ONSEMI M1MA151WAT1G

M1MA151WAT1,
M1MA152WAT1
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
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3 ANODE
Features
• Fast trr, < 10 ns
• Low CD, < 15 pF
• Pb−Free Packages are Available
2 CATHODE 1
MAXIMUM RATINGS (TA = 25°C)
Symbol
Rating
Reverse Voltage
Value
Unit
40
80
Vdc
40
80
Vdc
100
150
mAdc
225
340
mAdc
500
750
mAdc
Symbol
Max
Unit
PD
200
mW
SC−59
CASE 318D
VR
M1MA151WAT1
M1MA152WAT1
Peak Reverse Voltage
1
VRM
M1MA151WAT1
M1MA152WAT1
Forward Current
MARKING DIAGRAM
IF
Single
Dual
Peak Forward Current
Mx M G
G
IFM
Single
Dual
Peak Forward Surge Current
Single
Dual
IFSM
(Note 1)
1
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
Mx = Device Code
x = N for 151
O for 152
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
M1MA151WAT1
SC−59
3000/Tape & Reel
SC−59
(Pb−Free)
3000/Tape & Reel
SC−59
3000/Tape & Reel
SC−59
(Pb−Free)
3000/Tape & Reel
M1MA151WAT1G
M1MA152WAT1
M1MA152WAT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 9
1
Publication Order Number:
M1MA151WAT1/D
M1MA151WAT1, M1MA152WAT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Characteristic
Condition
Min
Max
Unit
VR = 35 V
VR = 75 V
−
0.1
mAdc
IF = 100 mA
−
1.2
Vdc
IR = 100 mA
40
80
−
Vdc
CD
VR = 0, f = 1.0 MHz
−
15
pF
trr
(Note 2)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
−
10
ns
Reverse Voltage Leakage Current
IR
M1MA151WAT1
M1MA152WAT1
Forward Voltage
VF
Reverse Breakdown Voltage
VR
M1MA151WAT1
M1MA152WAT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
t
IF
trr
t
10%
A
RL
Irr = 0.1 IR
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
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2
IF = 10 mA
VR = 6 V
RL = 100 W
M1MA151WAT1, M1MA152WAT1
IF, FORWARD CURRENT (mA)
100
10
TA = 85°C
TA = 25°C
1.0
TA = −40°C
0.1
0.2
0.6
0.4
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
IR , REVERSE CURRENT (μA)
10
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
TA = 25°C
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.75
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
M1MA151WAT1, M1MA152WAT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
3
HE
2
DIM
A
A1
b
c
D
E
e
L
HE
E
1
b
e
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
M1MA151WAT1/D