SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ (nominal) beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (- 55¡C to +125¡C) • Ideal for high pulsed current applications • Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE3470 45° .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .046(1.17) .500 .036(.91) (12.70) MIN. 1 2 .048(1.22) .160 (4.06) DIA. .137 (3.48) .100(2.54)DIA NOM .028(.71) .015 (0.36) .018 .153 (3.89) .140 (3.56) DIA. (.460) LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) DIM_005a.ds4 SE5470 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) 45° .046(1.17) .500 .036(.91) (12.70) MIN. 1 .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .200 .247 (6.27) .224 (5.89) 5.08 .100(2.54)DIA NOM 2 .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) DIM_005b.ds4 32 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) 100 mA 3A 150 mW [À] -55¡C to 125¡C -65¡C to 150¡C 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 33 SE3470/5470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement (SE3470) Fig. 2 gra_017.ds4 Relative intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 Radiant Intensity vs Angular Displacement (SE5470) +15 +30 +45 +60 -40 Angular displacement - degrees Fig. 3 gra_018.ds4 -20 -10 0 +10 +20 +30 +40 Forward Voltage vs Forward Current gra_026.ds4 1.6 Pulsed 200 Forward voltage - V Normalized radiant intensity - % 250 150 100 50 0.0 1.5 1.4 1.3 1.2 1.1 1.0 0 100 200 300 400 500 0 Forward current - mA Fig. 5 -30 Angular displacement - degrees Fig. 4 Radiant Intensity vs Forward Current gra_023.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 40 60 80 100 Forward current - mA Fig. 6 Forward Voltage vs Temperature 20 gra_025.ds4 1.70 Coupling Characteristics SE3470 with SD3443 gra_021.ds4 1.0 Normalized light current Forward voltage - V 1.65 1.60 1.55 1.50 1.45 I 1.40 0.8 0.6 0.4 0.2 1.35 1.30 0.0 -50 -25 0 25 50 75 100 125 0.0 34 0.2 0.4 0.6 0.8 1.0 Window-to-window distance - inches Temperature - C h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3470/5470 AlGaAs Infrared Emitting Diode Fig. 7 Spectral Bandwidth Fig. 8 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Normalized radiant intensity Relative intensity gra_011.ds4 0.0 760 800 840 880 920 960 1000 Radiant Intensity vs Case Temperature Normalized to IF = 100 mA TA = 25 °C 5.0 4.0 3.0 2.0 1.0 0.5 0.4 0.3 0.2 0.1 -75 -50 -25 0 25 50 75 100 125 Case temperature - °C Wavelength - nm Fig. 9 gra_022.ds4 Coupling Characteristics SE5470 with SD5443 gra_024.ds4 Normalized light current 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 Lens-to-lens distance - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 35