MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15 RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. DRAWING 2 3.5+/-0.05 OUTLINE DESCRIPTION FEATURES APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 INDEX MARK (Gate) (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD02MUS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD02MUS2 MITSUBISHI ELECTRIC 1/9 17 Jan. 2006 (0.22) 3 (0.25) 0.2+/-0.05 •High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •High Efficiency:65%typ.(175MHz) •High Efficiency:65%typ.(520MHz) •Integrated gate protection diode MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resisitance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 -5/+10 21.9 0.1 1.5 150 -40 to +125 5.7 UNIT V V W W A D G °C °C °C/W SCHEMATIC S DRAWING Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout1 ηD1 Pout2 ηD2 Zero gate Voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f=175MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(Pin Control) f=520MHz,Idq=200mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1 2 55 2 50 LIMITS TYP MAX. 100 1 1.8 3 3 65 3 65 - UNIT uA uA V W % W % - No destroy No destroy Note : Above parameters , ratings , limits and conditions are subject to change. RD02MUS2 MITSUBISHI ELECTRIC 2/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) 20 4 15 On PCB(*1) with Heat-sink 10 3 2 5 1 On PCB(*1) 0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS 5.0 4.5 4.0 3.5 3.0 Vgs=10V Vgs=9V Vgs=8V Vgs=7V Ta=+25°C Vgs=5V 2.5 2.0 1.5 1.0 0.5 0.0 8 10 30 20 10 Vgs=3V 4 6 Vds(V) 8 Ta=+25°C f=1MHz Vgs=4V 2 4 6 Vgs(V) 40 Vgs=6V 0 2 Vds VS. Ciss CHARACTERISTICS Ciss(pF) Ids(A) Ta=+25°C Vds=7.2V 5 Ids(A) CHANNEL DISSIPATION Pch(W) 25 Vgs-Ids CHARACTERISTICS 6 0 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 40 6 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 5 Crss(pF) Coss(pF) 30 20 4 3 2 10 1 0 0 0 RD02MUS2 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 3/9 5 10 Vds(V) 15 20 17 Jan. 2006 MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Pin-Po CHARACTERISTICS @f=175MHz 80 ηｄ 70 20 60 50 15 Ta=+25°C f=175MHz Vdd=7.2V Idq=200mA 5 0 -10 -5 0 5 10 Pin(dBm) 15 40 ηd 2.0 1.0 Idd 0.0 20 0 20 20 60 15 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=200mA 5 0 -5 0 5 10 Pin(dBm) 15 40 Pout(W) , Idd(A) 70 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 80 ηｄ 10 1.0 4 Idd 3 60 40 20 40 60 Pin(mW) 80 20 100 Vdd-Po CHARACTERISTICS @f=520MHz 1.4 7 1.2 6 1.0 5 0.8 4 0.6 Ta=25°C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po 1.2 1.0 0.8 Idd 3 0.6 2 0.4 2 0.4 1 0.2 1 0.2 0.0 0 0 2 RD02MUS2 Ta=25°C f=520MHz Vdd=7.2V Idq=200mA Idd 0 Po(W) Po(W) 5 ηd 0.0 20 Idd(A) 6 80 30 1.4 Po 20 100 100 2.0 Vdd-Po CHARACTERISTICS @f=175MHz Ta=25°C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm 80 3.0 20 7 40 60 Pin(mW) Po 90 Gp -10 20 4.0 100 Po 25 40 Pin-Po CHARACTERISTICS @f=520MHz 40 30 60 30 Pin-Po CHARACTERISTICS @f=520MHz 35 Ta=25°C f=175MHz Vdd=7.2V Idq=200mA 4 6 8 Vdd(V) 10 12 ηd(%) 10 80 3.0 Idd(A) Gp 25 Pout(W) , Idd(A) 30 90 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 35 Po ηd(%) Po 100 4.0 100 40 0.0 2 4 MITSUBISHI ELECTRIC 4/9 6 8 Vdd(V) 10 12 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 4 Vds=10V Tc=-25~+75°C Ids(A),GM(S) 3 +25°C -25°C +75°C 2 1 0 2 RD02MUS2 3 4 Vgs(V) 5 6 MITSUBISHI ELECTRIC 5/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TEST CIRCUIT(f=175MHz) Vdd Vgg C1 19m m 3m m 33m m 5m m 62pF 6.5m m 12m m L1 15m m RD02MUS2 R D 02MVS1 175MHz 4.7kO HM RF-IN 10uF,50V C2 10pF 