MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 2 14.0+/-0.4 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 For output stage of high power amplifiers in 900MHz band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 APPLICATION 5.1+/-0.5 3 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 71.4 6 6 175 -40 to +175 2.1 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD (Tc=25°C, UNLESS OTHERWISE NOTED) PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=3.0W, Idq=1.0A VDD=15.2V,Po=20W(PinControl) Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.0 20 50 LIMITS TYP MAX. 5 1 3.0 25 55 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD20HMF1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 Vgs-Ids CHARACTERISTICS 10 80 8 60 6 Ids(A) CHANNEL DISSIPATION Pch(W) Ta=+25°C Vds=10V 40 4 2 20 0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS 1 4 5 Vds VS. Ciss CHARACTERISTICS 10 100 Vgs=5V Ta=+25°C f=1MHz Ta=+25°C 8 80 Vgs=4V 4 Vgs=3.5V 2 Vgs=3V Ciss(pF) Vgs=4.5V 6 Ids(A) 2 3 Vgs(V) 60 40 20 Vgs=2.5V 0 Vgs=2V 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 15 20 14 Ta=+25°C f=1MHz 120 Ta=+25°C f=1MHz 12 100 10 Crss(pF) Coss(pF) 10 Vds(V) Vds VS. Crss CHARACTERISTICS 140 80 60 8 6 40 4 20 2 0 0 0 RD20HMF1 5 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 100 60 40 ηｄ 10 Gp 20 15 60 ηd Ta=25°C f=900MHz Vdd=12.5V Idq=1.0A 10 40 5 20 30 Pin(dBm) 35 Idd 0 0 25 80 Ｉｄｄ 0 20 20 ηd(%) 20 100 Po Ta=+25°C f=900MHz Vdd=12.5V Idq=1.0A 30 120 25 80 Po Pout(W) , Idd(A) 40 30 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 40 0 1 2 3 Pin(W) 0 4 5 6 Vdd-Po CHARACTERISTICS 35 7 Ta=25°C f=900MHz Pin=3.0W Idq=1.0A Zg=ZI=50 ohm Po(W) 25 6 5 Po 20 4 15 3 Idd(A) 30 Idd 10 2 5 1 0 0 4 RD20HMF1 6 8 10 Vdd(V) 12 14 MITSUBISHI ELECTRIC 3/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TEST CIRCUIT(f=900MHz) Vdd Vgg C1 4.7OHM C3 22μF,50V C2 6pF 8pF 900MHz RD20HMF1 L1 L2 RF-in RF-OUT 82pF 82pF 5pF 5pF 6pF 8 9pF 6pF 2pF 15 11 17 8 17 4.8 38 53 10.8 90 90 100 100 Note:Board material-Teflon substrate C1:1000pF,22000pF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:100pF*2 in parallel C3:1000pF,22000pF in parallel Dimensions:mm L1:1Turns,I.D3mm,D1.5mm silver plateted copper wire L2:1Turns,I.D3mm,D1.5mm silver plateted copper wire RD20HMF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD20HMF1 Silicon MOSFET Power Transistor,900MHz,20W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zout f=900MHz Zin Zo=10Ω RD20HMF1 Zin , Zout f (MHz) Zin (ohm) Zout (ohm) 900 1.78+j2.50 2.52+j1.76 Conditions Po=20W, Vdd=12.5V,Pin=3W MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD20HMF1 Silicon MOSFET Power Transistor,900MHz,20W RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA) Freq [MHz] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 RD20HMF1 S11 (mag) 0.862 0.868 0.872 0.882 0.897 0.912 0.917 0.926 0.934 0.947 0.953 0.959 0.962 0.966 0.965 0.963 0.958 0.956 0.955 0.953 0.954 0.954 0.956 0.951 0.954 0.946 0.949 0.942 0.946 0.938 S21 (ang) -168.4 -173.3 -174.8 -174.8 -176.1 -176.8 -177.8 -178.6 -179.3 179.5 178.6 177.2 176.4 174.8 173.6 172.0 170.4 168.8 166.9 165.2 163.2 160.9 159.0 156.6 154.8 152.6 150.4 148.1 146.1 144.1 (mag) 8.814 4.213 2.614 1.820 1.343 1.028 0.812 0.663 0.560 0.482 0.421 0.358 0.320 0.292 0.269 0.244 0.222 0.202 0.186 0.177 0.168 0.160 0.151 0.139 0.129 0.124 0.114 0.105 0.099 0.094 S12 (ang) 83.5 70.7 60.4 52.2 44.6 38.7 33.5 29.4 25.9 23.0 19.7 16.8 14.3 12.3 10.2 8.1 6.2 3.8 1.9 0.3 -2.0 -3.6 -6.2 -8.1 -10.0 -12.1 -13.3 -13.0 -12.1 -10.3 (mag) 0.016 0.014 0.012 0.011 0.009 0.007 0.006 0.005 0.006 0.007 0.008 0.009 0.011 0.013 0.015 0.016 0.018 0.020 0.022 0.024 0.026 0.028 0.030 0.032 0.034 0.037 0.039 0.040 0.041 0.044 MITSUBISHI ELECTRIC 6/7 S22 (ang) -4.3 -10.9 -11.0 -16.2 -12.5 -5.3 7.6 25.8 43.8 54.0 62.2 68.5 70.8 75.6 74.7 75.4 76.9 74.8 74.8 73.3 74.1 71.7 70.0 67.4 65.4 63.6 60.1 56.5 54.0 51.0 (mag) 0.798 0.813 0.834 0.856 0.876 0.887 0.907 0.920 0.930 0.941 0.947 0.950 0.949 0.951 0.954 0.944 0.946 0.949 0.945 0.947 0.945 0.945 0.943 0.935 0.935 0.936 0.934 0.933 0.932 0.931 (ang) -172.5 -173.9 -174.6 -174.8 -175.6 -175.6 -176.6 -177.9 -178.6 -179.0 -179.9 179.3 178.5 177.8 176.7 175.4 174.7 173.2 171.8 170.1 168.6 166.9 164.7 162.6 160.4 158.0 155.2 152.4 149.9 147.2 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD20HMF1 Silicon MOSFET Power Transistor,900MHz,20W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD20HMF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006