RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Three package configurations (P, FP, and KP) ● Medium breakdown voltage (BVCEO ≥ 35V) ● Synchronizing current (IC(max) = 300mA) ● With clamping diodes ● Low output saturation voltage ● Wide operating temperature range (Ta = –40 to +85°C) ● IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND 9 10 NC FUNCTION The M63817P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. →COM COMMOM Package type 18P4G(P) 20 1 IN1→ 2 APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals OUTPUT INPUT NC 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 GND OUTPUT 11 →COM 10 COMMOM NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM COM OUTPUT INPUT 10.5k 10k GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63817P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol V CEO IC (Unless otherwise noted, Ta = –40 ~ +85 °C) Parameter Conditions Collector-emitter voltage Output, H Current per circuit output, L VI Collector current Input voltage IF VR Clamping diode forward current Clamping diode reverse voltage M63817P Pd Topr T stg Ta = 25°C, when mounted on board Power dissipation M63817FP M63817KP Operating temperature Storage temperature Ratings –0.5 ~ +35 Unit V 300 –0.5 ~ +35 mA V 300 mA 35 1.79 V 1.10 0.68 W –40 ~ +85 –55 ~ +125 °C °C RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO IC Parameter Test conditions Output voltage Collector current M63817P (Current per 1 circuit when 8 circuits M63817FP are coming on simultaneously) VIN M63817KP Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Input voltage Limits min typ max 0 0 0 — — — 35 250 170 0 0 0 — — — 250 130 250 0 0 — — 100 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter V (BR) CEO VCE(sat) VIN(on) VF IR h FE Test conditions Limits Collector-emitter breakdown voltage min 35 typ — max — DC amplification factor — — 7.5 — — 50 — — 11.0 1.2 — — 0.2 0.8 15.0 2.0 10 — ICEO = 10µA IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA “On” input voltage IIN = 1mA, IC = 10mA Clamping diode forward volltage IF = 250mA Clamping diode reverse current VR = 35V VCE = 10V, IC = 10mA Unit V V V V µA — SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time Test conditions CL = 15pF (note 1) Limits min — typ 120 max — — 240 — Unit ns ns Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63817P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM NOTE 1 TEST CIRCUIT Vo INPUT 50% Measured device 50% INPUT RL OPEN PG OUTPUT OUTPUT 50Ω 50% 50% CL ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V (2)Input-output conditions : RL = 220Ω, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Input Characteristics Thermal Derating Factor Characteristics 4 2.0 Ta = –40°C 1.5 Input current II (mA) Power dissipation Pd (W) M63817P M63817FP 1.0 0.931 M63817KP 0.572 0.5 Ta = 25°C 2 Ta = 85°C 1 0.354 0 0 25 50 75 85 0 100 0 10 15 20 25 Duty Cycle-Collector Characteristics (M63817P) Duty Cycle-Collector Characteristics (M63817P) 30 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) 1~5 6 7 8 200 0 5 Input voltage VI (V) 300 100 0 Ambient temperature Ta (°C) 400 Collector current Ic (mA) 3 300 1~3 4 5 6 7 8 200 100 0 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 20 40 60 80 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63817P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63817FP) Duty Cycle-Collector Characteristics (M63817FP) 400 1~3 4 5 6 7 8 300 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 0 20 40 60 100 80 Duty Cycle-Collector Characteristics (M63817KP) Duty Cycle-Collector Characteristics (M63817KP) 400 1~2 300 3 4 200 5 6 7 8 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 Duty cycle (%) 3 4 5 67 8 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 20 40 60 80 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics Output Saturation Voltage Collector Current Characteristics 100 100 Ta = 25°C VI = 28V IB = 2mA IB = 1.5mA IB = 1mA 100 IB = 0.5mA 50 0.2 0.4 0.6 Output saturation voltage VCE(sat) (V) 0.8 Collector current Ic (mA) IB = 3mA 150 0 0 2 200 Duty cycle (%) Ta = 25°C 200 1 300 0 100 250 Collector current Ic (mA) 4 5 67 8 Duty cycle (%) 400 0 3 200 0 100 1 2 300 80 VI = 24V VI = 20V VI = 16V 60 VI = 12V VI = 8V 40 20 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63817P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Output Saturation Voltage Collector Current Characteristics DC Amplification Factor Collector Current Characteristics 103 100 DC amplification factor hFE Collector current Ic (mA) II = 2mA 80 Ta = –40°C Ta = 25°C Ta = 85°C 60 40 20 0 0 0.05 0.10 0.15 7 5 VCE 10V Ta = 25°C 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 0.20 Output saturation voltage VCE(sat) (V) Collector current Ic (mA) Grounded Emitter Transfer Characteristics Grounded Emitter Transfer Characteristics 50 250 VCE = 4V VCE = 4V 40 30 Ta = 85°C Collector current Ic (mA) Collector current Ic (mA) Ta = 85°C Ta = –40°C 20 Ta = 25°C 10 0 0 1.0 2.0 3.0 4.0 5.0 Input voltage VI (V) 200 150 Ta = 25°C 100 Ta = –40°C 50 0 0 4 8 12 16 20 Input voltage VI (V) Clamping Diode Characteristics Forward bisa current IF (mA) 250 200 150 Ta = 85°C 100 50 0 0 Ta = 25°C 0.4 Ta = –40°C 0.8 1.2 1.6 2.0 Forward bias voltage VF (V) Jan. 2000