MITSUBISHI RD05MMP1

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD05MMP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
(a)
OUTLINE DRAWING
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
7.0+/-0.2
0.2+/-0.05
(4.5)
INDEX MARK
[Gate]
4.2+/-0.2
5.6+/-0.2
(d)
2.6+/-0.2
0.95+/-0.2
(c)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1.8+/-0.1
DETAIL A
0.7+/-0.1
•High power gain:
Pout>5.5W, Gp>[email protected]=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
6.2+/-0.2
(3.6)
8.0+/-0.2
FEATURES
(b)
(b)
0.65+/-0.2
DESCRIPTION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
941MHz band mobile radio sets.
Standoff = max 0.05
APPLICATION
SIDE VIEW
RoHS COMPLIANT
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
Junction to case
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
IDSS
IGSS
VTH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
VSWRT Load VSWR tolerance
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=941MHz , VDD=7.2V
Pin=0.7W,Idq=1.0A
VDD=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
MIN
0.5
5.5
43
LIMITS
TYP MAX.
10
1
2.5
6
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD05MMP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD05MMP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
CHANNEL DISSIPATION Pch(W
60
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
50
6
Ids(A),gm(S)
40
30
On PCB with Termal sheet
and Heat-sink
20
4
GM
2
10
0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
Vds-Ids CHARACTERISTICS
Vgs=4.5V
5
120
5
Vgs=4.0V
4
3
Ciss(pF)
6
Ids(A)
4
Ta=+25°C
f=1MHz
140
7
100
80
60
Vgs=3.5V
40
2
1
20
Vgs=3.0V
0
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
0
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
20
160
Ta=+25°C
f=1MHz
140
Ta=+25°C
f=1MHz
18
16
120
14
100
Crss(pF)
Coss(pF)
2
3
Vgs(V)
160
Vgs=5.0V
Ta=+25°C
8
1
Vds VS. Ciss CHARACTERISTICS
9
80
60
12
10
8
6
40
4
20
2
0
0
0
RD05MMP1
Ids
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
2/7
5
10
Vds(V)
15
20
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD05MMP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
Pin-Po CHARACTERISTICS @f=941MHz
80
20
ηd
20
40
Gp
Pout(W) , Idd(A)
15
60
30
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
Ta=25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
80
Po
10
30
20
5
Idd
0
5
10
15
20
25
Pin(dBm)
30
0.0
1.0
Pin(W)
Vgs-Ids CHARACTORISTICS 2
8
5
10
Ta=25°C
f=941MHz
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
Po
4
4
2
Idd
+75°C
6
Ids(A),gm(S)
3
6
+25°C
-25°C
Vds=10V
Tc=-25~+75°C
Idd(A)
Po(W)
0.5
10
0
1.5
0
35
Vdd-Po CHARACTERISTICS @f=941MHz
8
40
Po
Idd
0
60
ηd
50
20
10
70
ηd(%)
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
40
4
2
2
1
0
0
4
RD05MMP1
6
8
Vdd(V)
10
12
0
0
1
2
3
4
5
Vgs(V)
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD05MMP1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
Vdd
C1
C2
4.7k Ohm
27.5mm
12pF
7.5mm
22uF,50V
19mm W
W 19mm
RD05MMP1
941MHz
10pF
L1
1.5mm
RF-in
1.0mm 1.0mm 1.0mm
13mm
23.0mm
RF-out
120pF
120pF
6pF
10pF
12pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
7pF
4pF
L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter)
C1,C2:100pF,1000pF in parallel
W:Line width=1.0mm
RD05MMP1
MITSUBISHI ELECTRIC
4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
RD05MMP1
S11
(mag)
0.841
0.845
0.846
0.848
0.848
0.852
0.858
0.861
0.866
0.872
0.877
0.878
0.880
0.886
0.891
0.897
0.900
0.904
0.905
0.907
0.913
0.918
0.920
0.920
0.925
0.925
0.927
0.931
0.929
0.936
0.936
0.935
0.935
0.933
0.938
0.943
0.943
S21
(ang)
-169.5
