2N5038 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power-switching • High power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5038J) • JANTX level (2N5038JX) • JANTXV level (2N5038JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-3 metal can Also available in chip configuration Chip geometry 9351 Reference document: MIL-PRF-19500/439 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 90 Collector-Base Voltage VCBO 150 Unit Volts Volts Emitter-Base Voltage VEBO 7 Volts Collector Current, Continuous IC 20 A Power Dissipation, TA = 25°C Derate linearly above 25°C PT 140 800 RθJA 1.25 W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5038 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200 mA 90 Units Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 25 mA 7 Volts Collector-Base Cutoff Current ICBO1 VCB = 150 Volts 1 µA Collector-Emitter Cutoff Current ICEO VCE = 70 Volts 1 µA Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE =100Volts, VEB =1.5Volts VCE =100Volts, VEB=1.5Volts, TA = 150°C 5 100 µA Emitter-Base Cutoff Current IEBO VEB = 5 Volts 1 µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage VBE Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 5 Volts IC = 2 A, VCE = 5 Volts IC = 12 A, VCE = 5 Volts IC = 12 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 12 A Min 50 50 15 10 Typ Max Units 200 IC = 20 A, IB = 5 A IC = 12 A, IB = 1.2 A IC = 20 A, IB = 5 A 1.8 Volts 3.3 1.0 2.5 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Test Conditions VCE = 10 Volts, IC = 2 A, f = 5 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ 12 48 500 pF Switching Characteristics Saturated Turn-On Time tON IC = 12 A, IB1 = 1.2 A 0.5 µs Saturated Turn-Off Time tOFF IC = 12 A, IB1 = -IB2 = 1.2 A 2.0 µs Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2