MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H ● IC ................................................................... 800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 4 - M8 NUTS 57±0.25 2(C2) 4(E1) C2 20 E1 G1 G2 140 30 C1 E2 E2 C1 1(E2) 3(C1) E1 C2 16 40 6 - M4 NUTS CIRCUIT DIAGRAM E2 C1 G1 G2 18 6 - φ 7 MOUNTING HOLES 44 53 57 55.2 5 screwing depth min. 16.5 11.85 35 11.5 screwing depth min. 7.7 28 +20 38 +20 5 14 LABEL 31.5 CM 124±0.25 C2 E1 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Ratings Unit 1700 ±20 800 1600 800 1600 6200 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 V V A A A A W °C °C °C V 10 µs ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25°C Min — Limits Typ — Max 12 IC = 80mA, VCE = 10V, Tj = 25°C 4.5 5.5 6.5 V — — — — — — — — — — — — — — — — — — — 2.60 3.10 72 9.0 3.6 6.6 2.30 2.00 — — 350 — — 260 — 300 120 0.5 3.30 — — — — — 3.00 — 1.60 1.30 — 2.70 0.50 — 2.70 — — µA Item Conditions VGE = VGES, VCE = 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C (Note 4) IE = 800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 800A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load Unit mA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs µC mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 20.0 34.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque — CTI da ds LC-E(int) RC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part TC = 25°C Min 7.0 3.0 1.0 — 250 10.0 15.0 — — Limits Typ — — — 1.0 — — — 18 0.16 Max 13.0 6.0 2.0 — — — — — — Unit N·m kg — mm mm nH mΩ HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 Tj = 25°C VCE = 10V VGE = 15V 1400 1400 1000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VGE = 12V VGE = 20V 1200 VGE = 10V 800 600 400 1200 1000 800 600 400 VGE = 8V 200 0 1 2 3 4 5 0 6 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 12 6 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 200 5 4 3 2 1 5 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C f = 100kHz 7 5 VCC = 850V, IC = 800A Tj = 25°C GATE-EMITTER VOLTAGE (V) 3 CAPACITANCE (nF) 2 102 Cies 7 5 3 2 101 7 5 Coes 3 Cres 16 12 8 4 2 100 -1 10 5 7 100 2 3 5 7 101 2 3 0 5 7 102 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1200 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load 800 Eon 600 Eoff 400 200 Erec SWITCHING ENERGIES (mJ/pulse) SWITCHING ENERGIES (mJ/pulse) 1000 2 3 VCC = 850V, IC = 800A VGE = ±15V Tj = 125°C, Inductive load 1000 Eon 800 600 Eoff 400 200 Erec 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) 0 0 5 10 15 20 25 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 102 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load REVERSE RECOVERY TIME (µs) 100 td(off) 7 5 td(on) tf 3 2 10-1 tr 7 5 3 3 2 2 101 103 7 5 7 5 lrr 3 2 3 2 trr 100 102 7 5 7 5 3 3 3 2 2 2 7 5 10-2 1 10 2 3 5 7 102 2 3 5 7 103 2 3 10-1 1 10 5 7 104 5 7 102 2 3 5 7 103 101 2 3 5 7 104 EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 2 3 COLLECTOR CURRENT (A) 2500 VCC ≤ 1150V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 3.3Ω Single Pulse, TC = 25°C Rth(j–c)Q = 20K/kW Rth(j–c)R = 34K/kW 2000 COLLECTOR CURRENT (A) SWITCHING TIMES (µs) 2 104 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load 7 5 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.8 0.6 0.4 1500 1000 500 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005