-171.5
-172.4
-173.3
-173.7
-174.5
-174.9
-175.2
-175.3
-175.5
-175.5
-176.2
-176.6
-177.1
-177.2
-177.2
-177.3
-177.6
-178.1
-178.6
-178.9
-178.9
-178.9
-179.1
-179.5
179.8
179.5
179.2
179.3
179.2
179.0
178.5
178.1
177.9
177.8
177.8
177.5
(mag)
7.706
6.148
5.024
4.240
3.669
3.227
2.856
2.543
2.279
2.068
1.886
1.735
1.584
1.456
1.343
1.249
1.164
1.086
1.010
0.945
0.889
0.833
0.786
0.741
0.698
0.660
0.625
0.595
0.565
0.537
0.513
0.488
0.469
0.446
0.426
0.404
0.388
S12
(ang)
82.9
78.7
75.0
72.0
69.4
66.5
63.6
60.8
58.6
56.5
54.1
51.5
49.3
47.4
45.9
44.1
42.2
40.3
38.7
37.2
35.8
34.6
33.2
31.9
30.6
29.4
28.3
27.1
26.3
25.4
24.6
23.6
22.6
21.7
20.3
20.3
19.9
(mag)
0.020
0.020
0.019
0.018
0.017
0.017
0.017
0.016
0.015
0.014
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.015
0.016
0.017
0.019
0.020
0.023
0.024
0.019
0.019
S22
(ang)
-3.4
-5.0
-6.5
-6.6
-7.1
-8.5
-8.9
-8.7
-8.2
-3.2
-4.3
-3.6
-0.8
2.0
7.3
10.5
16.6
19.9
25.6
30.6
35.9
40.4
46.3
49.2
51.0
57.5
58.5
60.4
62.2
67.1
67.9
68.4
67.0
64.2
52.9
51.8
61.8
MITSUBISHI ELECTRIC
5/7
(mag)
0.806
0.817
0.810
0.817
0.822
0.835
0.841
0.838
0.840
0.849
0.858
0.868
0.869
0.868
0.874
0.880
0.886
0.893
0.893
0.897
0.901
0.908
0.911
0.909
0.915
0.916
0.917
0.921
0.925
0.924
0.923
0.921
0.922
0.919
0.906
0.920
0.933
(ang)
-171.5
-172.9
-174.2
-174.7
-175.0
-175.1
-175.3
-175.8
-176.2
-176.4
-176.8
-177.0
-177.4
-177.5
-177.8
-178.2
-178.7
-179.1
-179.0
-179.4
-179.9
179.6
179.2
179.0
178.6
178.4
177.9
177.4
177.0
176.7
176.6
176.3
175.5
175.0
175.4
176.6
176.0
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
RD05MMP1
S11
(mag)
0.878
0.884
0.880
0.877
0.879
0.888
0.888
0.884
0.884
0.891
0.893
0.897
0.897
0.896
0.902
0.903
0.906
0.905
0.906
0.910
0.914
0.915
0.916
0.917
0.919
0.921
0.925
0.924
0.926
0.927
0.929
0.929
0.931
0.930
0.928
0.932
0.937
S21
(ang)
-174.2
-175.6
-176.9
-177.4
-177.7
-178.2
-178.7
-179.1
-179.2
-179.6
-179.7
179.8
179.7
179.6
179.3
178.9
178.7
178.5
178.4
178.2
177.9
177.5
177.3
177.3
177.2
176.9
176.6
176.5
176.3
176.1
175.8
175.6
175.5
175.2
175.2
174.8
174.8
(mag)
7.474
6.046
4.919
4.153
3.636
3.246
2.912
2.598
2.351
2.152
1.995
1.849
1.708
1.580
1.475
1.388
1.308
1.222
1.152
1.086
1.030
0.978
0.928
0.877
0.832
0.798
0.759
0.725
0.694
0.661
0.634
0.611
0.585
0.562
0.539
0.518
0.496
S12
(ang)
85.7
81.9
78.9
77.5
76.1
73.8
71.1
69.0
67.4
66.0
64.1
62.2
60.0
58.5
57.1
55.6
53.7
52.1
50.6
49.4
48.2
46.6
45.1
43.8
43.0
41.7
40.5
39.2
38.3
37.2
36.5
35.5
34.3
33.4
32.6
31.9
31.1
(mag)
0.014
0.014
0.014
0.013
0.013
0.013
0.013
0.012
0.012
0.012
0.012
0.011
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.013
0.014
0.015
0.015
0.015
0.016
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
S22
(ang)
4.3
2.9
3.3
4.7
8.8
4.2
7.9
9.1
11.5
13.3
18.1
16.1
20.8
25.7
26.7
30.8
33.2
35.6
38.7
42.5
45.7
46.2
52.5
53.1
55.3
56.8
59.3
59.2
62.2
63.6
64.2
65.1
66.8
66.6
65.2
67.9
68.8
MITSUBISHI ELECTRIC
6/7
(mag)
0.869
0.865
0.865
0.872
0.873
0.875
0.874
0.869
0.872
0.882
0.884
0.886
0.883
0.883
0.886
0.892
0.893
0.894
0.896
0.898
0.902
0.906
0.906
0.906
0.905
0.908
0.911
0.916
0.916
0.921
0.918
0.917
0.921
0.923
0.928
0.930
0.926
(ang)
-176.3
-176.9
-177.5
-177.9
-178.3
-178.5
-178.6
-178.8
-178.9
-179.2
-179.4
-179.5
-179.3
-179.6
-179.7
180.0
179.9
179.8
179.7
179.6
179.2
179.1
179.0
179.1
178.8
178.5
178.1
177.9
178.0
178.1
177.9
177.4
177.0
176.8
176.9
177.3
177.0
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Warning!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD05MMP1
MITSUBISHI ELECTRIC
7/7
1st Jun. 2006