FUJITSU SEMICONDUCTOR DATA SHEET DS04-27709-6E ASSP For Power Supply Applications (Secondary battery) DC/DC Converter IC for Charging Li-ion battery MB3887 ■ DESCRIPTION The MB3887 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and enabling output voltage to be set to any desired level from one cell to four cells. These ICs can dynamically control the secondary battery’s charge current by detecting a voltage drop in an AC adapter in order to keep its power constant (dynamically-controlled charging) . The charging method enables quick charging, for example, with the AC adapter during operation of a notebook PC. The MB3887 provides a broad power supply voltage range and low standby current as well as high efficiency, making it ideal for use as a built-in charging device in products such as notebook PC. This product is covered by US Patent Number 6,147,477. ■ FEATURES • Detecting a voltage drop in the AC adapter and dynamically controlling the charge current (Dynamically-controlled charging) • Output voltage setting using external resistor : 1 cell to 4 cells • High efficiency : 96% (VIN = 19 V, Vo = 16.8 V) • Wide range of operating supply voltages : 8 V to 25 V • Output voltage setting accuracy : 4.2 V ± 0.74% (Ta = −10 °C to +85 °C , per cell) • Charging current accuracy : ±5% • Built-in frequency setting capacitor enables frequency setting using external resistor only • Oscillation frequency range : 100 kHz to 500 kHz • Built-in current detection amplifier with wide in-phase input voltage range : 0 V to VCC • In standby mode, leave output voltage setting resistor open to prevent inefficient current loss • Built-in standby current function : 0 µA (standard) • Built-in soft-start function independent of loads • Built-in totem-pole output stage supporting P-channel MOS FET devices • One type of package (SSOP-24pin : 1 type) ■ Application • Notebook PC Copyright©2001-2006 FUJITSU LIMITED All rights reserved MB3887 ■ PIN ASSIGNMENT (TOP VIEW) 24 : +INC2 −INC2 : 1 23 : GND OUTC2 : 2 +INE2 : 3 22 : CS −INE2 : 4 21 : VCC (O) 20 : OUT FB2 : 5 19 : VH VREF : 6 18 : VCC FB1 : 7 −INE1 : 8 17 : RT +INE1 : 9 16 : −INE3 OUTC1 : 10 15 : FB3 OUTD : 11 14 : CTL −INC1 : 12 13 : +INC1 (FPT-24P-M03) 2 MB3887 ■ PIN DESCRIPTION Pin No. Symbol I/O Descriptions 1 −INC2 I Current detection amplifier (Current Amp2) input terminal. 2 OUTC2 O Current detection amplifier (Current Amp2) output terminal. 3 +INE2 I Error amplifier (Error Amp2) non-inverted input terminal. 4 −INE2 I Error amplifier (Error Amp2) inverted input terminal. 5 FB2 O Error amplifier (Error Amp2) output terminal. 6 VREF O Reference voltage output terminal. 7 FB1 O Error amplifier (Error Amp1) output terminal. 8 −INE1 I Error amplifier (Error Amp1) inverted input terminal 9 +INE1 I Error amplifier (Error Amp1) non-inverted input terminal. 10 OUTC1 O Current detection amplifier (Current Amp1) output terminal. 11 OUTD O With IC in standby mode, this terminal is set to “Hi-Z” to prevent loss of current through output voltage setting resistance. Set CTL terminal to “H” level to output “L” level. 12 −INC1 I Current detection amplifier (Current Amp1) input terminal. 13 +INC1 I Current detection amplifier (Current Amp1) input terminal. 14 CTL I Power supply control terminal. Setting the CTL terminal at “L” level places the IC in the standby mode. 15 FB3 O Error amplifier (Error Amp3) output terminal. 16 −INE3 I Error amplifier (Error Amp3) inverted input terminal. 17 RT ⎯ Triangular-wave oscillation frequency setting resistor connection terminal. 18 VCC ⎯ Power supply terminal for reference power supply and control circuit. 19 VH O Power supply terminal for FET drive circuit (VH = VCC − 6 V) . 20 OUT O External FET gate drive terminal. 21 VCC (O) ⎯ Output circuit power supply terminal. 22 CS ⎯ Soft-start capacitor connection terminal. 23 GND ⎯ Ground terminal. 24 +INC2 I Current detection amplifier (Current Amp2) input terminal. 3 MB3887 ■ BLOCK DIAGRAM −INE1 8 OUTC1 10 <Current Amp1> + × 20 − −INC1 12 +INC1 13 <Error Amp1> VREF − + 21 VCC (O) +INE1 9 <PWM Comp.