SIDE VIEW IRMS6453 4 Mb/s Infrared Data Transceiver Preliminary Dimensions in inches Absolute Maximum Ratings, TA=25°C (except where noted) Features • IrDA, HP-SIR, Local Talk and Sharp ASK • Ultracompact package: • H 4.0 mm x D 4.8 mm x L 9.8 mm • Data rates from 9600 bit/s to 4 Mbit/s • Supply voltage 2.7 V to 5.25 V • Power Shutdown mode (<100 nA) • Low power consumption – 1.7 mA (typ) @ 2.7 V – 3.2 mA (typ) @ 5.0 V • Zero external resistors required Supply Voltage Range, all states, VCC................................ –0.5 to +5.5 V Storage Temperature, TSTG.................................................. –25 to +85°C Ambient Temperature, operating, TA ................................... –25 to +75°C Lead Solder Temperature, .................................................... 240°C<10 s IC Junction Temperature, TJ ........................................................... 125°C Average IR LED Current, DC, ILED ................................................100 mA Repetitive Pulsed IR LED Current, <90 µs, ton <25%, ILED(RP) ......................................................710 mA Transmit Data Input Voltage, VTxD ..............................–0.5 to VCC + 0.5 V Receive Data Output Voltage, VRxD ............................–0.5 to VCC + 0.5 V Pin Number Symbol Description 1 LEDA LED Anode 2 LEDC LED Cathode 3 TxD Transmit Data Description 4 RxD Receive Data Responding to the volumetric constraints of today’s ultra-compact and power conscious portable products, Infineon has developed the next generation in infrared wireless communication transceivers. The transceiver has been designed to support up to 4 Mbit/s IrDA, HP-SIR, Local Talk and Sharp ASK modes. The device combines an LED, photodiode, LED driver and a fully differential receiver into a single integrated package. 5 SD/ Mode Shutdown/ Mode Select 6 VCC Positive Supply (Power) 7 NC No Connect* 8 GND Ground * Pin 7 internally grounded 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 1 Table 1. Input/Output Functional Description Symbol I/O Type Polarity Function RxD Output Active Low This output indicates received serial data. It is a push-pull CMOS driver capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. This output may switch indeterminately when the module is transmitting. This output pin is in tri-state mode when the module is in shutdown mode and during digital serial programming operations. RxD is high at initializaton. TxD Input Active High This CMOS input is used to transmit serial data when SD/ Mode is low. An on-chip protection circuit disables the LED driver if the TxDpin is asserted for longer than 60 µs. When used in conjunction with the SD/ Mode pin. TxD is low at initializaton. SD/ Mode Input Active High Assertion of this pin high for a period of time exceeding 400 µs places the module into shutdown mode. On the falling edge of this signal, the state of the TxDpin is sampled and used to set receiver low bandwidth (TxD= Low) or high bandwidth (TxD= High) mode. See Figures 7 and 8 for timings. SD is low at initializaton VCC Positive Supply - Connect to positive power supply (2.7 V to 5.25 V). Placement of a 1.0 µF to 10.0 µF decoupling ceramic capacitor as close as possible to the V CC pin is recommended. GND Ground (Power) - Connect to power supply ground. A solid ground plane is recommended. NC No Connect - This pin could be connected to ground. LEDA Input - This pin can be connected directly to VCC. No series resistor is required. LEDC Output - LED cathode. Leave this pin unconnected. This pin may be monitored to determine the state of the LED. Figure 1. Block Diagram Figure 2. Minimum Infineon Low-Power Integrated Infrared Transceiver Circuit Diagram VCC VCC Amp Comp Driver C1 = 1 µF to 10 µF RxD LEDA SD/ Mode TxD VCC LEDA LEDC NC IR Controller VCC IRTX TxD IRMS6453 IRMS6452 GPO Mode & Power Control SD/ Mode LEDC Driver RxD IRRX GND GND Table 2. Recommended Operating Conditions Symbol Parameter Min VCC Supply Voltage TA Ambient Operating Temperature Typical Max Unit 2.7 5.25 V -25 75 ˚C Max Unit Conditions Table 3. DC Electrical Characteristics Symbol Parameter Min 2.0 Typical Conditions ICC Supply Current; Listening 3.2 4.5 mA Typical value obtained at Vcc=5 V ICC Supply Current; Receiving 3.8 15 mA Interface