MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 6.2+/-0.7 18.5+/-0.3 3.3+/-0.2 RoHS COMPLIANT RD70HVF1-101 +0.05 R1.6+/-0.15 3 APPLICATION 9.6+/-0.3 24.0+/-0.6 High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band 10.0+/-0.3 4-C2 1 FEATURES is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 150 10(Note2) 20 175 -40 to +175 1.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 20W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout ηD Pout ηD Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=6W, Idq=2.0A f=520MHz ,VDD=12.5V Pin=10W, Idq=2.0A VDD=15.2V,Po=70W(PinControl) f=175MHz,Idq=2.0A,Zg=50Ω LoadVSWR=20:1(All phase) VDD=15.2V,Po=50W(PinControl) f=520MHz,Idq=2.0A,Zg=50Ω Load VSWR=20:1(All phase) MIN 1.3 70 55 50 50 LIMITS TYP MAX. 300 5 1.8 2.3 75 60 55 55 No destroy No destroy UNIT uA uA V W % W % - - Note : Above parameters , ratings , limits and conditions are subject to change. RD70HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL CHARACTERISTICS 160 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 10 CHANNEL DISSIPATION Pch(W) 140 Ta=+25°C Vds=10V 8 120 6 Ids(A) 100 80 60 4 40 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgs(V) Vds-Ids CHARACTERISTICS Vds VS. Ciss CHARACTERISTICS 10 350 Ta=+25°C 300 Vgs=3.7V 8 6 Ciss(pF) Ids(A) 250 Vgs=3.4V 4 Vgs=3.1V Ta=+25°C f=1MHz 200 150 100 2 Vgs=2.8V 50 Vgs=2.5V 0 0 Vgs=2.2V 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 15 20 30 Ta=+25°C f=1MHz 250 Ta=+25°C f=1MHz 25 20 200 Crss(pF) Coss(pF) 10 Vds(V) Vds VS. Crss CHARACTERISTICS 300 150 100 15 10 5 50 0 0 0 RD70HVF1 5 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/8 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz 80 80 ηｄ 30 60 Gp Pout(W) , Idd(A) 80 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 40 100 Po 100 Po 40 20 10 ηd 60 60 Ta=25°C f=175MHz Vdd=12.5V Idq=2A 40 20 20 0 0 40 ηd(%) Ta=+25°C f=175MHz Vdd=12.5V Idq=2A 50 Pin-Po CHARACTERISTICS @f=175MHz 100 20 Idd Ｉｄｄ 0 30 40 Pin(dBm) Pin-Po CHARACTERISTICS @f=520MHz Pin-Po CHARACTERISTICS @f=520MHz 60 40 20 Pout(W) , Idd(A) 30 Gp Ｉｄｄ 10 20 30 Pin(dBm) 60 50 40 40 30 20 0 0 Vdd-Po CHARACTERISTICS @f=175MHz 14 8 Po(W) 10 Ta=25°C f=520MHz Pin=10W Idq=2A Zg=ZI=50 ohm 50 Idd(A) 12 6 4 20 15 20 12 60 16 40 10 Pin(W) 70 18 Idd 5 Vdd-Po CHARACTERISTICS @f=520MHz 20 60 20 10 0 Po 30 Ta=25°C f=520MHz Vdd=12.5V Idq=2A 10 40 100 50 ηd Idd 0 80 70 60 80 Ta=25°C f=175MHz Pin=6W Idq=2A Zg=ZI=50 ohm 10 ηd(%) Po 20 8 Po ηｄ 10 2 70 ηd(%) 40 0 100 Ta=+25°C f=520MHz Vdd=12.5V Idq=2A 0 Po(W) 0 4 6 Pin(W) 50 Po(dBm) , Gp(dB) , Idd(A) 20 Po 10 8 Idd 40 6 30 4 20 2 Idd(A) 10 2 0 0 4 RD70HVF1 6 8 10 Vdd(V) 12 0 10 14 4 MITSUBISHI ELECTRIC 3/8 6 8 10 Vdd(V) 12 14 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 +25°C 10 Vds=10V Tc=-25~+75°C Ids(A) 8 6 4 +75°C 