MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP.(V CE=6.0V, IC=1.0mA) High voltage: VCEO=50V Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 60 5.0 100 200 -55 to +150 -55 to +150 SOT-23 Unit V V V mA mW O C O C A D C F B E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units --- --- 0.1 uAdc OFF CHARACTERISTICS ICBO IEBO V CE(sat) V BE(SAT) V BE Cob fT DC Current Gain* (IC=1.0mAdc, VCE=6.0Vdc) Collector Saturation Voltage* (IC=100mAdc, IB =10mAdc) Base Saturation Voltage* (IC=100mAdc,IB =10mAdc) Base Emitter Voltage* (V CE=6.0Vdc, IC=1.0mAdc) Collector Capacitance (V CB=6.0Vdc, IE =0, f=1.0MHz) Gain Bandwidth product (VCE=6.0Vdc, IE =10mAdc) J K --- --- 0.1 uAdc ON CHARACTERISTICS hF H G Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) 90 200 --- 600 --- 0.15 0.3 Vdc --- 0.86 1.0 Vdc 0.55 0.62 0.65 Vdc --- 3.0 --- pF --- 250 --- MHz DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 hFE CLASSIFICATION Marking L4 L5 hFE 90-180 135-270 * Pulse Test PW<350us, duty cycle<2% L6 200-400 inches mm L7 300-600 .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30