and optical input power dependent ISD Supply Current; Shutdown 50 100 nA VSD=VCC Typical Max Unit Conditions 0.5 V Table 4. Receiver DC Electrical Characteristics Symbol Parameter VOL RxD Output Low Voltage IOL Static Sink Current on RxD VOH RxD Output High Voltage IOH Static Source Current on RxD Min 2.4 Vcc-0.5 mA 2.2KΩ load. V 2.4 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) mA 2.2KΩ load. IRMS6453 2 Symbol Parameter Min RL RxD Rosistive Load 2.2 CL RxD Capacitive Load Typical Max Unit Conditions kΩ 50 pF Max Unit 0.8 V Table 5. Transmitter DC Electrical Characteristics Symbol Parameter VIL TxD Input Voltage Low VIH TxD Input Voltage High Ci Input Capacitance Min Typical 2.4 Conditions V 5 pF Table 6. SD/Mode DC Electrical Characteristics Symbol Parameter VIL SD/ Mode Input Voltage Low VIH SD/ Mode Input Voltage High Ci Input Capacitance Min Typical Max Unit 0.8 V 2.4 Conditions V 5 pF Table 7. Optical Characteristics Symbol Parameter Typical Max Unit Conditions Emin Minimum Detection Irradiance 9.6-115.2 kbit/s, SIR Min 3.7 4 µW/ cm2 9.6 kbit/s to 115.2 kbit/s Emin Minimum Detection Irradiance 1.152Mbit/s, MIR 4 µW/ cm2 1.152 Mbit/s Emin Minimum Detection Irradiance 4 Mbit/s, FIR 7.9 9 µW/ cm2 4 Mbit/s tr,tf LED Optical Rise/Fall Time 40 ns txpw SIR Optical Pulse Width 1.41 22.13 µs TxD Input Pulse Width = 3/16 duty cycle txpw MIR Optical Pulse Width 147 261 ns TxD Input Pulse Width = 217ns txpw FIR Optical Pulse Width 115 Ie Output Radiant Intensity 110 aÅ Output Radiant Half Intensity Angle ±15 λp Peak Wavelength 850 200 140 ns TxD Input Pulse Width = 125ns 400 mW/sr TxD=High, SD/Mode=Low, VCC=3.3 V, α = ±15°, TA=25°C, TX@2MHz and 25% ° 870 Optical Overshoot 900 nm 25 % Table 8. AC Electrical Characteristics Symbol Parameter Min Typical Max Unit Conditions tr RxD Rise Time 60 ns RL=2.2 K, CL=50 pF tf RxD Fall Time 50 ns RL=2.2 K, CL=50 pF tSU,tH TxDSetup and Hold to SD/ Mode Falling Edge 10 ns tw RxD Pulse Width (SIR) 1.0 2.1 µs tw RxD Pulse Width (1.152Mbit/s) 100 600 ns tw RxD Pulse Width (4Mbit/s, single pulse) 80 165 ns tw RxD Pulse Width (4Mbit/s, double pulse) 210 290 ns tL Receiver Latency 100 µs tRxDEN RxD Valid After Shutdown 200 µs tLEDP LED Protection Time-out 100 µs ILED Peak Transmit Current 10 710 mA 25% duty cycle ILED Average Transmit Current 5 150 mA 25% duty cycle 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IRMS6453 3 Figure 3. Timing Diagrams RxD Valid after Shutdown Latency Timing V IH V IH TxD SD/ Mode 50% 50% V IL V IL t RXEN tL VOH V OH RxD 50% RxD 50% VOL V OL RxD Timing 1.2 and 4 Mbit/s Mode LED Protection Timing V IH TxD tW 50% V IL VOH 50% RxD t LED P V OL LEDC 50% RxD Timing, SIR mode. The output may be indeterminate in the shaded area. Spurious transitions may occur. RxD Rise and Fall Timing Measurements tW ( m i n ) tP H L tW ( m a x ) tP L H RxD 50% VO H 90% VO H RxD 50% 10% V OL VO L Figure 4. Bandwidth Programming Setting the Receiver to High BW Mode (FIR) Setting the Receiver to Low BW Mode (SIR & MIR) V IH SD/ Mode V IH SD/ Mode 50% 50% V IL tSU TxD V IL tSU tH tH V IH 50% 50% TxD (Setting high bandwidth mode) V IL 50% 50% (Setting low bandwidth mode) V IL 4. After waiting th ≥ 10 ns, set the TxDinput to ’logic low’. The receiver is in high bandwidth mode within 200 µs of the SD/ Mode rising edge or 10 ns after the SD/ Mode falling edge, whichever occurs later. The transceiver powers on with the receiver in low bandwidth mode. To enable high bandwidth mode, apply timings as shown in the figure 7, to the SD/ Mode and the TxD inputs. Note that the internal LED driver is disabled when SD/ Mode is active and is not enabled until the next rising edge of TxD. This ensures that the LED will not be active during bandwidth adjustment. It is recommended that the SD/ Mode pin be connected to GND if bandwidth adjustment and shutdown mode are not used. Setting the Receiver to Low Bandwidth Mode (see Figure 4) 1. Set the SD/ Mode input to ’logic high’. 2. Ensure that the TxD input is at ’logic low’. Wait tsu ≥ 10 ns. 3. Set the SD/ Mode to ’logic low’. (This high-to-low transition latches the state of TxD, which determines the receiver bandwidth.) Setting the Receiver to High Bandwidth Mode (see Figure 4) 1. Set the SD/ Mode input to ’logic high’. 