MITSUBISHI RD07MVS1-T112

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
DESCRIPTION
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
0.2+/-0.05
(0.22)
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
2.0+/-0.05
2
0.2+/-0.05
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
0.9+/-0.1
INDEX MARK
(Gate)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RD07MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS1
MITSUBISHI ELECTRIC
1/9
10 Jan 2006
(0.22)
3
(0.25)
APPLICATION
3.5+/-0.05
1.0+/-0.05
High power gain:
Pout>7W, Gp>[email protected]=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
4.9+/-0.15
1
FEATURES
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
Junction to case
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50Ω
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(Pin Control)
f=520MHz,Idq=750mA,Zg=50Ω
Load VSWR=20:1(All Phase)
MIN
1.4
7
55
7
50
LIMITS
TYP
MAX.
200
1
1.7
2.4
8
60
8
55
No destroy
No destroy
UNIT
uA
uA
V
W
%
W
%
-
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD07MVS1
MITSUBISHI ELECTRIC
2/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD07MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
Ta=+25°C
Vds=10V
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
50
8.0
40
Ids(A),GM(S)
CHANNEL DISSIPATION Pch(W)
60
Vgs-Ids CHARACTERISTICS
10.0
On PCB(*1) with Heat-sink
30
20
6.0
4.0
On PCB(*1)
0.0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
0
Vds-Ids CHARACTERISTICS
2
3
Vgs(V)
4
5
160
9
Vgs=5V
Ta=+25°C
120
6
Vgs=4V
5
4
Ciss(pF)
Vgs=4.5V
7
Ta=+25°C
f=1MHz
140
8
Ids(A)
1
Vds VS. Ciss CHARACTERISTICS
10
100
80
60
Vgs=3.5V
3
40
2
20
Vgs=3V
1
0
0
0
2
4
6
Vds(V)
8
0
10
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
20
120
Ta=+25°C
f=1MHz
18
Ta=+25°C
f=1MHz
100
16
14
Crss(pF)
80
Coss(pF)
GM
2.0
10
0
60
40
12
10
8
6
4
20
2
0
0
0
RD07MVS1
Ids
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
3/9
5
10
Vds(V)
15
20
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD07MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
Pin-Po CHARACTERISTICS
@f=175MHz
12.0
Gp
20
40
10
20
0
5
4.0
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
60
40
0.0
10 15 20 25 30
Pin(dBm)
0
Pin-Po CHARACTERISTICS
@f=520MHz
20
1000
500
Pin(mW)
Pin-Po CHARACTERISTICS
@f=520MHz
14.0
60
ηd
Gp
20
40
20
10
5
10.0
8.0
70
6.0
4.0
Idd
6
Po
5
3
10
2
5
0
RD07MVS1
6
8
10
Vdd(V)
12
0.5
1.0
1.5 2.0
Pin(W)
2.5
3.0
14
5
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
20
4
Idd
15
4
25
Po(W)
Po(W)
20
50
Vdd-Po CHARACTERISTICS
@f=520MHz
Idd(A)
25
60
30
0.0
10 15 20 25 30 35
Pin(dBm)
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA
40
Vdd-Po CHARACTERISTICS
@f=175MHz
30
80
ηd
0.0
0
0
90
2.0
Idd
0
100
Po
12.0
Pout(W) , Idd(A)
Po(dBm) , Gp(dB) ,
Idd(A)
30
80
Po
ηd(%)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
40
ηd(%)
0
6.0
15
Po
4
Idd
3
10
2
1
5
1
0
0
Idd(A)
-5
80
ηd
8.0
2.0
Idd
0
Po
ηd(%)
60
ηd
100
10.0
Pout(W) , Idd(A)
Po(dBm) , Gp(dB) ,
Idd(A)
30
80
Po
ηd(%)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
40
0
4
MITSUBISHI ELECTRIC
4/9
6
8
10
Vdd(V)
12
14
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTORISTICS 2
10
+25°C
Vds=10V
Tc=-25~+75°C
8
Ids(A),GM(S)
-25°C
+75°C
6
4
2
0
0
RD07MVS1
1
2
3
Vgs(V)
4
5
MITSUBISHI ELECTRIC
5/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD07MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
W 19m m
19.5m m 24.5m m
10uF,50V
W
R D 07MVS1
175MHz
4.7kO HM
R F-in
C2
19m m
C1
22pF
L
6.5m m 28.5m m
1m m 11.5m m 3m m
10m m
3.5m m 11.5m m
5m m 62pF
5m m
62pF
R F-out
68O HM
140pF
100pF
56pF
16pF
22pF
180pF
L: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D
