CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature drift. A third terminal allows the reference voltage to be adjusted ±5.0% to calibrate out system errors. In many applications, the CS1009GZ can be used as a pin–to–pin replacement of the LT1009CZ and the LM136Z–2.5 with the external trim network eliminated. http://onsemi.com SO–8 D SUFFIX CASE 751 8 1 Features • 0.2% Initial Tolerance Max. • Guaranteed Temperature Stability • Maximum 0.6 Ω Dynamic Impedance • Wide Operating Current Range • Directly Interchangeable with LT1009 and LM136 for Improved Performance • No Adjustments Needed for Minimum Temperature Coefficient • Meets Mil Std 883C ESD Requirements TO–92 Z SUFFIX CASE 29 1 2 3 PIN CONNECTIONS AND MARKING DIAGRAM NC 1 1009 ALYW NC NC 8 GND NC NC VREF ADJ. PIN 5.0 V–35 V 1009 YWW 3.6 kΩ Pin 1. ADJ. PIN 2. VREF 3. GND VREF ADJ 1 10 kΩ∗ TRIM A WL, L YY, Y WW, W GND = Assembly Location = Wafer Lot = Year = Work Week *±5.0% Trim Range Figure 1. Application Diagram ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 6 1 Package Shipping CS1009GD8 SO–8 95 Units/Rail CS1009GDR8 SO–8 2500 Tape & Reel CS1009GZ3 TO–92 2000 Units CS1009GZR3 TO–92 2000 Tape & Reel Publication Order Number: CS1009/D CS1009 VREF P3 10 pF 15 pF N14 TRIM P2 P1 N16 14 kΩ 20 kΩ 20 pF 20 kΩ 10.15 kΩ 63 kΩ N7 N2 N8 N12 N13 30 kΩ N1 N4 N3 ADJ N10 N9 N5 N6 1.14 kΩ SUBSTRATE GND Figure 2. Block Diagram http://onsemi.com 2 N11 1.14 kΩ 6.785 kΩ D1 N15 CS1009 MAXIMUM RATINGS* Rating Value Unit Reverse Current 20 mA Forward 10 mA Operating Temperature Range –40 to 105 °C Storage Temperature Range –65 to +150 °C 260 peak 230 peak °C °C Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Note 2) 1. 10 second maximum 2. 60 second maximum above 183°C. *The maximum package power dissipation must be observed. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.) Test Conditions Characteristic Min Typ Max Unit Reverse Breakdown Voltage IR = 1.0 mA 2.492 2.500 2.508 V Reverse Breakdown Voltage 0°C ≤ TA ≤ 105°C 2.492 2.500 2.508 V Reverse Breakdown Voltage –40°C ≤ TA ≤ °C 2.480 2.500 2.508 V Reverse Breakdown Voltage Change with Current 400 µA ≤ IR ≤ 10 mA – – 2.6 3.0 10 12 mV mV Reverse Dynamic Impedance IR = 1.0 mA – – 0.2 0.4 1.0 1.4 Ω Ω Temperature Stability Avgerage Temperature Coefficient 0°C ≤ TA ≤ 70°C, Note 3 0°C ≤ TA ≤ 70°C, Note 3 – – – – – – mV ppm/°C Long Term Stabilty TA = 25°C ±0.1 C, IR = 1.0 mA – 20 – ppm/kHr † Denotes the specifications which apply over full operating temperature range. 3. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. TYPICAL PERFORMANCE CHARACTERISTICS 5 REVERSE VOLTAGE CHANGE (mV) REVERSE CURRENT (A) 10–1 10–2 10–3 10–4 10–5 0.5 TJ = 25°C 1.0 1.4 1.8 REVERSE VOLTAGE (V) 2.6 2.2 4 3 2 1 0 0 Figure 3. Reverse Current vs. Reverse Voltage 4 8 12 16 REVERSE VOLTAGE (V) Figure 4. Change in Reverse Voltage vs. Reverse Current http://onsemi.com 3 20 100 TJ = 25°C DYNAMIC IMPEDANCE (Ω) FORWARD VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 1.0 0.1 10 10 100 1.0 k 10 k FREQUENCY (Hz) FORWARD CURRENT (mA) Figure 5. Forward Voltage vs. Forward Current 100 k Figure 6. Dynamic Impedance vs. Frequency 250 IR = ImA TJ = 25°C VOLTAGE SWING (V) 0 200 150 2.5 2.0 1.5 5.0 k 1.0 0.5 0 INPUT OUTPUT 100 10.0 4.0 0 50 10 100 1.0 k FREQUENCY (Hz) 10 k 100 k 1 TIME (µs) 0 Figure 7. Zener Noise Voltage vs. Frequency Figure 8. Response Time 2.520 REFERENCE VOLTAGE (V) NOISE (nV/√HZ) ( ) CS1009 2.510 2.500 2.490 –40 –30 0 25 35 70 105 Figure 9. Reference Voltage vs. Temperature http://onsemi.com 4 20 CS1009 PACKAGE DIMENSIONS SO–8 D SUFFIX CASE 751–07 ISSUE V –X– A 8 5 0.25 (0.010) S B 1 M Y M 4 K –Y– G C N DIM A B C D G H J K M N S X 45 SEATING PLANE –Z– 0.10 (0.004) H M D 0.25 (0.010) M Z Y X S J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 TO–92 Z SUFFIX CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- PACKAGE THERMAL DATA SO–8 Parameter TO–92 Unit RΘJC Typical 45 – °C/W RΘJA Typical 165 170 °C/W http://onsemi.com 5 CS1009 Notes http://onsemi.com 6 CS1009 Notes http://onsemi.com 7 CS1009 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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