BAS16TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available* http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit Rating Peak Forward Surge Current Pulse Width = 10 s 3 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 3 2 PD 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C RJA 345 °C/W TJ, Tstg −55 to +150 °C RJA 1 1 ANODE CASE 463 SOT−416 STYLE 2 MARKING DIAGRAM PD A6 ORDERING INFORMATION 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad Device Package Shipping† BAS16TT1 SOT−416 3000 / Tape & Reel BAS16TT1G SOT−416 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 2 1 Publication Order Number: BAS16TT1/D BAS16TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − − − 715 866 1000 1250 − − − 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) trr − 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS − 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V http://onsemi.com 2 mV A BAS16TT1 1 ns MAX 10% DUT 500 t trr tif 50 DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 M C 7 pF 500 VC DUT 20 ns MAX D1 t 10% Qa VCM C 243 pF 100 K DUTY CYCLE = 2% t 90% Vf BAW62 VCM 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 1 K V 450 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 50 BAS16TT1 10 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 4 10 100 1000 BAS16TT1 PACKAGE DIMENSIONS SC−416/SC−90/SOT−75 CASE 463−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −A− S 2 3 D 3 PL 0.20 (0.008) DIM A B C D G H J K L S G −B− 1 M B K J 0.20 (0.008) A STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE C L MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC H http://onsemi.com 5 INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC BAS16TT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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