> <OUT> + + + Drive − FB1 7 −INE2 4 OUTC2 2 <Current Amp2> + +INC2 24 × 20 − −INC2 1 +INE2 3 <Error Amp2> VREF VCC − − 35 kΩ 0.91 V (0.77 V) VREF UVLO <SOFT> VREF 10 µA VCC 4.2 V CS 22 <OSC> bias 17 RT 18 VCC <REF> 45 pF 4 VCC (VCC UVLO) 215 kΩ + − + + 4.2 V FB3 15 (VCC − 6 V) 2.5 V 1.5 V <UVLO> <Error Amp3> VREF OUTD 11 19 VH Bias Voltage <VH> + FB2 5 −INE3 16 20 OUT <CTL> VREF 5.0 V 6 VREF 23 GND 14 CTL MB3887 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Power supply voltage VCC Output current IOUT Peak output current IOUT Power dissipation PD Storage temperature TSTG Rating Unit Min Max VCC, VCC (O) terminal*2 ⎯ 28 V ⎯ ⎯ 60 mA Duty ≤ 5 % (t = 1 / fOSC × Duty) ⎯ 700 mA Ta ≤ +25 °C ⎯ 740*1 mW −55 +125 °C ⎯ *1 : The package is mounted on the dual-sided epoxy board (10 cm × 10 cm) . *2 : For details, refer to “■ THE SEQUENCE OF THE START-UP AND OFF OF THE POWER SUPPLY”. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. 5 MB3887 ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Conditions VCC, VCC (O) terminal* Value Unit Min Typ Max 8 ⎯ 25 V Power supply voltage VCC Reference voltage output current IREF ⎯ −1 ⎯ 0 mA VH terminal output current IVH ⎯ 0 ⎯ 30 mA VINE −INE1 to −INE3, +INE1, +INE2 terminal 0 ⎯ VCC − 1.8 V VINC +INC1, +INC2, −INC1, −INC2 terminal 0 ⎯ VCC V Input voltage OUTD terminal output voltage VOUTD ⎯ 0 ⎯ 17 V OUTD terminal output current IOUTD ⎯ 0 ⎯ 2 mA CTL terminal input voltage VCTL ⎯ 0 ⎯ 25 V Output current IOUT ⎯ −45 ⎯ +45 mA Peak output current IOUT −600 ⎯ +600 mA Oscillation frequency fOSC ⎯ 100 290 500 kHz Timing resistor RT ⎯ 27 47 130 kΩ Soft-start capacitor CS ⎯ ⎯ 0.022 1.0 µF VH terminal capacitor CVH ⎯ ⎯ 0.1 1.0 µF Reference voltage output capacitor CREF ⎯ ⎯ 0.1 1.0 µF Ta ⎯ −30 +25 +85 °C Operating ambient temperature Duty ≤ 5 % (t = 1 / fosc × Duty) * : For details, refer to “■ THE SEQUENCE OF THE START-UP AND OFF OF THE POWER SUPPLY”. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 6 MB3887 ■ ELECTRICAL CHARACTERISTICS (Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) Symbol Pin No. VREF1 6 VREF2 Input stability Load stability Parameter Output voltage 1. Reference voltage block [REF] Short-circuit output current Threshold voltage 2. Under voltage lockout protecHysteresis width tion circuit block Threshold voltage [UVLO] Hysteresis width 3. Soft-start block Charge current [SOFT] 4. Triangular waveform oscillator circuit block [OSC] Oscillation frequency Frequency temperature stability Input offset voltage Input bias current In-phase input voltage range 5-1. Error amplifier Voltage gain block Frequency [Error Amp1, bandwidth Error Amp2] Output voltage Output source current Output sink current Conditions Value Unit Min Typ Max Ta = +25 °C 4.967 5.000 5.041 V 6 Ta = −10 °C to +85 °C 4.95 5.00 5.05 V Line 6 VCC = 8 V to 25 V ⎯ 3 10 mV Load 6 VREF = 0 mA to −1 mA ⎯ 1 10 mV Ios 6 VREF = 1 V −50 −25 −12 mA VTLH 18 VCC = VCC (O) , VCC = 6.2 6.4 6.6 V VTHL 18 VCC = VCC (O) , VCC = 5.2 5.4 5.6 V VH 18 VCC = VCC (O) ⎯ 1.0* ⎯ V VTLH 6 VREF = 2.6 2.8 3.0 V VTHL 6 VREF = 2.4 2.6 2.8 V VH 6 ⎯ ⎯ 0.2 ⎯ V ICS 22 ⎯ −14 −10 −6 µA fOSC 20 RT = 47 kΩ 260 290 320 kHz ∆f/fdt 20 Ta = −30 °C to +85 °C ⎯ 1* ⎯ % ⎯ 1 5 mV VIO 3, 4, FB1 = FB2 = 2 V 8, 9 IB 3, 4, 8, 9 ⎯ −100 −30 ⎯ nA VCM 3, 4, 8, 9 ⎯ 0 ⎯ VCC − 1.8 V AV 5, 7 DC ⎯ 100* ⎯ dB BW 5, 7 AV = 0 dB ⎯ 2* ⎯ MHz VFBH 5, 7 ⎯ 4.7 4.9 ⎯ V VFBL 5, 7 ⎯ ⎯ 20 200 mV ⎯ −2 −1 mA 150 300 ⎯ µA ISOURCE 5, 7 FB1 = FB2 = 2 V ISINK 5, 7 FB1 = FB2 = 2 V * : Standard design value. (Continued) 7 MB3887 (Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) Symbol Pin No. Conditions VTH1 16 VTH2 Input current Parameter Unit Min Typ Max FB3 = 2 V, Ta = +25 °C 4.183 4.200 4.225 V 16 FB3 = 2 V, Ta = −10 °C to +85 °C 4.169 4.200 4.231 V IINE3 16 −INE3 = 0 V −100 −30 ⎯ nA Voltage gain AV 15 DC ⎯ 100* ⎯ dB Frequency bandwidth BW 15 AV = 0 dB ⎯ 2* ⎯ MHz VFBH 15 ⎯ 4.7 4.9 ⎯ V VFBL 15 ⎯ ⎯ 20 200 mV ISOURCE 15 FB3 = 2 V ⎯ −2 −1 mA Output sink current ISINK 15 FB3 = 2 V 150 300 ⎯ µA OUTD terminal output leak current ILEAK 11 OUTD = 17 V ⎯ 0 1 µA OUTD terminal output ON resistor RON 11 OUTD = 1 mA ⎯ 35 50 Ω VIO 1, 12, 13, 24 +INC1 = +INC2 = −INC1 = −INC2 = 3 V to VCC −3 ⎯ +3 mV I+INCH 13, 24 +INC1 = +INC2 = 3 V to VCC, ∆VIN = −100 mV ⎯ 20 30 µA +INC1 = +INC2 = 1, 12 3 V to VCC, ∆Vin = −100 mV ⎯ 0.1 0.2 µA Threshold voltage 5-2. Error amplifier block [Error Amp3] Value Output voltage Output source current Input offset voltage 6. Current detection amplifier block [Current Amp1, Current Amp2] Input current I−INCH I+INCL 13, 24 +INC1 = +INC2 = 0 V, ∆Vin = −100 mV −180 −120 ⎯ µA I−INCL 