FUJITSU MB88151-400

FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-29116-2E
Spread Spectrum Clock Generator
MB88151
■ DESCRIPTION
MB88151 is a clock generator for EMI (Electro Magnetic Interference) reduction. The peak of unnecessary radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically with the
internal modulator. It corresponds to both of the center spread which modulates frequency in modulation off as
Middle Centered and down spread which modulates so as not to exceed frequency in modulation off.
■ FEATURES
•
•
•
•
•
•
Input frequency : 16.6 MHz to 33.4 MHz
Multiplication rate : 1/2, 1, 2, 4
Output frequency : 8.3 MHz to 16.7 MHz, 16.6 MHz to 33.4 MHz, 33.3 MHz to 66.7 MHz, 66.6 MHz to 133.4 MHz
Modulation rate : ± 0.5%, ± 1.5% (Center spread), − 1.0%, − 3.0% (Down spread)
Equipped with oscillation circuit : Range of oscillation 16.6 MHz to 33.4 MHz
Modulation clock output Duty : 40% to 60%
(Continued)
■ PACKAGE
8-pin plastic SOP
(FPT-8P-M02)
MB88151
(Continued)
• Modulation clock
Cycle-Cycle Jitter
MB88151-100, 200 : Less than 100 ps
MB88151-400
: Less than 150 ps
MB88151-500
: Less than 200 ps
• Low current consumption by CMOS process : 5 mA (24 MHz : Typ-sample, no load)
• Power supply voltage : 3.3 V ± 0.3 V
• Operating temperature : − 40 °C to + 85 °C
• Package : SOP 8-pin
■ PRODUCT LINEUP
MB88151 has four kinds of multiplication type.
Product
Input frequency range
Multiplier ratio
Output frequency range
Multiplied by 1
16.6 MHz to 33.4 MHz
Multiplied by 2
33.3 MHz to 66.7 MHz
Multiplied by 4
66.6 MHz to 133.4 MHz
Multiplied by 1/2
8.3 MHz to 16.7 MHz
MB88151-100
MB88151-200
16.6 MHz to 33.4 MHz
MB88151-400
MB88151-500
■ PIN ASSIGNMENT
TOP VIEW
XIN 1
VSS 2
8 XOUT
MB88151
7 VDD
SEL0 3
6 ENS
SEL1 4
5 CKOUT
FPT-8P-M02
■ PIN DESCRIPTION
2
Pin name
I/O
Pin no.
Description
XIN
I
1
Resonator connection pin/clock input pin
VSS
⎯
2
GND pin
SEL0
I
3
Modulation rate setting pin
SEL1
I
4
Modulation rate setting pin
CKOUT
O
5
Modulated clock output pin
ENS
I
6
Modulation enable setting pin (with pull-up resistance)
VDD
⎯
7
Power supply voltage pin
XOUT
O
8
Resonator connection pin
MB88151
■ I/O CIRCUIT TYPE
Pin
Circuit type
Remarks
• CMOS hysteresis input
SEL0
SEL1
• CMOS hysteresis input with pull-up
resistor 50 kΩ (Typ)
50 kΩ
ENS
• CMOS output
• IOL = 4 mA
CKOUT
Note : For XIN and XOUT pins, see “■OSCILLATION CIRCUIT”.
3
MB88151
■ HANDLING DEVICES
Preventing Latchup
A latchup can occur if, on this device, (a) a voltage higher than VDD or a voltage lower than VSS is applied to an
input or output pin or (b) a voltage higher than the rating is applied between VDD and VSS. The latchup, if it occurs,
significantly increases the power supply current and may cause thermal destruction of an element. When you
use this device, be very careful not to exceed the maximum rating.
Handling unused pins
Do not leave an unused input pin open, since it may cause a malfunction. Handle by, using a pull-up or
pull-down resistor.
Unused output pin should be opened.
The attention when the external clock is used
Input the clock to XIN pin, and XOUT pin should be opened when you use the external clock.
Please pay attention so that an overshoot and an undershoot do not occur to an input clock of XIN pin.
Power supply pins
Please design connecting the power supply pin of this device by as low impedance as possible from the current
supply source.
We recommend connecting electrolytic capacitor (about 10 µF) and the ceramic capacitor (about 0.01 µF) in
parallel between VSS and VDD near the device, as a bypass capacitor.
Oscillation circuit
Noise near the XIN and XOUT pins may cause the device to malfunction. Design printed circuit boards so that
electric wiring of XIN or XOUT pin and the resonator do not intersect other wiring.
Design the printed circuit board that surrounds the XIN and XOUT pins with ground.
