MOTOROLA MMBT2907LT1

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by MMBT2907LT1/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
PNP Silicon
*Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
1
Rating
Symbol
2907
2907A
Unit
Collector – Emitter Voltage
VCEO
–40
–60
Vdc
Collector – Base Voltage
VCBO
Emitter – Base Voltage
VEBO
–5.0
Vdc
IC
–600
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Collector Current — Continuous
–60
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Vdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
–40
–60
—
—
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
MMBT2907
MMBT2907A
Vdc
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
ICEX
—
–50
nAdc
MMBT2907
MMBT2907A
—
—
–0.020
–0.010
MMBT2907
MMBT2907A
—
—
–20
–10
—
–50
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
µAdc
ICBO
IB
nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
v
v
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
MMBT2907
MMBT2907A
35
75
—
—
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
50
100
—
—
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
75
100
—
—
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
—
100
—
300
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
30
50
—
—
—
—
–0.4
–1.6
—
—
–1.3
–2.6
200
—
—
8.0
—
30
ton
—
45
td
—
10
tr
—
40
toff
—
100
ts
—
80
tf
—
30
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE
—
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
Delay Time
Rise Time
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
Storage Time
Fall Time
v
v
ns
ns
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
–30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
50
–16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
2
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
+15 V
–6.0 V
1.0 k
1.0 k
0
–30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = –1.0 V
VCE = –10 V
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
–1.0
–0.8
IC = –1.0 mA
–10 mA
–100 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
IB, BASE CURRENT (mA)
–3.0
–2.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
tf
td @ VBE(off) = 0 V
3.0
–5.0 –7.0 –10
2.0 V
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT
100
70
50
30
t′s = ts – 1/8 tf
20
10
7.0
5.0
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
–200 –300 –500
Figure 5. Turn–On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
7.0
5.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
3
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = –1.0 mA, Rs = 430 Ω
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
–100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
C, CAPACITANCE (pF)
50
100
200
500 1.0 k 2.0 k
20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
Ccb
5.0
3.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
50 k
400
300
200
100
80
VCE = –20 V
TJ = 25°C
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
–1.0
TJ = 25°C
–0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
–0.8
VBE(on) @ VCE = –10 V
–0.4
–0.2
RqVC for VCE(sat)
–0.5
–1.0
–1.5
RqVB for VBE
–2.0
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
4
5.0 k 10 k
f, FREQUENCY (kHz)
20
V, VOLTAGE (VOLTS)
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
4.0
0
100
30
2.0
–0.1
6.0
2.0
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
–500
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
H
D
K
J
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6
◊
*MMBT2907LT1/D*
Motorola Small–Signal Transistors, FETs and Diodes
Device Data
MMBT2907LT1/D