Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — –31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs • Excellent Thermal Stability CASE 1265–07, STYLE 1 (TO–270) PLASTIC (MRF9030MR1) • Characterized with Series Equivalent Large–Signal Impedance Parameters • Moisture Sensitivity Level 3 • Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1337–01, STYLE 1 (TO–272 DUAL LEAD) PLASTIC (MRF9030MBR1) MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 139 0.93 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 175 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9030MR1 MRF9030MBR1 C7 (Minimum) C6 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.08 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9030MR1 MRF9030MBR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3 3.8 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.23 0.4 Vdc gfs — 2.7 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 20 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — –13 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 20 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 40.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — –12 — dB OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF9030MR1 MRF9030MBR1 2 MOTOROLA RF DEVICE DATA Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.200″ x 0.270″ Microstrip 0.330″ x 0.270″ Microstrip 0.140″ x 0.270″ x 0.520″, Taper 0.040″ x 0.520″ Microstrip 0.090″ x 0.520″ Microstrip 0.370″ x 0.520″ Microstrip (MRF9030MR1) 0.290″ x 0.520″ Microstrip (MRF9030MBR1) 0.130″ x 0.520″ Microstrip (MRF9030MR1) 0.210″ x 0.520″ Microstrip (MRF9030MBR1) Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.360″ x 0.270″ Microstrip 0.050″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.220″ x 0.060″ Microstrip 0.100″ x 0.060″ Microstrip 0.870″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF–35–0300, εr = 3.5 Figure 1. 930–960 MHz Broadband Test Circuit Schematic Table 1. 930 – 960 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead, Surface Mount 95F786 Newark B2 Long Ferrite Bead, Surface Mount 95F787 Newark C1, C7, C14, C15 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2 0.6–4.5 Variable Capacitor, Gigatrim 44F3360 Newark C3, C11 3.9 pF Chip Capacitors, B Case 100B3R6BP 500X ATC C4, C12 0.8–8.0 Variable Capacitors, Gigatrim 44F3360 Newark C5, C6 6.8 pF Chip Capacitors, B Case 100B7R5JP 500X ATC C8, C16, C17 10 µF, 35 V Tantulum Chip Capacitors 93F2975 Newark C9, C10 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C13 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6–4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 100B1R8BP 44F3360 ATC Newark C18 220 µF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft Inductors A04T–5 Coilcraft WB1, WB2 20 mil Brass Shim (0.250 x 0.250) RF–Design Lab RF–Design Lab PCB Etched Circuit Board 900 MHz µ250/Viper Rev 02 DSelectronics MOTOROLA RF DEVICE DATA MRF9030MR1 MRF9030MBR1 3 CUT OUT AREA MRF9030M Figure 2. 930–960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) CUT OUT AREA 900 MHz Rev 02 Figure 3. 930–960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 4 MOTOROLA RF DEVICE DATA 0:: (:,:'") η ! "# $%& ! ' ( ) * ! +, -$$./0 123 $./ 45#6.7 0: :( 44:'") 0:(, 4:'"#) h 0:, ((9:';) TYPICAL CHARACTERISTICS 80 (*(9 '23) Figure 4. Class AB Broadband Circuit Performance * ! +, < +, +, < < 0 (,:4:'"#) ! "# 8 ! 