4
MB88151
■ BLOCK DIAGRAM
VDD
Modulation rate
setting
SEL1
Modulation rate
setting
SEL0
PLL block
Clock output
Modulation enable setting
ENS
CKOUT
Reference clock
XOUT
Rf = 1 MΩ
XIN
VSS
1
−
M
Phase
compare
Reference clock
1
−
N
Charge
pump
V/I
conversion
IDAC
Modulation clock
output
Loop filter
1
−
L
ICO
Modulation logic
Modulation
rate setting/
Modulation
enable setting
MB88151 PLL block
A glitchless IDAC (current output D/A converter) provides precise modulation,
thereby dramatically reducing EMI.
5
MB88151
■ PIN SETTING
When changing the pin setting, the stabilization wait time for the modulation clock is required. The stabilization
wait time for the modulation clock take the maximum value of “■ ELECTRICAL CHARACTERISTICS • AC
characteristics Lock-Up time”.
ENS modulation enable setting
ENS
Modulation
L
No modulation
H
Modulation
Note : Spectrum does not spread when “L” is set to ENS. The clock with low jitter can be obtained. Because of
ENS has Pull-up resistance, spectrum spread when “H” is set to it or open the terminal.
SEL0, SEL1 Modulation rate setting
SEL1
SEL0
Modulation rate
Modulation type
L
L
± 1.5%
Center spread
L
H
± 0.5%
Center spread
H
L
− 1.0%
Down spread
H
H
− 3.0%
Down spread
Note : The modulation rate can be changed at the level of the terminal.
• Center spread
Spectrum is spread (modulated) by centering on the frequency in modulation off.
Radiation level
Modulation width 3.0%
−1.5%
+1.5%
Frequency
Frequency in modulation off
Center spread example of ± 1.5% modulation rate
6
MB88151
• Down spread
Spectrum is spread (modulated) below the frequency in modulation off.
Modulation width 3.0%
Radiation level
−3.0%
Frequency
Frequency in modulation off
Down spread example of − 3.0% modulation rate
7
MB88151
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Unit
Min
Max
VDD
− 0.5
+ 4.0
V
Input voltage*
VI
VSS − 0.5
VDD + 0.5
V
Output voltage*
VO
VSS − 0.5
VDD + 0.5
V
Storage temperature
TST
− 55
+ 125
°C
Operation junction temperature
TJ
− 40
+ 125
°C
Output current
IO
− 14
+ 14
mA
Overshoot
VIOVER
⎯
VDD + 1.0 (tOVER ≤ 50 ns)
V
Undershoot
VIUNDER
VSS−1.0 (tUNDER ≤ 50 ns)
⎯
V
Power supply voltage*
* : The parameter is based on VSS = 0.0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Overshoot/Undershoot
tUNDER ≤ 50 ns
VIOVER ≤ VDD + 1.0 V
VDD
Input pin
VSS
tOVER ≤ 50 ns
8
VIUNDER ≤ VSS − 1.0 V
MB88151
■ RECOMMENDED OPERATING CONDITIONS
(VSS = 0.0 V)
Parameter
Symbol
Pin
Conditions
Power supply voltage
VDD
VDD
“H” level input voltage
VIH
“L” level input voltage
VIL
XIN,
SEL0,
SEL1,
ENS
Input clock
duty cycle
tDCI
Operating temperature
Ta
Value
Unit
Min
Typ
Max
⎯
3.0
3.3
3.6
V
⎯
VDD × 0.80
⎯
VDD + 0.3
V
⎯
VSS
⎯
VDD × 0.20
V
XIN
16.6 MHz to
33.4 MHz
40
50
60
%
⎯
⎯
− 40
⎯
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Input clock duty cycle (tDCI = tb/ta)
ta
tb
CKIN
1.5 V
9
MB88151
■ ELECTRICAL CHARACTERISTICS
• DC Characteristics
(Ta = − 40 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)
Parameter
Power supply current
Symbol
Pin
Conditions
ICC
VDD
Typ
Max
No load capacitance at
output 24 MHz
MB88151-100
⎯
5.0
7.0
mA
“H” level output,
IOH = − 4 mA
VDD − 0.5
⎯
VDD
V
“L” level output,
IOL = 4 mA
VSS
⎯
0.4
V
⎯
45
⎯
Ω
Ta = + 25 °C,
VDD = VI = 0.0 V,
f = 1 MHz
⎯
⎯
16
pF
8.3 MHz to 66.7 MHz
⎯
⎯
15
CKOUT 66.7 MHz to 100 MHz
⎯
⎯
10
100 MHz to 133.4 MHz
⎯
⎯
7
VIL = 0.0 V
