BAV70TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package May be Available.* The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com ANODE 1 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Rating Peak Forward Surge Current 3 CATHODE 3 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR−4 Board (1) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR−4 Board (2) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction−to−Ambient (2) Junction and Storage Temperature Range 2 ANODE Max Unit 2 1 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C RJA 345 °C/W TJ, Tstg −55 to +150 CASE 463 SOT−416/SC−75 STYLE 3 DEVICE MARKING A4 °C 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping† BAV70TT1 SOT−416 3000 / Tape & Reel BAV70TT1G SOT−416 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 2 1 Publication Order Number: BAV70TT1/D BAV70TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 − Vdc IR IR − − 5.0 100 Adc nAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 1.5 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr − 6.0 ns VRF − 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 3) (VR = 70 Vdc) (VR = 50 Vdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) 3. For each individual diode while the second diode is unbiased. http://onsemi.com 2 mVdc BAV70TT1 BAV70 RS = 50 SAMPLING OSCILLOSCOPE RL = 50 IF tr tp I 10% +IF trr 10%OF 90% VR OUTPUT PULSE INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 1 K 450 RS = 50 SAMPLING OSCILLOSCOPE RL = 50 BAV70 I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. http://onsemi.com 3 OUTPUT PULSE t VR 100 BAV70TT1 10 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 3. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 4. Leakage Current CD, DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 5. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 6. Normalized Thermal Response http://onsemi.com 4 10 100 1000 BAV70TT1 PACKAGE DIMENSIONS SC−75 (SC−90, SOT−416) CASE 463−01 ISSUE C −A− S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G −B− 1 M B K J 0.20 (0.008) A C L DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE H http://onsemi.com 5 INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC BAV70TT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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