MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP DFB LASER DIODES Notice : Some parametric limits are subject to change TYPE NAME ML925B11F / ML920J11S ML925AA11F / ML920AA11S ML925J11F / ML920L11S DESCRIPTION APPLICATION ML9XX11series are DFB (Distributed Feedback) laser diodes emitting light beam around 1550nm. They are well suited for light source in long distance digital transmission system. They are hermetically sealed devices with the photo diode for optical output monitoring. · ~1.25Gbps digital transmission system FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( -40 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · φ5.6mm TO-CAN package · Flat window cap, Ball lens cap, or Aspherical lens cap ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ----------- Ratings 10 150 2 20 2 -40 to +85 --- -40 to +100 Unit mW mA V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap ; ML925B11F / ML920J11S ] Symbol Ith Parameter Threshold current Iop Operation current Vop η λp θ // Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) θ┴ SMSR tr,tf Im Id Ct Side mode suppression ratio Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= - 40 to +85ºC Ib=Ith, 20-80% <*> CW, Po=5mW VRD=5V VRD=5V MITSUBISHI ELECTRIC Min. ----------0.20 1530 --- Typ. 8 30 25 60 1.1 0.28 1550 25 Max. 15 50 40 80 1.5 --1570 35 Unit V mW/mA nm deg. --- 35 45 deg. 35 40 --- dB mA mA --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF <*> Except influence of the 18mm lead. Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [Ball lens cap ; ML925AA11F / ML920AA11S ] Symbol Ith Parameter Threshold current Iop Operation current Vop η λp Operating voltage Slope efficiency Peak wavelength SMSR Pf Df tr,tf Im Id Ct Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions Min. Typ. Max. Unit CW --8 15 mA --30 50 CW, Tc=85ºC CW, Po=5mW --25 40 mA --60 80 CW, Po=5mW, Tc=85ºC CW, Po=5mW --1.1 1.5 V CW, Po=5mW 0.20 0.28 --mW/mA CW, Po=5mW 1530 1550 1570 nm CW, Po=5mW 35 40 --dB Tc= - 40 to +85ºC CW, Po=5mW, SMF 0.5 1.0 --mW CW, Po=5mW, SMF 6.0 6.5 7.0 mm Ib=Ith, 20-80% <*> --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF <*> Except influence of the 18mm lead. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Aspherical lens cap ; ML925J11F / ML920L11S] Symbol Ith Parameter Threshold current Iop Operation current Vop η λp Operating voltage Slope efficiency Peak wavelength SMSR Pf Df tr,tf Im Id Ct Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions Min. ----------0.20 1530 Typ. 8 30 25 60 1.1 0.28 1550 Max. 15 50 40 80 1.5 --1570 Unit CW mA CW, Tc=85ºC CW, Po=5mW mA CW, Po=5mW, Tc=85ºC CW, Po=5mW V CW, Po=5mW mW/mA CW, Po=5mW nm CW, Po=5mW 35 40 --dB Tc= - 40 to +85ºC CW, Po=5mW, SMF 1.5 2.0 --mW CW, Po=5mW, SMF 6.5 7.5 8.5 mm Ib=Ith, 20-80% <*> --0.1 0.2 ns CW, Po=5mW 0.05 0.2 --mA VRD=5V ----0.1 µA VRD=5V --10 20 pF <*> Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP DFB LASER DIODES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimension : mm ML925B11F ML920J11S +0 (3) φ5.6 -0.03 φ4.25 Case LD Ｙ (1) (0.25) (2) 2-90° (3) PD (2) (4) Ｘ (0.25) (1) (4) ML925B11F 1±0.1 (3) (Glass) 0.25 ±0.03 φ3.55±0.1 φ2.0Min. 1.27 ±0.0 3 2.1±0.1 5 Facet Reference Plane (1) (2) PD 1.2 Emitting (4) 18 ±1 ML920J11S φ2.0 ±0.25 (P.C.D.) 4-φ0.45 ±0.05 (1) Pin Connection ( Top view ) (2) Dimension : mm ML925AA11F ML920AA11S φ5.6 -0.03 (3) φ4.25 (Dimension:mm) (0.25) Case LD Ｙ (1) (2) 2-90° (3) (1) (2) (4) PD Ｘ (4) (0.25) ±0.1 Case LD φ1.0Min. ML925AA11F 1±0.1 (3) φ3.55±0.1 φ2.0±0.01 Case 1.27 ±0.03 3.87 ±0.1 (3.0) (1) (2) Emitting Facet PD Reference Plane (4) 1.2 (6.7) LD 18 ±1 ML920AA11S φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 (1) Pin Connection ( Top view ) (2) MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP DFB LASER DIODES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimension : mm ML925J11F ML920L11S (3) +0 φ5.6 -0.03 Case LD φ4.3 Ｙ (1) (0.25) (2) Top View (3) (2) (4) Ｘ (0.25) 2-90° PD (1) (4) ML925J11F 1±0.1 (3) φ3.75±0.1 Ｚ Case 18 ±1 ±0.1 1.27 ±0.03 3.97 ±0.15 Emitting Facet (1) (2) Reference Plane 1.2 (7.51) LD PD (4) φ2.0±0.25 (P.C.D.) ML920L11S 4-φ0.45±0.05 (1) (2) MITSUBISHI ELECTRIC Pin Connection ( Top view ) Dec. 2004