1, 12 +INC1 = +INC2 = 0 V, ∆Vin = −100 mV −195 −130 ⎯ µA * : Standard design value (Continued) 8 MB3887 (Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) Parameter Current detection voltage 6. Current detection In-phase input amplifier block voltage range [Current Amp1, Current Amp2] Pin No. Conditions Value Unit Min Typ Max +INC1 = +INC2 = VOUTC1 2, 10 3 V to VCC, ∆Vin = −100 mV 1.9 2.0 2.1 V +INC1 = +INC2 = VOUTC2 2, 10 3 V to VCC, ∆Vin = −20 mV 0.34 0.40 0.46 V +INC1 = +INC2 = VOUTC3 2, 10 0 V to 3 V, ∆Vin = −100 mV 1.8 2.0 2.2 V +INC1 = +INC2 = VOUTC4 2, 10 0 V to 3 V, ∆Vin = −20 mV 0.2 0.4 0.6 V 0 ⎯ VCC V VCM 1, 12, 13, 24 ⎯ Voltage gain AV +INC1 = +INC2 = 2, 10 3 V to VCC, ∆Vin = −100 mV 19 20 21 V/V Frequency bandwidth BW 2, 10 AV = 0 dB ⎯ 2* ⎯ MHz Output voltage Output source current Output sink current 7. PWM comparator block [PWM Comp.] Symbol VOUTCH 2, 10 ⎯ 4.7 4.9 ⎯ V VOUTCL 2, 10 ⎯ ⎯ 20 200 mV ⎯ −2 −1 mA ISOURCE 2, 10 OUTC1 = OUTC2 = 2 V ISINK 2, 10 OUTC1 = OUTC2 = 2 V 150 300 ⎯ µA VTL 5, 7, Duty cycle = 0 % 15 1.4 1.5 ⎯ V VTH 5, 7, Duty cycle = 100 % 15 ⎯ 2.5 2.6 V Threshold voltage * : Standard design value (Continued) 9 MB3887 (Continued) (Ta = +25 °C, VCC = 19 V, VCC (O) = 19 V, VREF = 0 mA) Symbol Pin No. Conditions ISOURCE 20 ISINK Output ON resistor Parameter Typ Max OUT = 13 V, Duty ≤ 5 % (t = 1 / fOSC × Duty) ⎯ −400* ⎯ mA 20 OUT = 19 V, Duty ≤ 5 % (t = 1 / fOSC × Duty) ⎯ 400* ⎯ mA ROH 20 OUT = −45 mA ⎯ 6.5 9.8 Ω ROL 20 OUT = 45 mA ⎯ 5.0 7.5 Ω Rise time tr1 20 OUT = 3300 pF (Si4435 × 1) ⎯ 50* ⎯ ns Fall time tf1 20 OUT = 3300 pF (Si4435 × 1) ⎯ 50* ⎯ ns VON 14 IC Active mode 2 ⎯ 25 V VOFF 14 IC Standby mode 0 ⎯ 0.8 V ICTLH 14 CTL = 5 V ⎯ 100 150 µA ICTLL 14 CTL = 0 V ⎯ 0 1 µA Output voltage VH 19 VCC = VCC (O) = 8 V to 25 V, VH = 0 to 30 mA Standby current ICCS 18 VCC = VCC (O) , CTL = 0 V ⎯ 0 10 µA Power supply current ICC 18 VCC = VCC (O) , CTL = 5 V ⎯ 8 12 mA Output sink current 9. Power supply control block [CTL] 10. Bias voltage block [VH] 11. General CTL input voltage Input current * : Standard design value 10 Unit Min Output source current 8. Output block [OUT] Value VCC − 6.5 VCC − 6.0 VCC − 5.5 V MB3887 ■ TYPICAL CHARACTERISTICS Reference voltage vs. Power supply voltage 6 6 Ta = +25 °C CTL = 5 V 5 Reference voltage VREF (V) Power supply current ICC (mA) Power supply current vs. Power supply voltage 4 3 2 1 0 0 5 10 15 20 5 4 3 2 0 25 Ta = +25 °C CTL = 5 V VREF = 0 mA 1 0 Power supply voltage VCC (V) 3 2 1 10 15 20 25 25 30 Reference voltage output current IREF (mA) VCC = 19 V CTL = 5 V 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 −40 0 5 20 Reference voltage vs. Ambient temperature Reference voltage VREF (V) Reference voltage VREF (V) 4 0 15 5.08 Ta = +25 °C VCC = 19 V CTL = 5 V 5 10 Power supply voltage VCC (V) Reference voltage vs. Reference voltage output current 6 5 −20 0 +20 +40 +60 +80 +100 Ambient temperature Ta ( °C) 1000 10 Ta = +25 °C VCC = 19 V 900 800 9 8 7 700 600 6 VREF 5 500 ICTL 400 4 300 3 200 2 100 1 Reference voltage VREF (V) CTL terminal current ICTL (µA) CTL terminal current, Reference voltage vs. CTL terminal voltage 0 0 0 5 10 15 20 25 CTL terminal voltage VCTL (V) (Continued) 11 MB3887 Triangular wave oscillation frequency vs. Timing resistor Ta = +25 °C VCC = 19 V CTL = 5 V 100 k 340 Triangular wave oscillation frequency fOSC (kHz) Triangular wave oscillation frequency fOSC (Hz) 1M Triangular wave oscillation frequency vs. Power supply voltage 10 k Ta = +25 °C CTL = 5 V RT = 47 kΩ 330 320 310 300 290 280 270 260 10 100 0 1000 Timing resistor RT (kΩ) 0 +20 +40 +60 20 25 +80 Ambient temperature Ta ( °C) Error amplifier threshold voltage vs. Ambient temperature VCC = 19 V CTL = 5 V 2.24 Error amplifier threshold voltage VTH (V) Triangular wave oscillation frequency fOSC (kHz) 15 4.25 VCC = 19 V CTL = 5 V RT = 47 kΩ −20 10 Power supply voltage VCC (V) Triangular wave oscillation frequency vs. Ambient temperature 320 315 310 305 300 295 290 285 280 275 270 265 260 −40 5 +100 4.23 2.22 4.21 4.20 4.19 4.18 4.17 4.16 4.15 −40 −20 0 +20 +40 +60 +80 +100 Ambient temperature Ta ( °C) (Continued) 12 MB3887 Error amplifier gain and phase vs. Frequency Ta = +25 °C 40 VCC = 19 V 180 AV φ 90 0 Phase φ (deg) 20 Gain AV (dB) 4.2 V 0 −20 −90 −40 −180 10 kΩ 1 µF + 10 k 100 k 1M 8 (4) 2.4 kΩ IN − 7 (5) + 9 (3) 10 