ON Semiconductort NPN 2N6283 Darlington Complementary Silicon Power Transistors 2N6284 . . . designed for general−purpose amplifier and low−frequency switching applications. PNP 2N6286 • High DC Current Gain @ IC = 10 Adc − • • w hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built−In Base−Emitter Shunt Resistors 2N6287 DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbo l 2N6283 2N6286 2N6284 2N6287 Unit VCEO 80 100 Vdc Collector−Base Voltage VCB 80 100 Vdc Emitter−Base Voltage Rating Collector−Emitter Voltage VEB 5.0 Vdc Collector Current − Continuous Peak IC 20 40 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 160 0.915 Watts W/_C Operating and Storage Junction Temperature Range TJ,Tstg −65 to + 200 _C CASE 1−07 TO−204AA (TO−3) *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. Symbol Max Unit RθJC 1.09 _C/W PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 75 150 50 100 125 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: 2N6284/D 2N6283 2N6284 2N6286 2N6287 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 80 100 − − − − 1.0 1.0 − − 0.5 5.0 − 2.0 750 100 18,000 − − − 2.0 3.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) 2N6283, 2N6286 2N6284, 2N6287 VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) − 4.0 Vdc |hfe| 4.0 − MHz − − 400 600 300 − DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6283, 2N6284 2N6286, 2N6287 Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2% Cob hfe http://onsemi.com 2 pF − 2N6283 2N6284 2N6286 2N6287 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC TUT RB V2 APPROX + 8.0 V 0 51 V1 APPROX 25 μs − 12 V tr, tf v 10 ns DUTY CYCLE = 1.0% D1 [ 8.0 k ts [ 50 + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 2.0 tf r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V T = 25°C 0.1 J 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Switching Times 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.09°C/W MAX 0.05 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 0.05 0.03 0.01 0.02 SINGLE PULSE 0.01 0.01 tr 1.0 0.7 0.5 Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 2N6284 (NPN) 2N6287 (PNP) 3.0 SCOPE t, TIME (s) μ D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA 10 7.0 5.0 VCC − 30 V 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 2N6283 2N6284 2N6286 2N6287 ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 IC, COLLECTOR CURRENT (AMP) 0.1 ms 20 0.5 ms 10 1.0 ms 5.0 5.0 ms dc 2.0 1.0 TJ = 200°C 0.5 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C SINGLE PULSE 0.2 0.1 0.05 2.0 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. 2N6284, 2N6287 1000 TJ = 25°C TJ = 25°C VCE = 3.0 Vdc IC = 10 A 5000 2000 700 C, CAPACITANCE (PF) hFE, SMALL−SIGNAL CURRENT GAIN 10,000 1000 500 200 100 500 300 Cib Cob 200 50 10 2N6284 (NPN) 2N6287 (PNP) 2N6284 (NPN) 2N6287 (PNP) 20 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 100 0.1 0.2 500 1000 Figure 6. Small−Signal Current Gain 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 2N6283 2N6284 2N6286 2N6287 NPN 2N6284 PNP 2N6287 VCE = 3.0 V 30,000 20,000 TJ = 150°C 10,000 20,000 VCE = 3.0 V 7000 5000 3000 2000 1000 700 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 25°C −55 °C 500 300 200 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 TJ = 150°C 7000 5000 25°C 3000 2000 −55 °C 1000 700 500 300 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25°C 2.6 IC = 5.0 A 10 A 15 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 20 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 30 50 3.0 TJ = 25°C 2.6 IC = 5.0 A 15 A 10 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 1.5 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.5 20 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 5 20 2N6283 2N6284 2N6286 2N6287 PNP 2N6287 +5.0 +4.0 +3.0 *APPLIES FOR IC/IB ≤ θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN 2N6284 hFE@VCE + 3.0V 250 +2.0 25°C to 150°C +1.0 −55 °C to + 25°C 0 −1.0 *θVC for VCE(sat) −2.0 −3.0 25°C to + 150°C θVB for VBE −55 °C to + 25°C −4.0 −5.0 0.2 0.3 0.7 1.0 0.5 2.0 3.0 5.0 7.0 10 +5.0 +4.0 +3.0 hFE@VCE + 3.0V 250 +2.0 25°C to 150°C +1.0 −55 °C to + 25°C 0 −1.0 *θVC for VCE(sat) −2.0 25°C to + 150°C −3.0 θVB for VBE −4.0 −5.0 20 *APPLIES FOR IC/IB ≤ −55 °C to + 25°C 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 103 VCE = 30 V IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 103 TJ = 150°C 102 100°C 101 REVERSE FORWARD 100 VCE = 30 V 102 TJ = 150°C 101 100°C 100 10−1 REVERSE 10−2 FORWARD 25°C 25°C 10−1 −0.6 −0.4 −0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 10−3 +0.6 +0.4 +1.2 + 1.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) +0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region COLLECTOR COLLECTOR NPN 2N6284 PNP 2N6287 BASE BASE [ 8.0 k [ 60 [ 8.0 k EMITTER [ 60 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 −1.2 −1.4 2N6283 2N6284 2N6286 2N6287 PACKAGE DIMENSIONS CASE 1−07 TO−204AA (TO−3) ISSUE Z A N C E D −T− U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. T Q M M Y M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N6284/D