MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE CM200E3U-24F ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.25 C1 ±0.25 (8.25) 25 25 15.85 (18) G1 E1 48 CM 0.5 E2 0.5 C2 E1 4 Tc measured point 62 14 6 10.5 14 E2 G2 14 21.5 1MAX 2.5 3–M6 NUTS 4–φ6.5 MOUNTING HOLES 18 7 18 RTC 8.5 7 E2 C1 22 29 –0.5 +1.0 C2E1 LABEL E2 G2 TAB #110. t=0.5 18 CIRCUIT DIAGRAM Mar.2002 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) VRRM IF IFM Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Repetitive peak reverse voltage Forward current Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Clamp diode part TC = 25°C Pulse Ratings 1200 ±20 200 400 200 400 830 1200 200 400 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) Clamp diode part Clamp diode part (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A W V A °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) RG Rth(j-c)Q Rth(j-c)R Rth(j-c’)Q VFM Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage — — — — — — — — — — — — — — 1.6 — — — — — 1.8 1.9 — — — 2200 — — — — — 12.2 — — — — — — 40 2.4 — 78 3.4 2.0 — 300 80 500 300 200 — 3.2 16 0.15 0.18 0.091*3 3.2 µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 200A, VGE = 15V Tj = 125°C — — 200 ns — 12.2 — µC — — — 0.04 0.18 — °C/W VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V External gate resistance trr Reverse recovery time Qrr Reverse recovery charge IGBT part FWDi part Tc measured point is just under the chips IF = 200A, Clamp diode part IF = 200A VCC = 600V, VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation, Clamp diode part Rth(j-c)R Rth(c-f) Thermal resistance*1 Contact thermal resistance Clamp diode part Case to fin, Thermal compound applied*2 (1/2 module) Thermal resistance*1 Thermal resistance Forward voltage drop mA V nF nC ns ns µC V Ω °C/W V Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar.2002 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 400 9.5 Tj = 25°C VGE = 20V 350 300 15 11 250 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 9 200 8.5 150 100 8 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 3 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 0 IC = 400A IC = 200A 2 IC = 80A 1 0 6 8 10 12 14 16 18 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 3 102 7 5 3 2 1 1.5 2 2.5 3 3.5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies 7 5 Coes 100 Cres 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) CAPACITANCE Cies, Coes, Cres (nF) 2 EMITTER-COLLECTOR VOLTAGE VEC (V) 101 7 5 3 GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 400 5 101 0.5 20 102 3 2 300 FREE-WHEEL DIODE AND CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 4 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 5 100 7 td(off) 5 tf 3 2 td(on) 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar.2002 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE 103 7 5 3 2 102 Irr trr 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part & CLAMP DIODE part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF CLAMP DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: Per unit base = Rth(j–c) = 0.15°C/W 5 FWDi part: Per unit base = Rth(j–c) = 0.18°C/W 3 CLAMP Di part: Per unit base = Rth(j–c) = 0.18°C/W 2 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Mar.2002