MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63832GP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DESCRIPTION The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● 3V micro computer compatible input ● “L” active level input ● With input diode ● Wide operating temperature range (Ta = –40 to +85°C) INPUT IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 VCC OUTPUT 16P2S-A(GP) Package type 16P2Z-A(KP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM VCC FUNCTION The M63832GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 7 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. ABSOLUTE MAXIMUM RATINGS Parameter 20K INPUT OUTPUT 3.5K 1.05K 7.2K 3K GND The seven circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VCC Supply voltage Conditions VCEO IC VI Collector-emitter voltage Collector current Input voltage Output, H Current per circuit output, L Pd Topr Tstg Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings 7 –0.5 ~ +50 500 –0.5 ~ VCC 0.80(FP)/0.78(KP) –40 ~ +85 –55 ~ +125 Unit V V mA V W °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63832GP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY RECOMMENDED OPERATING CONDITIONS Symbol Limits Parameter VCC Supply voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH VIL (Unless otherwise noted, Ta = –40 ~ +85°C) Duty Cycle GP/KP : no more than 2% min 2.7 typ max 3.0 3.6 0 — 400 Unit V mA Duty Cycle GP/KP : no more than 10% 0 VCC-0.5 “H” input voltage “L” input voltage 0 — 200 — — VCC-2.2 VCC V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Limits Test conditions min 50 — — — — 2000 Collector-emitter breakdown voltage ICEO = 100µA VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C typ ✽ — 1.15 0.93 –220 2.6 10000 Unit max — 2.4 1.6 –600 4.0 — V V µA mA — ✽ : Typical values are at Ta = 25°C SWITCHING CHARACTERISTICS Symbol ton Parameter Turn-on time Turn-off time toff (Unless otherwise noted, Ta = 25°C) CL = 15pF (note 1) min — typ 120 max — — 4500 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC VO INPUT Measured device 50% 50% RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63832GP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 M63832GP 0.8 Collector current Ic (mA) Power dissipation Pd(max) (W) 1.0 0.78 M63832KP 0.6 0.416 0.406 0.4 0.2 0 0 25 75 85 50 400 300 200 Ta= 25°C 100 0 100 Vcc=2.7V VI=0.5V Ta=85°C 0 Duty Cycle-Collector Characteristics (M63832GP/KP) 500 1 300 2 200 3 4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 0 300 2.0 1 200 2 3 4 5 76 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) DC Amplification Factor Collector Current Characteristics Output Current Characteristics 100 500 10 VCE=2V VCE=2V 3 2 Ta= 85°C 104 7 5 3 2 Ta= –40°C 3 10 7 5 Ta= 25°C 3 2 102 1 10 2 3 5 7 102 2 3 Collector current IC (mA) 5 7 103 Collector current IC (mA) DC amplification factor hFE 1.5 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneouslyoperated circuit. •Vcc = 3V •Ta = 85°C 400 0 100 5 7 5 1.0 Duty Cycle-Collector Characteristics (M63832GP/KP) 500 0 0.5 Output saturation voltage VCE(sat) (V) Ambient temperature Ta (°C) 100 Ta= –20°C 400 Ta= 85°C 300 Ta= 25°C 200 Ta= –40°C 100 0 0 0.4 0.8 1.2 1.6 2.0 Input voltage Vcc-VI (V) Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63832GP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY Driver Supply Characteristics Input Characteristics –0.6 20.0 VI=0.5V VCC=3V Supply Current Icc (mA) Input Current II (mA) –0.5 –0.4 –0.3 Ta=85°C –0.2 Ta=25°C –0.1 16.0 12.0 Ta=25°C Ta=–40°C 8.0 4.0 Ta=85°C Ta=–40°C 0 0 1 2 Input voltage Vcc-VI (V) 3 0 0 2 4 6 8 10 Supply voltage Vcc (V) Sep. 2001