kΩ 1k 240 kΩ 10 kΩ OUT Error Amp1 (Error Amp2) 10 kΩ 10 M Frequency f (Hz) Error amplifier gain and phase vs. Frequency Ta = +25 °C 40 4.2 V 180 VCC = 19 V 20 90 0 0 −90 −20 240 kΩ 10 kΩ 10 kΩ Phase φ (deg) Gain AV (dB) AV φ 1 µF + 2.4 kΩ IN 16 − 22 + 15 + 10 kΩ 10 kΩ OUT Error Amp3 4.2 V −180 −40 1k 10 k 100 k 1M 10 M Frequency f (Hz) Current detection amplifier gain and phase vs. Frequency Ta = +25 °C 20 VCC = 19 V 180 AV 90 φ 0 0 Phase φ (deg) Gain AV (dB) 40 −20 −90 −40 −180 1k 10 k 100 k 1M 13 + (24) ×20 10 (2) 12 − (1) Current Amp1 (Current Amp2) 12.6 V OUT 12.55 V 10 M Frequency f (Hz) (Continued) 13 MB3887 (Continued) Power dissipation PD (mW) Power dissipation vs. Ambient temperature 800 740 700 600 500 400 300 200 100 0 −40 −20 0 +20 +40 +60 +80 Ambient temperature Ta ( °C) 14 +100 MB3887 ■ FUNCTIONAL DESCRIPTION 1. DC/DC Converter Unit (1) Reference voltage block (Ref) The reference voltage generator uses the voltage supplied from the VCC terminal (pin 18) to generate a temperature-compensated, stable voltage (5.0 V Typ) used as the reference supply voltage for the IC’s internal circuitry. This terminal can also be used to obtain a load current to a maximum of 1mA from the reference voltage VREF terminal (pin 6) . (2) Triangular wave oscillator block (OSC) The triangular wave oscillator builds the capacitor for frequency setting into, and generates the triangular wave oscillation waveform by connecting the frequency setting resistor with the RT terminal (pin 17) . The triangular wave is input to the PWM comparator on the IC. (3) Error amplifier block (Error Amp1) This amplifier detects the output signal from the current detection amplifier (Current amp1) , compares this to the +INE1 terminal (pin 9) , and outputs a PWM control signal to be used in controlling the charging current. In addition, an arbitrary loop gain can be set up by connecting a feedback resistor and capacitor between the FB1 terminal (pin 7) and -INE1 terminal (pin 8) , providing stable phase compensation to the system. (4) Error amplifier block (Error Amp2) This amplifier (Error Amp2) detects voltage drop of the AC adapter and outputs a PWM control signal. In addition, an arbitrary loop gain can be set by connecting a feedback resistor and capacitor from the FB2 terminal (pin 5) to the −INE2 terminal (pin 4) of the error amplifier, enabling stable phase compensation to the system. (5) Error amplifier block (Error Amp3) This error amplifier (Error Amp3) detects the output voltage from the DC/DC converter and outputs the PWM control signal. External output voltage setting resistors can be connected to the error amplifier inverted input terminal to set the desired level of output voltage from 1 cell to 4 cells. In addition, an arbitrary loop gain can be set by connecting a feedback resistor and capacitor from the FB3 terminal (pin 15) to the −INE3 terminal (pin 16) of the error amplifier, enabling stable phase compensation to the system. Connecting a soft-start capacitor to the CS terminal (pin 22) prevents rush currents when the IC is turned on. Using an error amplifier for soft-start detection makes the soft-start time constant, independent of the output load. (6) Current detection amplifier block (Current Amp1) The current detection amplifier (Current Amp1) detects a voltage drop which occurs between both ends of the output sense resistor (RS) due to the flow of the charge current, using the +INC1 terminal (pin 13) and −INC1 terminal (pin 12) . Then it outputs the signal amplified by 20 times to the error amplifier (Error Amp1) at the next stage. 15 MB3887 (7) PWM comparator block (PWM Comp.) The PWM comparator circuit is a voltage-pulse width converter for controlling the output duty of the error amplifiers (Error Amp1 to Error Amp3) depending on their output voltage. The PWM comparator circuit compares the triangular wave generated by the triangular wave oscillator to the error amplifier output voltage and turns on the external output transistor during the interval in which the triangular wave voltage is lower than the error amplifier output voltage. (8) Output block (OUT) The output circuit uses a totem-pole configuration capable of driving an external P-channel MOS FET. The output “L” level sets the output amplitude to 6 V (Typ) using the voltage generated by the bias voltage block (VH) . This results in increasing conversion efficiency and suppressing the withstand voltage of the connected external transistor in a wide range of input voltages. (9) Control block (CTL) Setting the CTL terminal (pin 14) low places the IC in the standby mode. (The supply current is 10 µA at maximum in the standby mode.) CTL function table CTL Power OUTD L OFF (Standby) Hi-Z H ON (Active) L (10) Bias voltage block (VH) The bias voltage circuit outputs VCC −6 V (Typ) as the minimum potential of the output circuit. In the standby mode, this circuit outputs the potential equal to VCC. 2. Protection Functions Under voltage lockout protection circuit (UVLO) The transient state or a momentary decrease in supply voltage or internal reference voltage (VREF) , which occurs when the power supply (VCC) is turned on, may cause malfunctions in the control IC, resulting in breakdown or degradation of the system. To prevent such malfunction, the under voltage lockout protection circuit detects a supply voltage or internal reference voltage drop and fixes the OUT terminal (pin 20) to the “H” level. The system restores voltage supply when the supply voltage or internal reference voltage reaches the threshold voltage of the under voltage lockout protection circuit. Protection circuit (UVLO) operation function table When UVLO is operating (VCC or VREF voltage is lower than UVLO threshold voltage.) OUTD OUT CS Hi-Z 16 H L MB3887 3. Soft-Start Function Soft-start block (SOFT) Connecting a capacitor to the CS terminal (pin 22) prevents rush currents when the IC is turned on. Using an error amplifier for soft-start detection makes the soft-start time constant, being independent of the output load of the DC/DC converter. ■ SETTING THE CHARGING VOLTAGE The charging voltage (DC/DC output voltage) can be set by connecting external voltage setting resistors (R3, R4) to the −INE3 terminal (pin 16) . Be sure to select a resistor value that allows you to ignore the on-resistor (35 Ω, 1mA) of the internal FET connected to the OUTD terminal (pin 11) . In standby mode, the charging voltage is applied to OUTD termial. Therefore, output voltage must be adjusted so that voltage applied to OUTD terminal (pin 11) is 17 V or less. Battery charging voltage : VO VO (V) = (R3 + R4) / R4 × 4.2 (V) B VO R3 <Error Amp3> −INE3 16 R4 11 OUTD − + + 4.2 V 22 CS ■ METHOD OF SETTING THE CHARGING CURRENT The charge current (output limit current) value can be set with the voltage at the +INE1 terminal (pin 9) . If a current exceeding the set value attempts to flow, the charge voltage drops according to the set current value. Battery charge current setting voltage : +INE1 +INE1 (V) = 20 × I1 (A) × RS (Ω) ■ METHOD OF SETTING THE TRIANGULAR WAVE OSCILLATION FREQUENCY The triangular wave oscillation frequency can be set by the timing resistor (RT) connected the RT terminal (pin 17) . Triangular wave oscillation frequency : fOSC fOSC (kHz) =: 13630 / RT (kΩ) 17 MB3887 ■ METHOD OF SETTING THE SOFT-START TIME For preventing rush current upon activation of IC, the IC allows soft-start using the capacitor (Cs) connected to the CS terminal (pin 22) . When CTL terminal (pin 14) is placed under “H” level and IC is activated (VCC ≥ UVLO threshold voltage) , Q2 is turned off and the external soft-start capacitor (Cs) connected to the CS terminal is charged at 10 µA. Error Amp output (FB3 terminal (pin 15) ) is determined by comparison between the lower voltage of the two non-reverse input terminals (4.2 V and CS terminal voltage) and reverse input terminal voltage (−INE3 terminal (pin 16) voltage) . Within the soft-start period (CS terminal voltage < 4.2 V) , FB3 is determined by comparison between −INE3 terminal voltage and CS terminal voltage, and DC/DC converter output voltage goes up proportionately with the increase of CS terminal voltage caused by charging on the soft-start capacitor. Soft-start time is found by the following formula : Soft-start time : ts (time to output 100 %) tS (s) =: 0.42 × CS (µF) = 4.9 V CS terminal voltage = 4.2 V Comparison with Error Amp block − INE3 voltage. =0V Soft-start time: ts VREF 10 µA FB3 10 µA 15 − + + −INE3 16 CS 22 Error Amp3 4.2 V CS Q2 Soft-start circuit 18 UVLO MB3887 ■ AC ADAPTOR VOLTAGE DETECTION • With an external resistor connected to the +INE2 terminal (pin 3) , the IC enters