2 -25°C 0 2 2.5 3 Vgs(V) 3.5 4 TEST CIRCUIT(f=175MHz) Vdd Vgg C1 9.1kOHM C3 L2 8.2kOHM 100pF 56pF RF-IN 175MHz RD70HVF1 100OHM 72pF C2 L1 0-20pF 56pF RF-OUT 56pF 0-20pF 18pF 20pF 35pF 100pF 37pF 10 10 21 8pF 20.5 41 43 138.5 150.5 190 165 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel 0-20pF Dimensions:mm L1:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:4Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire RD70HVF1 MITSUBISHI ELECTRIC 4/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TEST CIRCUIT(f=520MHz) Vdd Vgg C1 9.1kOHM 8.2kOHM C3 L3 15pF 100OHM L1 RF-IN C2 15pF 520MHz RD70HVF1 L2 RF-OUT 56pF 56pF 0-10pF 22pF 15pF 5pF 0-10pF 5pF 15pF 15pF 8 12 40 45 5pF 18 38 70 88 80 100 100 Note:Board material-Teflon substrate C1:2200pF 10uF in parallel micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm C2:2200pF*2 in parallel C3:2200pF,330uF in parallel Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD70HVF1 MITSUBISHI ELECTRIC 5/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10Ω f=135MHz Zout f=175MHz Zout f=175MHz Zin f=135MHz Zin Zin, Zout f (MHz) 135 175 Zin (ohm) 0.43-j3.19 0.55-j2.53 Zout (ohm) 0.70+j0.25 0.72-j0.36 Conditions Po=90W, Vdd=12.5V,Pin=6W Po=80W, Vdd=12.5V,Pin=6W f=520MHz Zout Zo=10Ω f=520MHz Zin f=440MHz Zout f=440MHz Zin Zin, Zout f (MHz) 440 520 RD70HVF1 Zin (ohm) 0.74-j0.34 1.04+j0.63 Zout (ohm) 0.71-j0.18 0.93+j1.62 Conditions Po=60W, Vdd=12.5V,Pin=10W Po=55W, Vdd=12.5V,Pin=10W MITSUBISHI ELECTRIC 6/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W RD70HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 RD70HVF1 S11 (mag) 0.885 0.906 0.930 0.939 0.946 0.957 0.967 0.969 0.976 0.974 0.980 0.978 0.980 0.980 0.982 0.985 0.982 0.982 0.984 0.983 0.984 0.985 S21 (ang) -174.0 -176.8 -179.0 179.8 178.7 176.7 174.7 173.0 171.0 169.6 168.0 167.2 166.2 164.6 163.3 162.0 160.7 159.4 158.1 157.0 155.9 154.6 (mag) 8.441 3.713 2.095 1.647 1.337 0.908 0.661 0.495 0.378 0.316 0.276 0.247 0.216 0.176 0.156 0.126 0.108 0.106 0.107 0.078 0.079 0.067 S12 (ang) 72.4 55.3 41.2 35.9 32.3 24.8 19.4 13.6 12.2 5.4 2.3 0.9 -0.2 -1.5 -1.4 -3.3 -2.0 -1.1 -9.0 -13.4 -4.5 -5.3 (mag) 0.013 0.011 0.008 0.007 0.006 0.004 0.002 0.001 0.002 0.003 0.003 0.003 0.004 0.005 0.007 0.007 0.007 0.009 0.009 0.010 0.011 0.011 MITSUBISHI ELECTRIC 7/8 S22 (ang) -16.2 -30.9 -39.5 -44.3 -46.6 -46.5 -40.8 -23.4 38.2 73.6 75.6 75.3 69.2 74.3 79.3 75.4 76.7 77.1 72.6 72.1 74.4 72.7 (mag) 0.745 0.805 0.860 0.874 0.897 0.933 0.935 0.952 0.965 0.965 0.973 0.974 0.975 0.974 0.979 0.983 0.982 0.984 0.989 0.983 0.987 0.993 (ang) -170.3 -170.5 -173.3 -174.6 -175.6 -178.1 179.4 177.2 175.0 172.9 171.4 170.6 169.5 167.8 166.3 164.9 163.6 162.0 160.9 159.6 158.2 157.3 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD70HVF1 MITSUBISHI ELECTRIC 8/8 10 Jan 2006