BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On−State and Switching Operations) ♦ Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ) ♦ @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125°C Tight Parametric Distributions Consistent Lot−to−Lot Pb−Free Package is Available* http://onsemi.com POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 35 AND 75 WATTS ♦ • • • TO−220AB CASE 221A−09 STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 400 Vdc Collector−Base Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 9.0 Vdc IC ICM 5.0 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 75 0.6 W W/_C TJ, Tstg −65 to 150 _C Collector Current − Continuous − Peak (Note 1) Operating and Storage Temperature 1 2 3 MARKING DIAGRAM BUL45G THERMAL CHARACTERISTICS Characteristics AY WW Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. BUL45 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUL45 BUL45G Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 1 Publication Order Number: BUL45/D BUL45 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) ICES − − − − 10 100 mAdc Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO − − 100 mAdc − − 0.84 0.89 1.2 1.25 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (IC = 2.0 Adc, IB = 0.4 Adc) VBE(sat) Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (TC = 125°C) VCE(sat) − − 0.175 0.150 0.25 − Vdc Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc) (TC = 125°C) VCE(sat) − − 0.25 0.275 0.4 − Vdc hFE 14 − 7.0 5.0 10 − 32 14 12 22 34 − − − − − fT − 12 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 50 75 pF Input Capacitance (VEB = 8.0 Vdc) Cib − 920 1200 pF − − 1.75 4.4 − − − − 0.5 1.0 − − (TC = 125°C) − − 1.85 6.0 − − (TC = 125°C) − − 0.5 1.0 − − DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) (TC = 125°C) (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 125°C) (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.0 ms 3.0 ms 1.0 ms 3.0 ms (TC = 125°C) (TC = 125°C) VCE (Dyn sat) Vdc SWITCHING CHARACTERISTICS: Resistive Load Turn−On Time (IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc Pulse Width = 20 ms, (TC = 125°C) ton − − 75 120 110 − ns Turn−Off Time Duty Cycle < 20% VCC = 300 V (TC = 125°C) toff − − 2.8 3.5 3.5 − ms SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 mH, Vclamp = 300 Vdc) Fall Time (IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc) tfi 70 − − 200 170 − ns tsi 2.6 − − 4.2 3.8 − ms tc − − 230 400 350 − ns tfi − − 110 100 150 − ns tsi − − 1.1 1.5 1.7 − ms tc − − 170 170 250 − ns (IC = 2.0 Adc, IB1 = 250 mAdc IB2 = 2.0 Adc) (TC = 125°C) tfi − 80 120 ns Storage Time (TC = 125°C) tsi − 0.6 0.9 ms Crossover Time (TC = 125°C) tc − 175 300 ns (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 1.0 Adc, IB1 = 100 mAdc IB2 = 0.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time http://onsemi.com 2 BUL45 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V TJ = 125°C TJ = −20°C 10 1 0.01 0.10 1.00 VCE = 5 V TJ = 25°C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 25°C TJ = 125°C TJ = −20°C 10 1 0.01 10.00 0.10 1.00 10.00 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain at @ 5 Volts 2.0 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 1.5 1 A 1.5 2A A 1.0 3A 4A 5A 6A 0.5 1.0 IC/IB = 10 0.1 TJ = 25°C TJ = 125°C IC/IB = 5 IC = 0.5 A 0 0.01 0.10 1.00 0.01 0.01 10.00 1.00 10.00 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector−Emitter Saturation Region Figure 4. Collector−Emitter Saturation Voltage 1.1 10000 C, CAPACITANCE (pF) 1.0 VBE , VOLTAGE (VOLTS) 0.10 0.9 0.8 0.7 0.6 TJ = 25°C Cib 1000 Cob 100 10 TJ = 125°C IC/IB = 10 IC/IB = 5 0.5 0.4 0.01 TJ = 25°C f = 1 MHz 0.10 1.00 1 10.00 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 3 1000 BUL45 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1200 1000 TJ = 25°C TJ = 125°C 800 2000 IC/IB = 10 600 400 500 IC/IB = 5 0 0 1 2 3 4 5 6 7 0 8 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 3500 IC/IB = 5 2500 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 2000 1500 1000 TJ = 25°C TJ = 125°C 0 1 2500 8 IB(off) = IC/2 LC = 200 mH VZ = 300 V VCC = 15 V