MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band 2 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in UHF Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD60HUF1-101 +0.05 R1.6+/-0.15 3 APPLICATION 9.6+/-0.3 FEATURES 24.0+/-0.6 1 10.0+/-0.3 RoHS Compliance, is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 150 20 20 175 -40 to +175 1.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz ,VDD=12.5V Pin=10W, Idq=2.5A VDD=15.2V,Po=60W(PinControl) f=520MHz,Idq=2.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.1 60 50 LIMITS TYP MAX. 400 1 1.45 1.8 65 55 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD60HUF1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 180 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V CHANNEL DISSIPATION Pch(W) 160 8 140 120 6 Ids(A) 100 80 4 60 40 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 2 Vgs(V) 3 4 Vds VS. Ciss CHARACTERISTICS 10 400 Ta=+25°C 350 8 300 Vgs=3.1V 6 Ciss(pF) Ids(A) 1 Vgs=2.8V 4 Ta=+25°C f=1MHz 200 150 100 Vgs=2.5V 2 250 50 Vgs=2.2V 0 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 350 50 Ta=+25°C f=1MHz 300 Ta=+25°C f=1MHz 40 Crss(pF) Coss(pF) 250 200 150 30 20 100 10 50 0 0 0 RD60HUF1 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 100 Po 80 80 ηｄ 30 60 20 40 Gp 10 Ｉｄｄ 0 10 20 30 Pin(dBm) 80 ηd 60 60 Ta=25°C f=520MHz Vdd=12.5V Idq=2.5A 40 20 20 0 0 40 0 Vdd-Po CHARACTERISTICS Ta=25°C f=520MHz Pin=10W Idq=2.5A Zg=ZI=50 ohm 12 Idd 10 40 8 30 6 20 4 10 2 0 RD60HUF1 8 14 50 6 8 10 Vdd(V) 12 20 +25°C 6 4 +75°C 2 -25°C 0 0 4 15 Vds=10V Tc=-25~+75°C 16 Po Ids(A) Po(W) 60 10 Pin(W) Vgs-Ids CHARACTERISTICS 2 Idd(A) 70 5 10 18 80 20 Idd 0 90 40 ηd(%) 40 100 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Pout(W) , Idd(A) Ta=+25°C f=520MHz Vdd=12.5V Idq=2.5A 2 14 MITSUBISHI ELECTRIC 3/7 3 Vgs(V) 4 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W TEST CIRCUIT(f=520MHz) Vdd Vgg C1 9.1kOHM L3 C3 100OHM 8.2kOHM L1 RF-in 15pF 18pF 520MHz RD60HUF1 L2 C2 RF-OUT 56pF 56pF 15pF 24pF 4 18pF 10 12 6 12 8 8 90 90 14 100 100 Note:Board material-Teflon substrate C1:2200pF 10uf in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD60HUF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=440MHz Zout f=300MHz Zout f=440MHz Zin f=300MHz Zin Zo=10Ω RD60HUF1 Zin , Zout f (MHz) Zin (ohm) Zout (ohm) 300 1.16-j0.06 0.83+j0.14 440 1.18+j0.09 1.20+j0.58 520 1.15+j0.86 1.05+j1.09 Conditions Po=70W, Vdd=12.5V,Pin=10W Po=65W, Vdd=12.5V,Pin=10W Po=60W, Vdd=12.5V,Pin=10W MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 50 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 RD60HUF1 S11 (mag) 0.909 0.910 0.923 0.935 0.944 0.949 0.957 0.961 0.964 0.969 0.974 0.975 0.977 0.978 0.982 0.983 0.979 0.982 0.985 0.980 0.981 0.981 (ang) -156.8 -177.1 178.6 175.5 173.9 172.5 169.2 166.2 163.3 159.8 157.0 153.8 151.0 147.8 145.1 141.9 139.5 136.7 133.7 130.9 128.0 124.9 S21 (mag) (ang) 30.933 98.0 6.014 75.6 2.796 60.1 1.678 46.1 1.351 40.5 1.109 36.2 0.804 27.2 0.583 18.3 0.450 12.0 0.368 6.8 0.296 2.3 0.238 -3.0 0.209 -6.1 0.178 -14.1 0.155 -17.5 0.136 -19.6 0.113 -17.5 0.104 -20.2 0.103 -33.7 0.084 -27.4 0.083 -35.1 0.071 -28.7 S12 (mag) 0.012 0.011 0.010 0.008 0.008 0.007 0.005 0.004 0.003 0.002 0.002 0.003 0.003 0.005 0.006 0.006 0.007 0.009 0.009 0.010 0.010 0.012 MITSUBISHI ELECTRIC 6/7 S22 (ang) 8.6 -10.8 -25.0 -32.2 -39.0 -41.7 -42.3 -40.2 -21.8 -4.8 38.1 38.4 49.4 53.8 54.4 50.3 51.8 56.2 49.6 46.5 47.2 43.8 (mag) 0.788 0.811 0.845 0.869 0.877 0.893 0.930 0.930 0.945 0.957 0.956 0.962 0.965 0.963 0.971 0.973 0.972 0.980 0.978 0.975 0.983 0.984 (ang) -166.6 -177.2 -178.5 178.3 177.0 175.6 172.3 169.2 166.0 162.4 159.5 156.5 153.4 150.1 147.4 144.5 141.5 138.4 136.2 133.1 130.4 128.0 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD60HUF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006