23 8 ! < 23 +, * ! +, +, +, < ! "# +, 8 ! 23 8 ! < 23 Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion versus Output Power >" >"/> &= >"/> &= >"/> < $%&0 ( ',4) ( ! "# * ! +, 8 ! 23 8 ! < 23 $%&0 ( ',4) ( 0:: (:,:'") < < ! "# * ! +, 8 ! 23 η $%&0 ( ',4) ( $%&0 ( ',4) ,< Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA η0:,:((9:';) 0:: (:,:'") 0 (,:4:'"#) < MRF9030MR1 MRF9030MBR1 5 0:: (:,:'") ! "# * ! +, 8 ! 23 8 ! < 23 η < η0:,:((9:';) 0 (,:4:'"#) $%&0 ( ',4) ( Figure 9. Power Gain, Efficiency and IMD versus Output Power MRF9030MR1 MRF9030MBR1 6 MOTOROLA RF DEVICE DATA $ ! Ω 8 ! 23 8 ! 23 8 ! 23 8 ! 23 @ 6. ! 0 * ! +,0 $%& ! 5&& ' ( ) f MHz Zin ZOL* Ω Zin Ω 930 1.07 – j0.160 3.53 + j0.20 945 1.14 – j0.385 3.41 + j0.24 960 1.17 – j0.170 3.60 + j0.17 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. $&/? @ -5 #=$/. A5/" $. &>5"/$88 A/&-//. 756.0 $%&%& $-/>0 ">56. /886#6/.#B 5." 6.&/>+$"%C5&6$. "6&$>&6$.< .%& 5&#=6.7 /&-$>1 %&%& 5&#=6.7 /&-$>1 /D6#/ ."/> /& Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1) MOTOROLA RF DEVICE DATA MRF9030MR1 MRF9030MBR1 7 $ ! Ω 6. @ 8 ! 23 8 ! 23 8 ! 23 8 ! 23 ! 0 * ! +,0 $%& ! 5&& ' ( ) f MHz Zin ZOL* Ω Zin Ω 930 1.0 + j0.18 3.05 + j0.09 945 1.0 + j0.10 3.00 + j0.07 960 1.0 + j0.03 2.95 + j0.03 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. $&/? @ -5 #=$/. A5/" $. &>5"/$88 A/&-//. 756.0 $%&%& $-/>0 ">56. /886#6/.#B 5." 6.&/>+$"%C5&6$. "6&$>&6$.< .%& 5&#=6.7 /&-$>1 %&%& 5&#=6.7 /&-$>1 /D6#/ ."/> /& Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9030MR1 MRF9030MBR1 9 PACKAGE DIMENSIONS B E1 2X 2X D3 PIN ONE ID E4 555 D 555 , 2X , D1 b1 E ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ A E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa BOTTOM VIEW c1 H (4? < (4? 2< < ( ( (44 , (,(4 ( ,4( 9<< < , ,( 2 4 ,( , (, , 4 ( 2 2( (, 2(( 2( (, (E4 2( ,4 9 , 2( 2( , (< < (44 “F , “(F ( 4< ,,( 4 4 < ( 4(< (44 “F , “(F ( 4,2 , ,( ((G ( , , ,( 2< < (4 A (4 ( ,, 4< ,,( ,, 4 42, ( < , (E(44 2( A (4 , ,E ,(, < < ,4 , , ( ((( , , ,( 2< < (4 , , (4 2 ( “HF 9< < (44 “F , “(F ( 4< ,,( 4 4 < ( 4(< (44 “F , “(F ( 4,2 , ,( ((G ( , , ,( < DATUM PLANE A A1 INCHES MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < <:4 < < < < < MILLIMETERS MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < <:4 < < < < < 49( ? < , < ,( < 4( 2X A2 NOTE 7 F E2 D ZONE J CASE 1265–07 ISSUE F (TO–270) PLASTIC (MRF9030MR1) MRF9030MR1 MRF9030MBR1 10 MOTOROLA RF DEVICE DATA r1 2X 555 , A E1 B PIN 3 PIN ONE ID D1 2X 555 b1 , D 1 2 PIN ONE ID E VIEW Y–Y c1 H DATUM PLANE A A1 A2 F ZONE "J" 7 Y Y C SEATING PLANE 49( ? < , < ,( < 4( (4? < (4? 2< < ( ( (44 , (,(4 ( ,4( 9<0 < < , ,( 2 4 ,( , 2( (, , 4 ( 2 2( (, 2(( 2( (, (E4 2( ,4 9 , 2( 2( , (< < (44 FF , F(F ( 4< ,,( 4 4 < ( 4(< (44 FF , F(F ( 4,2 , ,( ((( , , ,( 2< < (4 FAF (4 ( ,, 4< ,,( ,, 4 42, ( < , (E(44 2( FAF (4 , ,E ,(, < < ,4 , , ( ((( , , ,( 2< < (4 , , (4 2 ( FHF 9< DIM A A1 A2 D D1 E E1 F b1 c1 r1 aaa INCHES MIN MAX < < < < < < < < <:4 < < < < <:4 < < < < < < < MILLIMETERS MIN MAX < < < < < < < < <:4 < < < < <:4 < < < < < < < CASE 1337–01 ISSUE O (TO–272 DUAL LEAD) PLASTIC (MRF9030MBR1) MOTOROLA RF DEVICE DATA MRF9030MR1 MRF9030MBR1 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9030MR1 MRF9030MBR1 12 ◊ MOTOROLA RF DEVICEMRF9030M/D DATA