MMBT6521LT1 Amplifier Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 4.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W Collector Current — Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 PD RqJA 1 2 SOT−23 (TO −236) CASE 318 −08 STYLE 6 PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. RO M G G 1 RO = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6521LT1 MMBT6521LT1G Package Shipping† SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBT6521LT1/D MMBT6521LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 25 − 4.0 − − 0.5 − 10 150 300 − 600 − 0.5 − 3.5 − 3.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) V(BR)CEO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) − VCE(sat) Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz, 3.0 dB points @ = 10 Hz and 10 kHz) RS pF NF dB in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V 10 < t1 < 500 ms DUTY CYCLE = 2% 10 k −0.5 V <1.0 ns t1 +3.0 V +10.9 V 0 CS < 4.0 pF* −9.1 V 275 10 k < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 2. Turn−On Time Figure 3. Turn−Off Time http://onsemi.com 2 CS < 4.0 pF* MMBT6521LT1 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 10 mA 0.2 2.0 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10k Figure 5. Noise Current Figure 4. Noise Voltage NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5k 2.0 dB 2k 1k 500 200 100 50 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 3.0 dB 4.0 dB 6.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 10 dB 500 700 1k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 200 100 5.0 dB 8.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 200 100 50 30 Figure 7. Narrow Band, 1.0 kHz Figure 6. Narrow Band, 100 Hz 500k 3.0 dB en In K T RS 2.0 dB 3.0 dB 5.0 dB = Noise Voltage of the Transistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman’s Constant (1.38 x 10−23 j/°K) = Temperature of the Source Resistance (°K) = Source Resistance (Ohms) 8.0 dB 10 20 30 50 70 100 200 300 500 700 1k IC, COLLECTOR CURRENT (mA) Figure 8. Wideband http://onsemi.com 3 2 2 1ń2 S ) In RS Ǔ ǒen2 ) 4KTR 4KTRS MMBT6521LT1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55 °C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 10. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 40 Figure 11. Collector Characteristics 1.4 1.2 400 mA 60 0 20 IB = 500 mA 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) − 55°C to 25°C −0.8 25°C to 125°C −1.6 −2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 12. “On” Voltages qVB for VBE 0.2 − 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 13. Temperature Coefficients http://onsemi.com 4 50 100 MMBT6521LT1 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25°C f = 100 MHz TJ = 25°C f = 1.0 MHz 7.0 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 16. Current−Gain — Bandwidth Product Figure 17. Capacitance 20 hie , INPUT IMPEDANCE (k Ω ) 50 Figure 15. Turn−Off Time 10 hfe ≈ 200 @ IC = 1.0 mA 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE (m mhos) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 14. Turn−On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 18. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 19. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT6521LT1 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 21 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 20. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 21. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 20 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 20 by the steady state value RqJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 103 102 ICEO 101 ICBO AND 100 ICEX @ VBE(off) = 3.0 Vdc 10−1 10−2 −4 0 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 21. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25°C dc TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 10 ms 1.0 s dc TA = 25°C 20 4.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 20. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 22. http://onsemi.com 6 MMBT6521LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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