MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ∼ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION FEATURES OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ∼ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. 2.4 15.8 (2) (3) 2MIN. 17.4+/-0.2 8.0+/-0.2 (1) Class A operation Internally matched to 50(ohm) system High output power P1dB = 46.7dBm (TYP.) @ f=7.7∼8.5GHz High power gain GLP = 5.7 dB (TYP.) @ f=7.7∼8.5GHz High power added efficiency P.A.E. = 30 % (TYP.) @ f=7.7∼8.5GHz 0.7+/-0.15 4.7 m a x. 16.7 1.3 2.3+/-0.2 Solid-state power amplifier for satellite earth-station communication transmitter and VSAT 0.1+/-0.05 20.4+/-0.2 APPLICATION RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 9.8 (A) RG= 10 (ohm) GF-53 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage IGR Reverse gate current IGF Forward gate current PT Total power dissipation *1 Tch Channel temperature Tstg Storage temperature *1 : Tc=25 deg.C ELECTRICAL CHARACTERISTICS Symbol (1) : Gate (2) : Source (3) : Drain Parameter (Ta=25 deg.C) Ratings -20 -10 -130 168 168 175 -65 / +175 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. Unit V V mA mA W deg.C deg.C (Ta=25 deg.C) Test conditions VGS(off) Pinch-off voltage VDS=3V, ID=168mA P1dB Output power at 1dB gain compression GLP Linear power gain VDS=10V, ID(RF off)=9.8A, f=7.7~8.5GHz ID Drain current P.A.E. Power added efficiency IM3 3rd order IM distortion *1 Rth(ch-c) Thermal resistance *2 Delta Vf method *1 : item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC Min. -1 45.7 4.7 -39 - Limits Typ. 46.7 5.7 11 30 -42 0.8 Max. -4 0.9 Unit V dBm dB A % dBc deg.C/W June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ∼ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004