MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Unit: millimeters (inches) 24+/-0.3 R1.25 (1) 0.6+/-0.15 FEATURES 2MIN Internally matched to 50 ohm system High output power P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz High power gain GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=6.4 - 7.2 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=29 dBm S.C.L. R1.2 (2) 15.8 8.0+/-0.2 17.4+/-0.3 (3) 2MIN 20.4+/-0.2 APPLICATION 13.4 item 01 : 6.4 - 7.2 GHz band power amplifier item 51 : 6.4 - 7.2 GHz band digital radio communication 0.1 2.4+/-0.2 QUALITY GRADE 4.0+/-0.4 IG 1.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 2.4 (A) Rg=50 (ohm) (1): GATE (2): SOURCE (FLANGE) (3): DRAIN GF-18 Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit < Keep safety first in your circuit designs! > VGDO Gate to drain voltage -15 V Mitsubishi Electric Corporation puts the maximum effort into VGSO Gate to source voltage -15 V making semiconductor products better and more reliable, Drain current 7.5 A but there is always the possibility that trouble may occur IGR Reverse gate current -20 mA with them. Trouble with semiconductors may lead to personal IGF Forward gate current 42 mA injury, fire or property damage. Remember to give due PT Total power dissipation 42.8 W Tch Channel temperature 175 deg.C with appropriate measures such as (1)placement of Tstg Storage temperature -65 / +175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable ID consideration to safety when making your circuit designs, *1 : Tc=25 Deg.C material or (3)prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS Symbol IDSS Gm VGS(off) P1dB GLP ID PAE IM3 Parameter Limits Test conditions Unit Min Typ Max Saturated drain current VDS = 3V , VGS = 0V - 4.5 6 Transconductance VDS = 3V , ID = 2.2A - 2 - S VDS = 3V , ID = 40mA -2 -3 -4 V 39.5 40.5 - dBm 7 9 - dB Drain current - 2.4 - A Power added efficiency - 32 - % -42 -45 - dBc - - 3.5 Deg.C/W Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain 3rd order IM distortion Rth(ch-c) Thermal resistance VDS=10V, ID(RF off)=2.4A, f=6.4-7.2GHz *1 *2 Delta Vf method A *1 : item -51,2 tone test,Po=29.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004