the dynamically-controlled charging mode to reduce the charge current to keep AC adapter power constant when the partial potential point A of the AC adapter voltage (VCC) becomes lower than the voltage at the −INE2 terminal. AC adapter detection voltage setting : Vth Vth (V) = (R1 + R2) / R2 × −INE2 −INE2 <Error Amp2> 4 − 3 + A VCC R1 +INE2 R2 ■ OPERATION TIMING DIAGRAM Error Amp2 FB2 Error Amp1 FB1 2.5 V Error Amp2 FB3 1.5 V OUT Constant voltage control Constant current control AC adapter dynamicallycontrolled charging 19 MB3887 ■ PROCESSING WITHOUT USING THE CURRENT AMP When Current Amp is not used, connect the +INC1 terminal (pin 13) , +INC2 terminal (pin 24) , −INC1 terminal (pin 12) , and −INC2 terminal (pin 1) to VREF, and then leave OUTC1 terminal (pin 10) and OUTC2 terminal (pin 2) open. “Open” 12 −INC1 +INC1 13 1 −INC2 +INC2 24 10 OUTC1 2 OUTC2 6 VREF Connection when Current Amp is not used 20 MB3887 ■ PROCESSING WITHOUT USING OF THE ERROR AMP When Error Amp is not used, leave FB1 terminal (pin 7) , FB2 terminal (pin 5) open and connect the −INE1 terminal (pin 8) and −INE2 terminal (pin 4) to GND and connect +INE1 terminal (pin 9) , and +INE2 terminal (pin 3) , to VREF. “Open” 9 +INE1 3 +INE2 8 −INE1 4 −INE2 7 FB1 5 FB2 6 VREF GND 23 Connection when Error Amp is not used 21 MB3887 ■ PROCESSING WITHOUT USING OF THE CS TERMINAL When soft-start function is not used, leave the CS terminal (pin 22) open. “Open” CS 22 Connection when soft-start time is not specified ■ NOTE ON AN EXTERNAL REVERSE-CURRENT PREVENTIVE DIODE • Insert a reverse-current preventive diode at one of the three locations marked * to prevent reverse current from the battery. • When selecting the reverse current prevention diode, be sure to consider the reverse voltage (VR) and reverse current (IR) of the diode. 21 VCC(O) VIN ∗ A 20 B OUT ∗ I1 RS ∗ VH 19 22 Battery BATT MB3887 ■ THE SEQUENCE OF THE START-UP AND OFF OF THE POWER SUPPLY Please start up and off the VCC terminal (pin 18) and VCC(O) terminal (pin 21) of the power supply terminal at the same time. No do occurrence of the bias from the VH terminal (pin 19) , when there is a period of 8 V or less in the VCC voltage after previously starting up VCC(O). At this time, there is a possibility of leading to permanent destruction of the device when the voltage of 17 V or more is impressed to the VCC(O) terminal (pin 21) . Moreover, when earliness VCC falls more than VCC(O) when falling, it is similar. 23 24 SW Q2 R11 30 kΩ R10 30 kΩ R16 R15 200 kΩ 120 Ω R14 1 kΩ R3 330 kΩ C6 1500 pF C4 0.022 µF 4 16 5 15 CS 22 FB3 11 OUTD −INE3 FB2 <SOFT> VREF 10 µA OUTC2 2 <Current Amp2> +INC2 + 24 × 20 − 1 −INC2 3 +INE2 R17 100 kΩ R19 100 kΩ R18 200 kΩ R5 330 kΩ R6 68 kΩ C8 10000 pF R7 R4 22 kΩ 82 kΩ −INE2 R8 100 kΩ −INE1 8 OUTC1 10 C10 <Current Amp1> 5600 pF +INC1 A + 13 R9 × 20 −INC1 10 kΩ − B 12 R12 30 kΩ +INE1 9 R13 20 kΩ FB1 7 4.2 V − + + 17 VCC (VCC − 6 V) 6 VREF bias VREF UVLO <CTL> VCC C9 0.1 µF 23 GND VREF 5.0 V <REF> 4.2 V 35 kΩ 0.91 V (0.77 V) − (VCC UVLO) 215 kΩ + 2.5 V 1.5 V <UVLO> Bias Voltage <VH> VCC <PWM Comp.> <OUT> + + + Drive − <OSC> RT R2 47 kΩ 45 pF <Error Amp3> VREF + − <Error Amp2> VREF + − <Error Amp1> VREF OUT VCC 14 CTL 18 VH 19 20 VCC (O) 21 C5 0.1 µF C3 100 µF + R1 B 0.033 Ω Battery I1 A C7 0.1 µF Note: Set output voltage so that voltage applied to OUTD terminal is 17 V or less. VO AC Adaptor Output voltage (Battery voltage) is adjustable + C1 22 µF C2 100 µF D1 22 µH Q1 L1 + IIN VIN = 13.93 V to 25 V (at 3 cell) VIN = 17.65 V to 25 V (at 4 cell) MB3887 ■ APPLICATION EXAMPLE MB3887 ■ PARTS LIST COMPONENT ITEM SPECIFICATION Q1 Q2 P-ch FET N-ch FET D1 Diode L1 Inductor 22 µH C1 C2, C3 C4 C5 C6 C7 C8 C9 C10 OS-CONTM Electrolytic Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 to R12 R13 R14 R15 R16, R18 R17, R19 Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor VENDOR PARTS No. VDS = −30 V, ID = ±8 A (Max) VISHAY SILICONIX VDS = 60 V, ID = 0.115 A VISHAY SILICONIX (Max) Si4435DY 2N7002E VF = 0.42 V (Max) , IF = 3 A ROHM RB053L-30 3.5 A, 31.6 mΩ TDK SLF12565T220M3R5 22 µF 100 µF 0.022 µF 0.1 µF 1500 pF 0.1 µF 10000 pF 0.1 µF 5600 pF 25 V (10 %) 25 V (10 %) 50 V 16 V 10 V 25 V 10 V 16 V 10 V SANYO SANYO TDK KYOCERA MURATA MURATA MURATA KYOCERA MURATA 25SL22M 25CV100AX C1608JB1H223K CM21W5R104K16 GRM39B152K10 GRM39F104KZ25 