TJ = 25°C TJ = 125°C 3000 t si , STORAGE TIME (ns) 3000 500 7 IC, COLLECTOR CURRENT (AMPS) 3500 t, TIME (ns) IC/IB = 10 1500 1000 200 0 IB(off) = IC/2 VCC = 300 V PW = 20 ms TJ = 25°C TJ = 125°C IC/IB = 5 2500 t, TIME (ns) t, TIME (ns) 3000 IB(off) = IC/2 VCC = 300 V PW = 20 ms IC = 1 A 2000 1500 1000 IC/IB = 10 2 3 500 5 4 IC = 2 A 3 4 5 6 7 8 9 10 11 12 13 14 IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 300 15 200 250 tc tc 150 t, TIME (ns) t, TIME (ns) 200 150 100 100 VCC = 15 V IB(off) = IC/2 LC = 200 mH VZ = 300 V 50 0 0 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 50 tfi TJ = 25°C TJ = 125°C 2 3 4 IC, COLLECTOR CURRENT (AMPS) 0 5 Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 0 1 tfi TJ = 25°C TJ = 125°C 2 3 4 IC, COLLECTOR CURRENT (AMPS) 5 Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 http://onsemi.com 4 BUL45 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 150 300 140 t fi , FALL TIME (ns) 130 IC = 1 A 120 t c , CROSSOVER TIME (ns) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH TJ = 25°C TJ = 125°C 110 100 90 IC = 2 A 80 70 3 4 5 6 7 8 9 10 11 12 13 14 250 IC = 1 A 200 150 100 50 15 VCC = 15 V VZ = 300 V IB(off) = IC/2 LC = 200 mH TJ = 25°C TJ = 125°C 3 hFE, FORCED GAIN 4 5 6 7 IC = 2 A 8 9 10 11 12 13 14 15 hFE, FORCED GAIN Figure 13. Inductive Fall Time, tfi(hFE) Figure 14. Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 6 DC (BUL45) 10 5ms 1ms 50ms 10ms 1ms EXTENDED SOA 1.0 0.1 0.01 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 100 Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR 0.6 0.4 0 20 THERMAL DERATING 40 60 80 100 120 140 2 −5 V 1 VBE(off) = 0 V −1.5 V 400 700 500 600 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 800 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. SECOND BREAKDOWN DERATING 0.2 3 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 4 0 300 1000 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 5 160 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating http://onsemi.com 5 BUL45 5 4 10 VCE dyn 1 ms 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 ms 1 6 0 5 −1 VCLAMP tc 10% VCLAMP 10% IC 4 90% IB −2 1 ms −3 −4 3 ms 1 0 1 90% IB1 2 IB −5 0 IB 3 2 3 4 TIME 5 6 7 8 0 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3W 100 W 3W VCE PEAK VCE MTP8P10 RB1 MPF930 MUR105 IB1 Iout MPF930 +10 V IC PEAK 100 mF MTP8P10 IB A IB2 50 W RB2 MJE210 COMMON 150 W 3W 500 mF MTP12N10 1 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA −Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1.00 D = 0.5 0.2 0.10 0.1 P(pk) 0.05 t1 0.02 t2 SINGLE PULSE 0.01 0.01 DUTY CYCLE, D = t1/t2 0.10 1.00 RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 10.00 t, TIME (ms) Figure 20. Typical Thermal Response (ZqJC(t)) for BUL45 http://onsemi.com 6 100.00 1000.00 BUL45 The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built to 22 mF MUR150 385 V IC Q1 47 W 1W 470 kW D9 C5 D5 D3 C1 D10 demonstrate how well these devices operate. The circuit and detailed component list are provided below. T1A 400 V 0.1 mF 1000 V 15 mF C4 TUBE T1B D8 FUSE D1 D7 IC 0.1 mF D6 Q2 C3 1000 V 47 W MUR150 C2 CTN 1N4007 L 400 V 0.1 mF D4 100 V D2 10 nF C6 5.5 mH 1N5761 AC LINE 220 V 1W Components Lists Q1 D1 D2 D3 D5 D7 CTN L = = = = = = = = T1 = All resistors are 1/4 Watt, ±5% R1 = 470 kW R2 = R3 = 47 W R4 = R5 = 1 W (these resistors are optional, and might be replaced by a short circuit) C1 = 22 mF/385 V C2 = 0.1 mF C3 = 10 nF/1000 V C4 = 15 nF/1000 V C5 = C6 = 0.1 mF/400 V Q2 = BUL45 Transistor 1N4007 Rectifier 1N5761 Rectifier D4 = MUR150 D6 = MUR105 D8 = D9 = D10 = 1N400 47 W @ 25°C RM10 core, A1 = 400, B51 (LCC) 75 turns, wire ∅ = 0.6 mm FT10 toroid, T4A (LCC) Primary: 4 turns Secondaries: T1A: 4 turns Secondaries: T1B: 4 turns NOTES: 1. Since this design does not include the line input filter, it cannot be used “as−is” in a practical industrial circuit. 2. The windings are given for a 55 Watt load. For proper operation they must be re−calculated with any other loads. Figure 21. Application Example http://onsemi.com 7 BUL45 PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BUL45/D