Note:Board m aterial- Teflon substrate
C1,C2:1000pF,0.022uF in parallel
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :line width=1.0m m
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
W 19m m
4.7kO HM
RF-in
46m m
20pF
RD07MVS1
520MHz
3.5m m 3.5m m
44.5m m
RF-out
3.5m m
68pF
68pF
37pF
20pF
10pF
L: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
C 1,C 2:1000pF,0.022uF in parallel
10uF,50V
L
6.5m m 6.5m m
9m m
C2
19m m W
6pF
18pF
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :ine width=1.0m m
RD07MVS1
MITSUBISHI ELECTRIC
6/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=10Ω
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Zin*=1.55+j5.53
Zout*=3.24-j0.26
175MHz Zin*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
175MHz Zout*
520MHz Zin* Zout*
Zo=10Ω
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*=0.76+j0.06
Zout*=1.61-j0.52
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin*
520MHz Zout*
RD07MVS1
MITSUBISHI ELECTRIC
7/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD07MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.890
0.897
0.899
0.901
0.907
0.913
0.918
0.924
0.928
0.933
0.935
0.937
0.940
0.942
0.944
0.947
0.948
0.949
0.951
0.951
0.952
0.950
0.952
S21
(ang)
-174.1
-175.6
-176.0
-176.3
-176.7
-177.0
-177.3
-177.8
-178.0
-178.3
-178.5
-178.8
-179.2
-179.4
-179.8
179.8
179.4
179.0
178.6
178.2
177.9
177.4
176.9
(mag)
5.508
3.613
3.028
2.604
2.019
1.614
1.308
1.102
0.929
0.790
0.753
0.692
0.595
0.529
0.467
0.416
0.374
0.343
0.304
0.284
0.262
0.234
0.226
S12
(ang)
82.1
75.0
72.4
70.1
65.6
60.7
57.1
54.1
50.1
48.6
47.6
45.3
43.6
42.4
40.2
39.4
38.6
37.6
36.5
37.6
35.1
36.0
35.8
(mag)
0.016
0.015
0.015
0.014
0.014
0.012
0.011
0.010
0.009
0.008
0.007
0.007
0.006
0.006
0.005
0.005
0.004
0.005
0.005
0.006
0.007
0.008
0.009
S22
(ang)
-3.6
-8.5
-9.6
-10.9
-12.7
-15.3
-15.8
-14.2
-14.8
-9.6
-7.7
-5.6
0.4
17.1
21.8
40.9
52.0
67.1
72.6
85.8
85.1
89.8
93.4
(mag)
0.790
0.801
0.802
0.815
0.844
0.843
0.860
0.879
0.882
0.895
0.901
0.906
0.907
0.916
0.923
0.921
0.930
0.933
0.932
0.937
0.938
0.938
0.940
(ang)
-172.8
-174.0
-174.1
-174.0
-174.1
-174.1
-174.4
-175.0
-175.1
-175.5
-175.8
-176.2
-176.6
-177.2
-177.6
-178.0
-178.8
-178.9
-179.3
179.8
179.7
179.3
178.2
RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
RD07MVS1
S11
(mag)
0.883
0.891
0.894
0.897
0.906
0.914
0.920
0.927
0.932
0.937
0.938
0.940
0.944
0.946
0.948
0.950
0.951
0.953
0.954
0.954
0.954
0.952
0.954
S21
(ang)
-172.1
-174.1
-174.6
-175.0
-175.6
-176.0
-176.4
-177.0
-177.4
-177.8
-178.0
-178.3
-178.8
-179.1
-179.5
-179.9
179.6
179.2
178.8
178.4
178.0
177.5
177.0
(mag)
6.013
3.914
3.269
2.798
2.144
1.697
1.361
1.134
0.949
0.800
0.761
0.697
0.594
0.527
0.464
0.412
0.368
0.336
0.297
0.276
0.254
0.226
0.219
S12
(ang)
81.0
72.8
69.8
67.2
62.1
56.9
53.0
49.9
45.8
44.2
43.2
41.1
39.3
38.2
36.1
35.5
34.5
33.6
32.3
33.8
31.1
32.2
32.0
(mag)
0.017
0.016
0.016
0.015
0.014
0.012
0.011
0.010
0.009
0.007
0.007
0.006
0.005
0.004
0.004
0.004
0.004
0.004
0.005
0.006
0.006
0.007
0.008
MITSUBISHI ELECTRIC
8/9
S22
(ang)
-5.3
-10.7
-13.1
-14.9
-18.3
-20.4
-21.6
-21.2
-21.8
-16.9
-16.0
-13.3
-7.2
4.5
17.4
28.0
56.9
66.4
78.3
87.4
90.9
94.7
98.0
(mag)
0.748
0.765
0.769
0.786
0.822
0.828
0.848
0.871
0.876
0.892
0.898
0.904
0.906
0.917
0.924
0.922
0.931
0.934
0.933
0.939
0.941
0.940
0.943
(ang)
-170.4
-171.4
-171.4
-171.3
-171.4
-171.6
-172.0
-172.9
-173.2
-173.7
-174.1
-174.6
-175.1
-175.9
-176.3
-176.9
-177.8
-178.0
-178.3
-179.4
-179.5
-179.9
178.9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MVS1
MITSUBISHI ELECTRIC
9/9
10 Jan 2006