OMRON EE

Opto–Switch
EE–SX1055
Transmissive
Phototransistor output.
Long lead version of EE–SX1025
Longer leads allow the sensor to be mounted to a
1.6-mm thick board.
5.4-mm-tall compact model.
PCB mounting type.
High resolution with a 0.5-mm-wide aperture.
Dimensions
0.2 max.
0.2 max.
Internal Circuit
Four, 5°
0.5±0.05
White band
K
C
A
E
3.6±0.5
Four, 0.5 Four, 0.25
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Optical
axis
5.4±0.2
Terminal No.
A
K
C
E
Cross section AA
Dimensions
Tolerance
3 mm max.
±0.3
3 t mm v 6
±0.375
6 t mm v 10
±0.45
10 t mm v 18
±0.55
18 t mm v 30
±0.65
30 t mm v 50
±0.8
50 t mm v 80
±0.95
80 t mm v 100
±1.1
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Note:
Symbol
Rated value
Forward current
IF
50 mA (see note 1)
Pulse forward current
IFP
1 A (see note 2)
Reverse voltage
VR
4V
Collector–Emitter voltage
VCEO
30 V
Emitter–Collector voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW (see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Soldering
Tsol
260°C
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 µA typ., 10 µA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 ȏx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 µs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 µs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Engineering Data
Ta = 25°C
VCE = 10 V
Ambient temperature Ta (°C)
Light Current vs. Collector–Emitter
Voltage Characteristics (Typical)
IF = 30 mA
IF = 20 mA
IF = 10
mA
Collector–Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V
0 ȏx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current I L (%)
Response time tr, tf ( µ s)
Ta = 70°C
Sensing Position Characteristics
(Typical)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ta = 25°C
Forward voltage VF (V)
Relative light current I L (%)
Light current I L (mA)
IF = 40 mA
Ta = –30°C
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Ta = 25°C
IF = 50 mA
Light current I L (mA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Dark current I D (nA)
Collector dissipation Pc (mW)
Forward current I F (mA)
IF
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current I F (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
Distance d (mm)