MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI MKI Features IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH tSC VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C SCSOA; non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; 1200 V ± 20 V 90 62 A A 100 VCES A 10 µs 350 W • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate - UL registered, E 72873 Typical Applications td(on) tr td(off) tf Eon Eoff 1.9 2.1 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.4 V V 6.5 V 0.8 mA mA 200 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 80 50 680 30 6.0 4.0 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A 3.8 350 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved • MWI - AC drives - power supplies with power factor correction • MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger 0.35 K/W 451 IGES Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1-4 MWI 50-12 E7 MKI 50-12 E7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 110 70 Symbol Conditions Characteristic Values min. typ. max. VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.2 1.6 IRM trr IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 40 200 RthJC (per diode) Conduction A A 2.6 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 24 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 6 mΩ Thermal Response Module Symbol Conditions TVJ TVJM Tstg operating VISOL Maximum Ratings -40...+125 -40...+150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound 6 6 Weight IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.151 J/K; Rth1 = 0.483 K/W Cth2 = 1.003 J/K; Rth2 = 0.127 K/W mΩ mm mm 0.02 K/W 180 g pins 5, 6, 7, 8 and 15 for MWI only © 2004 IXYS All rights reserved 451 Dimensions in mm (1 mm = 0.0394") 2-4 pins 5, 6, 7, 8 and 15 for MWI only MWI 50-12 E7 MKI 50-12 E7 120 VGE = 17 V A 15 V 120 A 100 13 V 11 V 100 15 V VGE = 17 V 13 V 11 V IC IC 80 80 60 60 9V 9V 40 40 20 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 V 3 0 4 1 2 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 160 160 VCE = 20 V A IC V 4 3 VCE A 120 120 IF TVJ = 125°C 80 80 40 40 TVJ = 125°C TVJ = 25°C TVJ = 25°C 0 0 4 6 8 10 12 0 V 14 1 2 3 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 100 20 A V 15 300 ns trr 80 240 60 180 IRM VGE trr 10 40 5 VCE = 600 V IC = 50 A 120 TVJ = 125°C VR = 600 V IF = 60 A 20 IRM MWI5012E7 0 0 0 100 200 300 400 nC 500 0 400 600 800 A/µs 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 451 Typ. turn on gate charge 200 -di/dt QG Fig. 5 60 © 2004 IXYS All rights reserved 3-4 MWI 50-12 E7 MKI 50-12 E7 20 td(on) mJ 16 8 100 ns 90 tr 12 70 t 8 Eon 20 40 60 80 2 20 200 Eoff tf 0 100 A 120 20 40 60 IC Fig. 7 Typ. turn on energy and switching times versus collector current 15.0 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 12.5 Eon 10.0 td(on) 7.5 12 10 t Eoff 8 6 100 4 2.5 50 2 0.0 0 0 tr 5.0 0 20 40 60 80 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 150 Eon 100 Ω 120 td(off) t 600 400 Eoff 200 tf 0 20 40 60 0 100 Ω 120 80 RG Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 120 1 A diode K/W 100 ICM 1200 ns 1000 800 RG Fig. 9 0 100 A 80 IC Fig. 8 Typ. turn off energy and switching times versus collector current 300 ns 250 200 400 RG = 22 Ω TVJ = 125°C 30 0 0 VCE = 600 V VGE = ±15 V 4 10 0 600 t 60 40 RG = 22 Ω TVJ = 125°C 4 td(off) 6 Eoff 50 VCE = 600 V VGE = ±15 V ns mJ 80 Eon 800 IGBT 0.1 80 ZthJC 60 0.01 40 single pulse 0.001 RG = 22 Ω TVJ = 125°C 20 0 0 200 400 600 800 1000 1200 1400 V VCE MWI5012E7 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 451 Fig. 11 Reverse biased safe operating area RBSOA 0.0001 0.00001 0.0001 0.001 © 2004 IXYS All rights reserved 4-4