GRM39B103K10 CM21W5R104K16 GRM39B562K10 0.033 Ω 47 kΩ 330 kΩ 82 kΩ 330 kΩ 68 kΩ 22 kΩ 100 kΩ 10 kΩ 30 kΩ 20 kΩ 1 kΩ 120 Ω 200 kΩ 100 kΩ 1.0 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 1.0 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % SEIDEN TECHNO KOA KOA KOA KOA KOA KOA KOA KYOCERA KOA KOA KOA ssm KOA KOA RK73Z1J-0D RK73G1J-473D RK73G1J-334D RK73G1J-823D RK73G1J-334D RK73G1J-683D RK73G1J-223D RK73G1J-104D CR21-103-F RK73G1J-303D RK73G1J-203D RK73G1J-102D RR0816P121D RK73G1J-204D RK73G1J-104D Note : VISHAY SILICONIX : VISHAY Intertechnology, Inc. ROHM : ROHM CO., LTD. TDK : TDK Corporation SANYO : SANYO Electric Co., Ltd. KYOCERA : Kyocera Corporation MURATA : Murata Manufacturing Co., Ltd. SEIDEN TECHNO : SEIDEN TECHNO CO., LTD. KOA : KOA Corporation ssm : SUSUMU Co., Ltd. OS-CON is a trademark of SANYO Electric Co., Ltd. 25 MB3887 ■ REFERENCE DATA Conversion efficiency vs. BATT charge current (Constant voltage mode) 98 96 94 92 90 88 100 Ta = +25 °C VIN = 19 V BATT charge voltage = set at 12.6 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 Conversion efficiency η (%) Conversion efficiency η (%) 100 86 84 82 80 10 m Conversion efficiency vs. BATT charge voltage (Constant current mode) Ta = +25 °C VIN = 19 V BATT charge voltage = set at 12.6 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 98 96 94 92 90 88 86 84 82 80 100 m 1 10 0 2 BATT charge current IBATT (A) 8 10 12 14 16 Conversion efficiency vs. BATT charge voltage (Constant current mode) 100 100 Conversion efficiency η (%) Conversion efficiency η (%) 6 BATT charge voltage VBATT (V) Conversion efficiency vs. BATT charge current (Constant voltage mode) 98 96 94 92 Ta = +25 °C VIN = 19 V BATT charge voltage = set at 16.8 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 90 88 86 84 82 80 10 m 4 100 m 1 BATT charge current IBATT (A) 98 96 94 92 88 86 84 82 80 10 Ta = +25 °C VIN = 19 V BATT charge voltage = set at 16.8 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 90 0 2 4 6 8 10 12 14 16 18 20 BATT charge voltage VBATT (V) (Continued) 26 MB3887 Conversion efficiency vs. BATT charge voltage (Constant current mode) Conversion efficiency vs. BATT charge current (Constant voltage mode) 100 Conversion efficiency η (%) Conversion efficiency η (%) 100 98 96 94 92 Ta = +25 °C VIN = 19 V BATT charge voltage = set at 16.8 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 90 88 86 84 82 80 10 m 100 m 1 98 96 94 92 Ta = +25 °C VIN = 19 V BATT charge voltage = set at 16.8 V SW = ON Efficiency η (%) = (VBATT × IBATT) / (VIN × IIN) × 100 90 88 86 84 82 80 10 0 2 4 BATT charge current IBATT (A) 14 12 10 Dead Battery MODE DCC MODE 8 6 4 2 DCC : Dynamically-Controlled 0 0 0.5 1 1.5 2 2.5 3 3.5 10 12 14 16 18 20 4 BATT charge current IBATT (A) 4.5 BATT : Electronic load, (Product of KIKUSUI PLZ-150W) Ta = +25 °C VIN = 19 V 18 BATT voltage VBATT (V) BATT voltage VBATT (V) 20 Ta = +25 °C VIN = 19 V BATT : Electronic load, (Product of KIKUSUI PLZ-150W) 16 8 BATT voltage vs. BATT charge current (set at 16.8 V) BATT voltage vs. BATT charge current (set at 12.6 V) 18 6 BATT charge voltage VBATT (V) 16 14 12 Dead Battery MODE 10 8 6 4 2 DCC : Dynamically-Controlled 0 5 DCC MODE 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 BATT charge current IBATT (A) (Continued) 27 MB3887 Switching waveform constant voltage mode (set at 12.6 V) Ta = +25 °C VIN = 19 V BATT = 1.5 A VBATT (mV) 100 Switching waveform constant current mode (set at 12.6 V, with 10 V) VBATT (mV) Ta = +25 °C VIN = 19 V 100 BATT = 3.0 A 98 mVp-p VBATT 0 VBATT 0 VD −100 VD (V) 15 98 mVp-p VD −100 VD (V) 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 9 10 (µs) Switching waveform constant voltage mode (set at 16.8 V) = +25 °C VBATT (mV) Ta VIN = 19 V 100 BATT = 1.5 A 0 VBATT 2 3 4 5 6 7 8 9 10 (µs) Switching waveform constant current mode (set at 16.8 V, with 10 V) VBATT (mV) 100 58 mVp-p 1 Ta = +25 °C VIN = 19 V BATT = 3.0 A 96 mVp-p VBATT 0 0 VD −100 VD (V) 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 VD −100 VD (V) 15 9 10 (µs) 0 1 2 3 4 5 6 7 8 9 10 (µs) (Continued) 28 MB3887 (Continued) Soft-start operating waveform constant voltage mode (set at 12.6 V) Discharge operating waveform constant voltage mode (set at 12.6 V) VBATT (V) 20 VBATT (V) 20 Ta = +25 °C, VIN = 19 V BATT = 12 Ω 10 0 VCS (V) 4 VBATT 10 