13.5m m 12m m 5m m RF-O UT 5m m 3m m 3m m 11.5m m 68O HM 39pF L3 62pF L2 43pF 10pF 240pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D L2: Enam eled wire 3Turns,D :0.43m m ,2.46m m O .D L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m C 1,C 2:1000pF,0.0022uF in parallel TEST CIRCUIT(f=520MHz) V gg Vdd C1 C2 19m m 19m m 4.7kO HM 26.5m m 20m m 2m m 10uF,50V 10m m RRD02MUS2 D 02MUS 1 L1 520MHz 4.5m m 3m m RF-IN 40.5m m R F-OUT 11m m 62pF 6pF 43pF 62pF 68O HM 18pF 240pF L1: Enam eled wire 9Turns,D :0.43m m ,2.46m m O .D C1,C 2:1000pF,0.022uF in parallel RD02MUS2 Note:Board m aterial-Teflon substrate Micro strip line width=2.2m m /50OHM,er:2.7,t=0.8m m MITSUBISHI ELECTRIC 6/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5.56+j1.31 520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zout* RD02MUS2 MITSUBISHI ELECTRIC 7/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=200mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.827 0.819 0.816 0.813 0.819 0.823 0.832 0.836 0.841 0.851 0.854 0.857 0.864 0.869 0.878 0.882 0.888 0.893 0.894 0.899 0.903 0.907 0.909 (ang) -137.1 -151.1 -155.3 -158.5 -163.4 -166.9 -169.4 -171.5 -173.2 -174.9 -175.5 -176.4 -177.7 -179.1 179.6 178.7 177.6 176.4 175.5 174.7 173.8 172.9 172.1 S21 (mag) (ang) 16.666 99.9 11.358 88.9 9.733 84.7 8.455 81.1 6.704 74.4 5.469 68.6 4.593 63.6 3.904 58.8 3.362 54.3 2.941 50.1 2.793 48.5 2.572 46.2 2.298 42.8 2.041 39.1 1.836 35.8 1.652 32.9 1.490 30.1 1.357 27.1 1.232 24.9 1.131 22.8 1.043 20.2 0.957 18.5 0.882 16.3 S12 (mag) 0.038 0.039 0.039 0.040 0.037 0.036 0.036 0.034 0.033 0.032 0.032 0.031 0.028 0.028 0.026 0.024 0.023 0.022 0.019 0.019 0.017 0.016 0.015 S22 (ang) 10.7 1.0 -3.4 -5.7 -12.7 -17.0 -22.1 -26.4 -29.9 -33.6 -34.5 -35.7 -39.1 -41.1 -43.6 -46.5 -49.7 -54.7 -52.1 -54.9 -55.3 -56.1 -54.1 (mag) 0.571 0.561 0.565 0.573 0.586 0.604 0.626 0.646 0.669 0.690 0.697 0.710 0.732 0.745 0.762 0.779 0.788 0.802 0.813 0.823 0.835 0.844 0.853 (ang) -126.8 -139.9 -143.5 -146.3 -149.9 -152.6 -154.8 -156.6 -158.2 -159.6 -160.2 -161.1 -162.5 -163.7 -165.3 -166.5 -167.9 -168.9 -170.0 -171.3 -172.0 -173.1 -173.9 RD02MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=200mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD02MUS2 S11 (mag) 0.844 0.832 0.829 0.830 0.832 0.836 0.841 0.849 0.853 0.861 0.859 0.865 0.869 0.877 0.881 0.890 0.894 0.897 0.902 0.905 0.910 0.913 0.914 (ang) -132.5 -147.7 -152.5 -156.2 -161.5 -165.3 -168.3 -170.6 -172.8 -174.6 -175.3 -176.1 -177.5 -178.9 179.9 178.9 177.9 176.6 175.7 174.7 174.0 173.1 172.4 S21 (mag) (ang) 17.379 102.5 11.947 91.0 10.288 86.5 8.975 82.5 7.098 75.9 5.821 70.1 4.863 64.7 4.167 59.9 3.597 55.1 3.139 50.9 2.965 49.2 2.759 46.9 2.440 43.3 2.179 39.7 1.958 36.7 1.772 33.5 1.597 30.8 1.448 28.2 1.331 25.4 1.212 23.3 1.110 20.8 1.026 18.8 0.953 16.7 S12 (mag) 0.037 0.037 0.037 0.037 0.037 0.036 0.034 0.034 0.032 0.030 0.030 0.028 0.028 0.026 0.024 0.023 0.022 0.020 0.018 0.018 0.017 0.015 0.014 MITSUBISHI ELECTRIC 8/9 S22 (ang) 12.8 2.1 -1.8 -4.7 -12.5 -17.0 -21.0 -25.3 -28.8 -31.6 -34.7 -35.4 -39.0 -41.6 -43.3 -46.6 -47.9 -48.2 -48.2 -50.7 -52.3 -55.2 -56.5 (mag) 0.541 0.533 0.538 0.541 0.559 0.578 0.601 0.624 0.648 0.669 0.677 0.691 0.710 0.729 0.745 0.765 0.777 0.790 0.800 0.814 0.825 0.834 0.843 (ang) -122.6 -136.2 -140.2 -143.1 -147.2 -149.8 -151.9 -153.9 -155.3 -156.9 -157.6 -158.3 -159.9 -161.4 -162.9 -164.2 -165.4 -166.8 -167.9 -169.2 -170.3 -171.4 -172.1 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD02MUS2 MITSUBISHI ELECTRIC 9/9 17 Jan. 2006