BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183F Marking RHs 1=B Pin Configuration 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation1) Ptot 450 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS ≤ 62 °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS ≤ 195 K/W 1T S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-10-14 BFR183F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 8 V, pulse measured 2 2005-10-14 BFR183F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.34 0.54 Cce - 0.2 - Ceb - 1.1 - GHz IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 0.9 - f = 1.8 GHz - 1.4 - G ms - 21 - dB G ma - 14.5 - dB Power gain, maximum stableIC = 15 mA IC = 15 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt , f = 900 MHz Power gain, maximum available1) IC = 15 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt , f = 1.8 GHz |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 8 V, Z S = ZL = 50 Ω, f = 900 MHz - 17 - f = 1.8 MHz - 11 - IP 3 - 26 - P-1dB - 10.5 - Third order intercept point at output2) dBm VCE = 8 V, I C = 15 mA, f = 900MHz, ZS=ZL=50 Ω 1dB Compression point3) IC = 15 mA, VCE = 8 V, f = 900MHz, ZS=ZL=50 Ω 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S 21 / S12 | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3DC current at no input power 3 2005-10-14 BFR183F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = Ω fF ps mA V ns - 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B' C' L3 C E' C6 C2 L1 C5 C3 E L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.675 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF Valid up to 6GHz EHA07524 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 2005-10-14 Package TSFP-3 BFR183F Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout Manufacturer Type code Pin 1 BCR847BF Example Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 5 2005-10-14 BFR183F Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. 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