VBATT VCS ts = 10.4 ms 0 VCS (V) 4 2 2 0 0 VCS VCTL (V) 5 VCTL 0 VCTL (V) 5 Ta = +25 °C VIN = 19 V BATT = 12 Ω VCTL 0 0 2 4 6 8 10 12 14 16 18 20 (ms) 0 2 4 6 8 10 12 14 16 18 20 (ms) Discharge operating waveform constant voltage mode (set at 16.8 V) Soft-start operating waveform constant voltage mode (set at 16.8 V) VBATT (V) 20 VBATT (V) 20 Ta = +25 °C, VIN = 19 V BATT = 12 Ω 10 0 VCS (V) 4 VBATT 10 VBATT ts = 10.4 ms VCS 0 VCS (V) 4 2 2 0 0 VCS VCTL (V) 5 VCTL 0 VCTL (V) 5 Ta = +25 °C VIN = 19 V BATT = 12 Ω VCTL 0 0 2 4 6 8 10 12 14 16 18 20 (ms) 0 2 4 6 8 10 12 14 16 18 20 (ms) 29 MB3887 ■ USAGE PRECAUTIONS • Printed circuit board ground lines should be set up with consideration for common impedance. • Take appropriate static electricity measures. • Containers for semiconductor materials should have anti-static protection or be made of conductive material. • After mounting, printed circuit boards should be stored and shipped in conductive bags or containers. • Work platforms, tools, and instruments should be properly grounded. • Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground. • Do not apply negative voltages. • The use of negative voltages below −0.3 V may create parasitic transistors on LSI lines, which can cause malfunction. ■ ORDERING INFORMATION Part number Package Remarks MB3887PFV-❏❏❏ 24-pin plastic SSOP (FPT-24P-M03) Conventional version MB3887PFV-❏❏❏E1 24-pin plastic SSOP (FPT-24P-M03) Lead Free version ■ RoHS Compliance Information of Lead (Pb) Free version The LSI products of Fujitsu with “E1” are compliant with RoHS Directive , and has observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB) , and polybrominated diphenyl ethers (PBDE) . The product that conforms to this standard is added “E1” at the end of the part number. ■ MARKING FORMAT (Lead Free version) 3887 XXXX XXX E1 INDEX Lead Free version 30 MB3887 ■ LABELING SAMPLE (Lead free version) lead-free mark JEITA logo MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 JEDEC logo G Pb QC PASS PCS 1,000 MB123456P - 789 - GE1 2006/03/01 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 0605 - Z01A 1000 1561190005 Lead Free version 31 MB3887 ■ MB3887PFV-❏❏❏E1 Recommended Conditions of Moisture Sensitivity Level Item Condition Mounting Method IR (infrared reflow) , Manual soldering (partial heating method) Mounting times 2 times Storage period Before opening Please use it within two years after Manufacture. From opening to the 2nd reflow Less than 8 days When the storage period after opening was exceeded Please processes within 8 days after baking (125 °C, 24H) 5 °C to 30 °C, 70%RH or less (the lowest possible humidity) Storage conditions [Temperature Profile for FJ Standard IR Reflow] (1) IR (infrared reflow) H rank : 260 °C Max 260 °C 255 °C 170 °C to 190 °C (b) RT (a) (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Actual heating (d’) (e) Cooling (2) Manual soldering (partial heating method) Times 32 : 5 s max/pin (d) (e) (d') : Average 1 °C/s to 4 °C/s : Temperature 170 °C to 190 °C, 60s to 180s : Average 1 °C/s to 4 °C/s : Temperature 260 °C Max; 255 °C or more, 10s or less : Temperature 230 °C or more, 40s or less or Temperature 225 °C or more, 60s or less or Temperature 220 °C or more, 80s or less : Natural cooling or forced cooling Note : Temperature : the top of the package body Conditions : Temperature 400 °C Max (c) MB3887 ■ PACKAGE DIMENSION 24-pin plastic SSOP (FPT-24P-M03) 24-pin plastic SSOP (FPT-24P-M03) Lead pitch 0.65 mm Package width × package length 5.6 × 7.75 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.45 mm MAX Weight 0.12 g Code (Reference) P-SSOP24-5.6×7.75-0.65 Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max). Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. 0.17±0.03 (.007±.001) *17.75±0.10(.305±.004) 24 13 *2 5.60±0.10 7.60±0.20 (.220±.004) (.299±.008) INDEX Details of "A" part +0.20 1.25 –0.10 +.008 .049 –.004 (Mounting height) 0.25(.010) 1 "A" 12 0~8˚ +0.08 0.65(.026) 0.24 –0.07 +.003 .009 –.003 0.13(.005) M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.10±0.10 (.004±.004) (Stand off) 0.10(.004) C 2003 FUJITSU LIMITED F24018S-c-4-5 Dimensions in mm (inches). Note: The values in parentheses are reference values. 33 MB3887 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. Edited Business Promotion Dept. F0605