltage VGS -3.0 V Pt* 180 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Total Power Dissipation *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10µA VDS = 2V, IDS = 10mA, f = 12GHz Channel to Case Note: RF parameters are measured on a sample basis as follows: Lot qty. Sample qty. Accept/Reject 1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 1 Min. 15 35 -0.2 -3.0 9.5 9.5 9.5 - Limit Typ. Max. 30 60 45 -0.7 0.75 10.5 0.9 10.5 1.1 10.5 300 -1.5 0.85 1.1 1.35 400 Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 150 LG 100 50 0 0 50 100 150 VGS =0V 30 -0.2V 20 -0.4V 10 0 200 1 Ambient Temperature (°C) 4 Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12 Gas 2 10 1 5 Noise Figure (dB) 15 3 Associated Gain (dB) VDS=2V IDS=10mA Noise Figure (dB) 2 -0.6V -0.8V 3 f=12GHz VDS=2V 11 Gas 2 10 9 8 1 NF 7 NF 0 4 8 10 12 0 20 0 0 10 20 30 Frequency (GHz) Drain Current (mA) NF & Gas vs. TEMPERATURE FHX04LG OUTPUT POWER vs. INPUT POWER 1.5 Noise Figure (dB) 6 f=12GHz VDS=2V IDS=10mA Gas 1.0 0.5 0 15 15 Output Power (dBm) 0 10 NF 5 f=12GHz VDS=2V 10 Noise Figure Matched IDS=10mA 5 0 -10 100 200 300 400 Ambient Temperature (°K) 2 Gain Matched IDS=15mA -5 0 5 Input Power (dBm) Associated Gain (dB) Total Power Dissipation (mW) 200 FHX04LG, 05LG, 06LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 FHX04LG +j100 +j25 Γopt +j10 +j250 1.0dB 0 10 1.5 25 2.0 2.5 3.0 50 f=12GHz VDS=2V IDS=10mA 100 -j10 -j250 -j25 -j100 -j50 Ga(max) AND |S21| vs. FREQUENCY FHX04LG VDS=2V IDS=10mA Ga(max) Gain (dB) 12 8 |S21| 4 0 2 4 6 810 20 Frequency (GHz) NOISE PARAMETERS FHX04LG VDS=2V, IDS=10MA Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 Γopt (MAG) (ANG) 0.99 0.97 0.93 0.87 0.80 0.72 0.63 0.53 0.42 29.0 53.0 77.0 101.0 127.0 152.0 178.0 -156.0 -129.0 3 NFmin (dB) Rn/50 0.33 0.35 0.45 0.55 0.66 0.75 0.88 1.05 1.30 0.43 0.30 0.20 0.12 0.07 0.04 0.03 0.05 0.09 Γopt=0.72∠152° Rn/50=0.04 NFmin=0.75dB FHX04LG, 05LG, 06LG Super Low Noise HEMT S11 S22 +j50 S21 S12 +90° +j100 +j25 4 6 2 18 GHz 18 GHz 16 0 12 16 1 GHz 14 25 50Ω 100 4 3 2 2 1 4 0.04 18 GHz -j250 0.08 2 8 0.12 6 -j25 4 -j100 12 0° 12 14 16 1 GHz 6 10 6 1 GHz 2 8 4 8 10 SCALE FOR |S21| 1 GHz 10 10 180° 250 14 12 -j10 8 +j250 0.16 SCALE FOR |S12| +j10 16 18 GHz -90° -j50 S-PARAMETERS FHX04LG VDS = 2V, IDS = 10mA FREQUENCY (GHZ) S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG 1.0 0.990 -19.3 4.232 162.1 0.016 2.0 0.965 -37.5 4.115 144.1 0.030 64.8 0.563 -28.1 3.0 0.928 -55.2 3.923 127.4 0.042 53.3 0.546 -41.2 4.0 0.886 -72.1 3.737 110.9 0.052 41.9 0.525 -54.4 5.0 0.844 -88.3 3.518 95.6 0.059 32.2 0.505 -67.6 6.0 0.804 -103.4 3.302 80.8 0.063 23.9 0.489 -80.7 7.0 0.771 -117.4 3.090 66.4 0.066 16.6 0.484 -93.0 8.0 0.741 -129.6 2.876 53.1 0.065 11.5 0.487 -104.5 9.0 0.717 -140.3 2.703 40.7 0.066 4.9 0.497 -115.1 75.1 MAG ANG 0.576 -14.3 10.0 0.695 -150.8 2.592 28.6 0.065 -0.3 0.503 -124.9 11.0 0.675 -161.2 2.476 16.4 0.064 -3.0 0.517 -135.7 12.0 0.650 -171.5 2.374 4.2 0.064 -6.4 0.534 -145.8 13.0 0.630 178.9 2.277 -7.8 0.063 -9.3 0.552 -156.1 14.0 0.607 170.2 2.176 -19.1 0.064 -12.5 0.585 -164.6 15.0 0.585 161.8 2.144 -30.7 0.065 -16.4 0.617 -171.7 16.0 0.557 151.8 2.151 -43.2 0.066 -22.2 0.642 177.8 17.0 0.522 140.9 2.142 -56.9 0.067 -29.4 0.673 169.5 18.0 0.480 128.4 2.136 -71.2 0.068 -39.2 0.694 159.7 Download S-Parameters, click here FHX04LG, 05LG, 06LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1.5±0.3 (0.059) 1 4.78±0.5 3 1.78±0.15 1.5±0.3 (0.07) (0.059) 2 4 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. Gate Source Drain Source 0.1 (0.004) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 5