25
50
200
CKOUT
VOL
Output impedance
Input capacitance
Load capacitance
Input pull-up resistance
10
ZO
CIN
CL
RPU
Unit
Min
VOH
Output voltage
Value
CKOUT 8.3 MHz to 133.4 MHz
XIN,
SEL0,
SEL1,
ENS
ENS
pF
kΩ
MB88151
• AC Characteristics
(Ta = − 40 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)
Parameter
Symbol
Pin
Conditions
Oscillation frequency
fx
XIN,
XOUT
Input frequency
fin
XIN
Output frequency
fOUT
CKOUT
Value
Unit
Min
Typ
Max
Fundamental
oscillation
16.6
⎯
33.4
MHz
External clock input
16.6
⎯
33.4
MHz
MB88151-100
(Multiply by 1)
16.6
⎯
33.4
MB88151-200
(Multiply by 2)
33.3
⎯
66.7
MB88151-400
(Multiply by 4)
66.6
⎯
133.4
MB88151-500
(2-frequency division)
8.3
⎯
16.7
MHz
Output slew rate
SR
CKOUT
0.4 V to 2.4 V
Load capacitance 15 pF
0.4
⎯
4.0
V/ns
Output clock duty cycle
tDCC
CKOUT
1.5 V
40
⎯
60
%
Modulation frequency
fMOD
CKOUT
⎯
⎯
12.5
⎯
kHz
tLK
CKOUT
⎯
⎯
2
5
ms
MB88151-100, 200
No load capacitance,
Ta = + 25 °C,
VDD = 3.3 V,
Standard deviation σ
⎯
⎯
100
MB88151-400
No load capacitance,
CKOUT Ta = + 25 °C,
VDD = 3.3 V,
Standard deviation σ
⎯
⎯
150
MB88151-500
No load capacitance,
Ta = + 25 °C,
VDD = 3.3 V,
Standard deviation σ
⎯
⎯
200
Lock-Up time
Cycle-cycle jitter
tJC
ps
Note : The modulation clock stabilization wait time is required after the power is turned on, the IC recovers from
power saving, or after FREQ (frequency range) or ENS (modulation ON/OFF) setting is changed. For the
modulation clock stabilization wait time, assign the maximum value for lock-up time.
11
MB88151
■ OUTPUT CLOCK DUTY CYCLE (tDCC = tb/ta)
ta
tb
1.5 V
CKOUT
■ INPUT FREQUENCY (fin = 1/tin)
tin
0.8 VDD
CKIN
■ OUTPUT SLEW RATE (SR)
2.4 V
0.4 V
CKOUT
tr
tf
Note : SR = (2.4 − 0.4) /tr, SR = (2.4 − 0.4) /tf
■ CYCLE-CYCLE JITTER (tJC = | tn − tn+1 |)
CKOUT
tn
tn+1
Note : Cycle-cycle jitter is defined the difference between a certain cycle and immediately after
(or, immediately before) .
12
MB88151
■ MODULATION WAVEFORM
• ±1.5% modulation rate, Example of center spread
CKOUT
output frequency
+ 1.5 %
Frequency at modulation OFF
Time
− 1.5 %
fMOD = 12.5 kHz (Typ)
• −1.0% modulation rate, Example of down spread
CKOUT
output frequency
Frequency at modulation OFF
Time
− 0.5 %
− 1.0 %
fMOD = 12.5 kHz (Typ)
13
MB88151
■ LOCK-UP TIME
3.0 V
VDD
Internal clock
stabilization wait tim
XIN
Setting pin
SEL0,
SEL1,
ENS
VIH
tLK
(lock-up time )
CKOUT
If the setting pin is fixed at the “H” or “L” level, the maximum time after the power is turned on until the set clock
signal is output from CKOUT pin is (the stabilization wait time of input clock to XIN pin) + (the lock-up time “tLK”).
For the input clock stabilization time, check the characteristics of the resonator or oscillator used.
XIN
ENS
VIH
VIL
tLK
(lock-up time )
tLK
(lock-up time )
CKOUT
For modulation enable control using the ENS pin during normal operation, the set clock signal is output from
CKOUT pin at most the lock-up time (tLK) after the level at the ENS pin is determined.
Note : When the pin setting is changed, the CKOUT pin output clock stabilization time is required. Until the output
clock signal becomes stable, the output frequency, output clock duty cycle, modulation period, and cyclecycle jitter cannot be guaranteed. It is therefore advisable to perform processing such as cancelling a reset
of the device at the succeeding stage after the lock-up time.
