17 September 1997 SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200(5.08) .180(4.57) .03 (.76) .020 SQ.LEAD LEAD TYP. .05(1.27) COLLECTOR (.51) .050 (1.27) EMITTER .125 (3.18) .115 (2.92) DIA. .250 (6.35) MAX. .500 MIN. (12.7) .155 DIA. (3.94) DIM_100.ds4 © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) UNITS TEST CONDITIONS SCHEMATIC 30 V 5V 70 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. 17 September 1997 SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_015.cdr Responsivity vs Angular Displacement Fig. 2 gra_047.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Collector Current vs Ambient Temperature -40 -30 -20 -10 0 1.6 1.2 0.8 0.4 0.0 +10 +20 +30 +40 0 Angular displacement - degrees Fig. 3 gra_039.ds4 2.0 Normalized collector current Relative response Fig. 1 cir_004.cdr Dark Current vs Temperature 10 20 30 40 50 60 70 80 Ambient temperature - °C Fig. 4 gra_301.cdr Non-Saturated Switching Time vs Load Resistance gra_041.ds4 Response time - µs 100 10 1 10 100 1000 10000 Load resistance - Ohms © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity Fig. 6 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Coupling Characteristics with SEP8505 gra_029.ds4 10 7 Light current - mA Relative response gra_036.ds4 VCE = 5 V IF = 25 mA TA = 25 °C 4 2 1 0.7 0.4 0.2 0.1 400 600 800 1000 1200 0.01 Wavelength - nm 0.02 0.04 0.1 0.2 0.4 0.7 1 Lens-to-lens separation - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc.