ONSEMI MJD6039T4

MJD6039
Darlington Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Package is Available
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SILICON
POWER TRANSISTORS
4 AMPERES,
80 VOLTS, 20 WATTS
4
1 2
3
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Max
Unit
VCEO
80
Vdc
Collector−Base Voltage
VCB
80
Vdc
Emitter−Base Voltage
VEB
5
Vdc
IC
4
8
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
W
0.014
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
71.4
°C/W
Collector Current
Collector Current
− Continuous
− Peak
THERMAL CHARACTERISTICS
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
MARKING DIAGRAM
YWW
J
6039G
Y
WW
J6039
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD6039T4
MJD6039T4G
Package
Shipping †
DPAK
2500 / Tape & Reel
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJD6039/D
MJD6039
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
80
−
Vdc
ICEO
−
10
mAdc
1000
500
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 2 Adc, VCE = 4 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
VCE(sat)
−
2.5
Vdc
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 4 Vdc)
VBE(on)
−
2.8
Vdc
Small−Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
−
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
100
DYNAMIC CHARACTERISTICS
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
RC SCOPE
t, TIME (s)
μ
TUT
V2
APPROX
+8 V
0
V1
APPROX
−12 V
4
VCC
−30 V
RB
51
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
D1
≈ 8 k ≈ 120
IB1 = IB2
TJ = 25°C
ts
2
tf
1
0.8
tr
0.6
0.4
+4V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 1. Switching Times Test Circuit
PNP
NPN
0.1
td @ VBE(off) = 0
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
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2
2
4
MJD6039
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.01
0.03
0.02
SINGLE
PULSE
0.01
0.01
0.02 0.03
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
TA TC
2.5 25
10
7
5
0.1ms
0.5ms
3
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Thermal Response
5ms
2
1ms
1
0.7
0.5
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
0.3
0.2
dc
0.1
1
2
3
5
7
10
20
30
50 70
100
2 20
TC
1.5 15
1 10
0.5
5
0
0
TA
SURFACE
MOUNT
25
50
75
100
T, TEMPERATURE (°C)
VCE, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
125
150
Figure 5. Power Derating
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on T J(pk) = 150°C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
TC = 25°C
C, CAPACITANCE (pF)
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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3
10
20
40
MJD6039
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
6k
4k
hFE , DC CURRENT GAIN
VCE = 3 V
TJ = 125°C
3k
25°C
2k
−55 °C
1k
800
600
400
300
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
TJ = 125°C
3
2.6
2.2
IC =
0.5 A
1A
2A
0.5
1
4A
1.8
1.4
1
0.6
0.1
0.2
2
5
10
20
IB, BASE CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
VBE(sat) @ IC/IB = 250
1.8
1.4
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
*APPLIED FOR IC/IB < hFE/3
0
25°C to 150°C
− 0.8
− 1.6
− 2.4
qVC for VCE(sat)
− 55°C to 25°C
− 3.2
−4
25°C to 150°C
qVC for VBE
− 4.8
0.04 0.06
0.1
25°C to 150°C
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (A)
μ
REVERSE
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
105
FORWARD
104
VCE = 30 V
NPN
MJD6039
TJ = 150°C
BASE
COLLECTOR
102
101
100
100
+ 0.8
TJ = 25°C
103
50
IC, COLLECTOR CURRENT (AMP)
2.2
V, VOLTAGE (VOLTS)
3.4
≈8k
100°C
25°C
10−1
−0.6 −0.4 −0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE−EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
≈ 60
EMITTER
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
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4
3
4
MJD6039
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D 2 PL
G
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJD6039/D