14
MB88151
■ OSCILLATION CIRCUIT
The figure below shows the connection example about general resonator. The oscillation circuit has the built-in
resistance (1 MΩ) . The value of capacity (C1 and C2) is required adjusting to the most suitable value of individual
resonator.
The most suitable value is different by individual resonator. Please refer to the resonator manufacturer which
you use for the most suitable value.
Input the clock to XIN pin, and do not connect anything with XOUT pin if you use the external clock (you do not
use the resonator).
• When using the resonator
LSI Internal
Rf (1 MΩ)
XIN Pin
XOUT Pin
LSI External
C1
C2
• When using an external clock
LSI Internal
Rf (1 MΩ)
XIN Pin
XOUT Pin
LSI External
External clock
Note :
OPEN
Note that a jitter characteristic of an input clock may cause an affect a cycle-cycle jitter
characteristic.
15
MB88151
■ INTERCONNECTION CIRCUIT EXAMPLE
C2
C1
Xtal
1
8
2
7
MB88151
SEL0
3
6
4
5
+
ENS
R1
SEL1
C4
C1, C2
C3
C4
R1
16
C3
: Oscillation stabilization capacitance (see “■OSCILLATION CIRCUIT”.)
: Capacitor of 10 µF or higher
: Capacitor about 0.01 µF (connect a capacitor of good high frequency
property (ex. laminated ceramic capacitor) to close to this device)
: Impedance matching resistor for board pattern
MB88151
■ SPECTRUM EXAMPLE CHARACTERISTICS
The condition of the examples of the characteristic is shown as follows : Input frequency = 20 MHz (Output
frequency = 20 MHz : Using MB88151-100 (Multiply by 1)), Power - supply voltage = 3.3 V, None load capacity,
Modulation rate = ± 1.5% (center spread).
Spectrum analyzer HP4396B is connected with CKOUT. The result of the measurement with RBW = 1 kHz
(ATT use for − 6dB).
CH B Spectrum
10 dB /REF 0 dBm
No modulation
−6.54 dBm
Avg
4
±1.5% modulation
−24.45 dBm
RBW# 1 kHZ
VBW 1 kHZ
CENTER 20 MHZ
ATT 6 dB
SWP 2.505 s
SPAN 4 MHZ
17
MB88151
■ ORDERING INFORMATION
Part number
Input frequency
range
MB88151PNF-G-100-JN-ERE1
MB88151PNF-G-200-JN-ERE1
MB88151PNF-G-400-JN-ERE1
MB88151PNF-G-500-JN-ERE1
18
Output frequency
range
Package
Remarks
Multiplied by 1 16.6 MHz to 33.4 MHz
8-pin plastic
Multiplied by 2 33.3 MHz to 66.7 MHz
SOP
Multiplied by 4 66.6 MHz to 133.4 MHz
(FPT-8P-M02)
Multiplied by 1/2 8.3 MHz to 16.7 MHz
MB88151PNF-G-100-JNE1
MB88151PNF-G-200-JNE1
MB88151PNF-G-400-JNE1
MB88151PNF-G-500-JNE1
MB88151PNF-G-100-JN-EFE1
MB88151PNF-G-200-JN-EFE1
MB88151PNF-G-400-JN-EFE1
MB88151PNF-G-500-JN-EFE1
Multiplier
ratio
16.6 MHz to
33.4 MHz
Multiplied by 1 16.6 MHz to 33.4 MHz
8-pin plastic Emboss
Multiplied by 2 33.3 MHz to 66.7 MHz
SOP
taping
Multiplied by 4 66.6 MHz to 133.4 MHz
(FPT-8P-M02) (EF type)
Multiplied by 1/2 8.3 MHz to 16.7 MHz
Multiplied by 1 16.6 MHz to 33.4 MHz
8-pin plastic Emboss
Multiplied by 2 33.3 MHz to 66.7 MHz
taping
SOP
Multiplied by 4 66.6 MHz to 133.4 MHz
(FPT-8P-M02) (ER type)
Multiplied by 1/2 8.3 MHz to 16.7 MHz
MB88151
■ PACKAGE DIMENSION
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
8-pin plastic SOP
(FPT-8P-M02)
+0.25
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.40
(.154±.012) (.236±.016)
Details of "A" part
45˚
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8˚
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002 FUJITSU LIMITED F08004S-c-4-7
Dimensions in mm (inches)
Note: The values in parentheses are reference values.
19
MB88151
FUJITSU LIMITED
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Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
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assumes no liability for any damages whatsoever arising out of
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function and schematic diagrams, shall not be construed as license
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from the use of information contained herein.
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and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
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satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
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of those products from Japan.
F0502
© 2005 FUJITSU LIMITED Printed in Japan