MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC ................................................................... 800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 114±0.1 57±0.1 4 - M8 NUTS 20 –0.2 +0.1 57±0.1 3 - M4 NUTS E 140±0.5 40±0.2 C E E C E CM C C 124±0.1 C C G E E G CIRCUIT DIAGRAM 10.35±0.2 10.65±0.2 6 - φ7±0.1MOUNTING HOLES 48.8±0.3 screwing depth min. 16.5 61.5±0.3 15±0.2 40±0.3 28 +10 38 +10 LABEL 29.5±0.5 5.2±0.2 18±0.2 5±0.15 screwing depth min. 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 100°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C Ratings Unit 3300 ±20 800 1600 800 1600 9600 –40 ~ +150 –40 ~ +125 –40 ~ +125 6000 V V A A A A W °C °C °C V 10 µs ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25°C Min — Limits Typ — Max 10 IC = 80mA, VCE = 10V, Tj = 25°C 5.0 6.0 7.0 V — — — — — — — — — — — — — — — — — — — 3.30 3.60 120 12.0 3.6 5.7 2.80 2.70 — — 1.10 — — 1.05 — 540 0.60 0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.4 — — µA Item Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Conditions VGE = VGES, VCE = 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C (Note 4) IE = 800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 800A, VGE = ±15V RG(off) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load Unit mA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 8.0 Max 13.0 25.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque — CTI da ds LC-E(int) RC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C Min 7.0 3.0 1.0 — 600 19.5 32.0 — — Limits Typ — — — 1.0 — — — 18 0.20 Max 13.0 6.0 2.0 — — — — — — Unit N·m kg — mm mm nH mΩ HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 Tj = 125°C VCE = 20V 1400 VGE = 20V 1200 VGE = 15V VGE = 12V 1000 800 VGE = 10V 600 400 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 1400 1200 1000 800 600 400 VGE =8 V 200 0 1 2 3 4 5 0 6 Tj = 25°C Tj = 125°C 0 2 4 6 10 8 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 12 6 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 200 5 4 3 2 1 5 4 3 2 1 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) 0 0 400 800 1200 1600 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C f = 100kHz 7 5 VCC = 1650V, IC = 800A Tj = 25°C CAPACITANCE (nF) 2 GATE-EMITTER VOLTAGE (V) 3 Cies 102 7 5 3 2 101 Coes 7 5 3 16 12 8 4 Cres 2 100 -1 10 5 7 100 2 3 5 7 101 2 3 0 5 7 102 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 4 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load VCC = 1650V, IC = 800A VGE = ±15V Tj = 125°C, Inductive load Eon 2 1.5 Eoff 1 Erec 0.5 SWITCHING ENERGIES (J/pulse) SWITCHING ENERGIES (J/pulse) 2.5 2 3 Eon 3 2 Eoff 1 Erec 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) 0 0 5 10 15 20 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 102 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load 7 5 REVERSE RECOVERY TIME (µs) 3 SWITCHING TIMES (µs) 2 101 7 5 3 td(off) 2 td(on) 100 7 5 tr 3 tf 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT (A) 3 104 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load 7 5 3 2 2 101 103 7 5 7 5 lrr 3 3 2 2 100 102 7 5 7 5 trr 3 3 2 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 2 3 5 7 104 EMITTER CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 1.0 Single Pulse, TC = 25°C Rth(j–c)Q = 13K/kW Rth(j–c)R = 25K/kW 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 2500 2500 REVERSE RECOVERY CURRENT (A) VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 2.5Ω COLLECTOR CURRENT (A) 2000 1500 1000 500 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) VCC ≤ 2200V, di/dt ≤ 3600A/µs Tj = 125°C 2000 1500 1000 500 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005