MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2371 Features • • With TO-126 package Video applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 300 300 7.0 0.1 10 -55 to +150 -55 to +150 Unit V V V A W O C O C A K D R E B N M F G P L H C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 1 OFF CHARACTERISTICS V (BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Cutoff Current (VCB=200Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) 300 --- Vdc --- 0.1 uAdc --- 0.1 mAdc ON CHARACTERISTICS hFE V CE(sat) Forward Current Transfer ratio (IC=10mAdc, V CE=10Vdc) Collector-Emitter Saturation Voltage (IC=30mAdc, IB =3.0Adc) 40 --- 250 --- 1.5 Vdc 2 3 J J PIN 1. PIN 2. PIN 3. Q EMITTER COLLECTOR BASE ! www.mccsemi.com Revision: 2 2003/04/30