4. Ensure that the TxD input remains low for th ≥ 10 ns. The receiver is in low bandwidth mode within 200 µs of the SD/ Mode rising edge or 10 ns after the SD/ Mode falling edge, whichever occurs later. 2. Set the TxD input to ’logic high’. Wait tsu ≥ 10 ns. 3. Set the SD/ Mode to ’logic low’. (This high-to-low transition latches the state of TxD, which determines the receiver bandwidth.) 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IRMS6453 4 Figure 5. Infrared Reflow Soldering Profile 300 Maximum 240(+5/–0) °C 250 Temperature(°C) 210°C 200 150 30 s minimum30 s maximum 100 50 60 s minimum 0 0 5 0 Note: Peak temperature is 240 (+5 –0)°C for less than 10 seconds. Figure 6. Super I/O (PC87338VLJ) to IRMS6453 VCC 100 150 Time (sec) Figure 8. Super I/O (PC87338VLJ) to IRMS6453 with independent VLED power supply VLED VCC 0.1 µF 22 µF R0 R0 50 VCC IR TxD 3 65 50 VCC GND IR SLO VSS 42 4 67 IR RxD 4 67 RxD SD GND 8 5 68 IRMS6453 IRMX6452 PC87338VLJ PC87338VLJ GND VSS 42 C4=22 µF 3 TxD IR TxD 65 TxD IRMS6453 IRMX6452 IR RxD C3=0.1 µF 1 6 VCC LED Anode C1=0.1 µF C2=10 µF 1 6 LED VCC Anode RxD GND 8 SD 5 IR SLO 68 Table 9. Recommended RO values for different VLED Figure 7. Ultra I/O controller with fast IR (FDC37C93xFR) to IRMS6453 VCC 0.1 µF 22 µF R0 Parameter Values Unit VLED power supply 2.7 3 3.3 >3.5 V Resistor 0 1.8 4.7 6.8 Ω Table 10. Slimline IRMS64XX Truth Table Inputs 1 6 LED VCC Anode 125 VCC IR TxD 99 3 TxD IRMS6453 IRMX6452 SD VCC RxD Detector High 2.4 to 5.5 V X=don’t care state X=don’t care state Low 2.4 to 5.5 V High 2.4 to 5.5 V Low FDC37C93XFR IR RxD GND GND IR MODE 130 98 19 4 Outputs RxD 2.4 to 5.5 V 2.4 to 5.5 V 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) LED Off On <0.4 µW/cm2 (115 Kb/s) High Off Low Off <1.0 µW/cm2 (1 & 4 Mb/s) 2.4 to 5.5 V SD GND 5 8 RxD Low <4.0 µW/cm2 (115 Kb/s) <10.0 µW/cm2 (1 & 4 Mb/s) IRMS6453 5 Figure 9. Reel Dimensions in Inches (mm) Table 11. Ordering Information Part Number Description PCB Mounting Orientation IRMS6453 Integrated Packaged in Transceiver Component Carrier Reel —Side View (1000/reel) for Side View Mounting on PCB Matte finish these areas 0.512+0.020 0.79 – 0 .0 0 8 (20.2) Min. 13.0 +– 0.5 0.2 X Tape Leader and Trailer is 400 mm minimum. 12.97 (330.0) Ref. 4.01 (102.0) Ref. Detail A See detail A W1 (Measured at hub) W2 (Measured at hub) 0.079±0.020 (2.0± 0.5) 16.4 mm (+2 mm/–0 mm) 22.4 mm (Max) Figure 10. Tape Dimensions in Inches (mm) 8.00 ±0.10 IRMT6453 2.00 ±.10 ø 1.50 ±.10 4.00 ±0.10 1.75 ±0.10 11.50 ±.10 24.00 +.30 _.10 5.27 .356 ±0.02 4.01 3.00 4˚ MAX 8˚ MAX 4.76 ±0.10 4.32 ±0.10 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 11.02 ±0.10 IRMS6453 6 Figure 11. IRMS6453 detail drawings with optional side view or top view mounting Dimensions in inches (mm)—All dimensions have tolerances of ±0.004” (±0.1 mm) 0.304 0.028 TYP. 0.039 TYP. TOP VIEW 1 2 3 4 5 6 7 8 0.079 0.210 0.006 0.017 0.098 0.050 0.059 RIGHT SIDE VIEW 0.206 0.120 FRONT VIEW BACK VIEW 0.163 COPLANER TO .004 0.392 0.422 © Infineon Technologies, Corp., Optoelectronic Division (formerly Siemens Microelectronics, Inc.) Printed in the United States of America. All rights reserved. The information provided is believed to be accurate and reliable. Infineon reserves the right to make changes to the product described without notice. No liability is assumed as a result of its use nor for any infringement of the rights of others. This document may contain preliminary information and is subject to change by Infineon without notice. Some of the parametric data expressed in this preliminary data sheet is considered to be functional by design. Infineon assumes no responsibility or liability for any use of the information contained herein. Nothing in this document shall operate as an express or implied license or indemnity under the intellectual property rights of Infineon or third parties. The products described in this document are not intended for use in implantation or other direct life support applications where malfunction may result in the direct physical harm or injury to persons. NO WARRANTIES OF ANY KIND, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY OF FITNESS FOR A PARTICULAR PURPOSE, ARE OFFERED IN THIS DOCUMENT. 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IRMS6453 7