NL27WZ126 Dual Buffer with 3−State Outputs The NL27WZ126 is a high performance dual noninverting buffer operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • • http://onsemi.com Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5.0 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs and Outputs LVTTL Compatible − Interface Capability With 5.0 V TTL Logic with VCC = 3.0 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements 3−State OE Input is Active−High Replacement for NC7WZ126 Chip Complexity = 72 FETs Pb−Free Package is Available OE1 A1 Y2 GND 8 1 7 2 6 3 5 4 MARKING DIAGRAM 8 US8 US SUFFIX CASE 493 8 1 M2 M G G 1 M2 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. PIN ASSIGNMENT VCC OE2 Y1 A2 Pin Function 1 OE 2 A1 3 Y2 4 GND 5 A2 6 Y1 7 OE2 8 VCC Figure 1. Pinout (Top View) FUNCTION TABLE Input A1 OE1 1 EN A2 OE2 Y1 Y2 Figure 2. Logic Symbol Output OEn An Yn H H H H L L L X Z X = Don’t Care n = 1, 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 6 1 Publication Order Number: NL27WZ126/D NL27WZ126 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to )7.0 V IIK DC Input Diode Current VI < GND *50 mA IOK DC Output Diode Current VO < GND *50 mA IO DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias qJA 260 °C )150 °C Thermal Resistance (Note 1) 250 °C/W PD Power Dissipation in Still Air at 85°C 250 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate Min Max Unit 1.65 1.5 5.5 5.5 V (Note 5) 0 5.5 V (HIGH or LOW State) 0 5.5 V *40 )85 °C 0 0 0 20 10 5 ns/V Operating Data Retention Only VCC = 2.5 V $0.2 V VCC = 3.0 V $0.3 V VCC = 5.0 V $0.5 V 5. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level. http://onsemi.com 2 NL27WZ126 DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Condition (V) Min 0.7 VCC VIH High−Level Input Voltage 1.65 to 5.5 VIL Low−Level Input Voltage 1.65 to 5.5 VOH High−Level Output Voltage VIN = VIH IOH = 100 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 to 5.5 1.65 2.7 3.0 3.0 4.5 VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 100 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 to 5.5 1.65 2.7 3.0 3.0 4.5 Input Leakage Current VIN = VCC or GND IOFF Power Off−Output Leakage Current VOUT = 5.5 V ICC Quiescent Supply Current VIN = VCC or GND IOZ 3−State Output Leakage VIN = VIL or VIH 0 V v VOUT v 5.5 V IIN *405C v TA v 855C TA = 255C Typ Max Min 0.7 VCC 0.3 VCC VCC − 0.1 1.9 2.2 2.4 2.3 3.8 Max VCC 2.1 2.4 2.7 2.5 4.0 Unit V 0.3 VCC VCC − 0.1 1.9 2.2 2.4 2.3 3.8 V V 0.1 0.3 0.4 0.4 0.55 0.55 0.1 0.3 0.4 0.4 0.55 0.55 V 0 to 5.5 $0.1 $1.0 mA 0 1 10 mA 5.5 1 10 mA 1.65 to 5.5 $0.5 $5 mA 0.20 0.22 0.28 0.38 0.42 AC ELECTRICAL CHARACTERISTICS (tR = tF = 3.0 ns) VCC Symbol tPLH tPHL Parameter Propagation Delay AN to YN (Figures 3 and 4, Table 1) Condition *405C v TA v 855C TA = 255C (V) Min Typ Max Min Max Unit ns RL = 1 MW CL = 15 pF 1.8 $ 0.15 2.5 $ 0.2 2.0 1.0 12 7.5 2.0 1.0 13 8 RL = 1 MW CL = 15 pF 3.3 $ 0.3 0.8 5.2 0.8 5.5 RL = 500 W CL = 50 pF 1.2 5.7 1.2 6.0 RL = 1 MW CL = 15 pF 0.5 4.5 0.5 4.8 RL = 500 W CL = 50 pF 0.8 5.0 0.8 5.3 5.0 $ 0.5 tOSLH tOSHL Output to Output Skew (Note 6) RL = 500 W CL = 50 pF 3.3 $ 0.3 1.0 1.0 RL = 500 W CL = 50 pF 5.0 $ 0.5 0.8 0.8 tPZH tPZL Output Enable Time (Figures 5, 6 and 7, Table 1) RL = 250 W CL = 50 pF 1.8 $ 0.15 2.5 $ 0.2 3.0 1.8 14 8.5 3.0 1.8 15 9.0 3.3 $ 0.3 1.2 6.2 1.2 6.5 5.0 $ 0.5 0.8 5.5 0.8 5.8 1.8 $ 0.15 2.5 $ 0.2 2.5 1.5 12 8.0 2.5 1.5 13 8.5 3.3 $ 0.3 0.8 5.7 0.8 6.0 5.0 $ 0.5 0.3 4.7 0.3 5.0 tPHZ tPLZ Output Enable Time (Figures 5, 6 and 7, Table 1) RL and R1= 500 W CL = 50 pF ns ns ns 6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. This specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. http://onsemi.com 3 NL27WZ126 CAPACITIVE CHARACTERISTICS Symbol CIN Parameter Condition Typical Unit Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 7) 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 9 pF 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 11 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. tf = 3 ns tf = 3 ns 90% INPUT A and B Vmi OE = GND VCC 90% INPUT Vmi 10% 10% tPHL OUTPUT CL * GND RL tPLH VOH OUTPUT Y Vmo Vmo *Includes all probe and jig capacitance. A 1 MHz square input wave is recommended for propagation delay tests. VOL Figure 3. Switching Waveform Figure 4. tPLH or tPHL 2.7 V Vmi Vmi OE 0V tPZH tPHZ VOH − 0.3 V Vmo On VCC ≈0V tPZL tPLZ ≈ 3.0 V On Vmo VOL + 0.3 V GND Figure 5. AC Output Enable and Disable Waveform http://onsemi.com 4 NL27WZ126 Table 1. Output Enable and Disable Times tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 nsv VCC Symbol 3.3 V $ 0.3 V 2.7 V 2.5 V $ 0.2 V Vmi 1.5 V 1.5 V VCC/2 Vmo 1.5 V 1.5 V VCC/2 2 VCC INPUT INPUT R1 = 500 W VCC OUTPUT OUTPUT RL = 500 W CL = 50 pF CL = 50 pF RL = 250 W A 1 MHz square input wave is recommended for propagation delay tests. A 1 MHz square input wave is recommended for propagation delay tests. Figure 6. tPZL or tPLZ Figure 7. tPZH or tPHZ DEVICE ORDERING INFORMATION Device Nomenclature Logic Circuit Indicator No. of Gates per Package Temp Range Identifier Technology Device Function Package Suffix Package Type Tape and Reel Size† NL27WZ126US NL 2 7 WZ 126 US US8 178 mm, 3000 Units NL27WZ126USG NL 2 7 WZ 126 USG US8 (Pb−Free) 178 mm, 3000 Units Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NL27WZ126 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493−02 ISSUE B −X− A 8 −Y− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). J DETAIL E B L 1 4 R S G P U C −T− SEATING PLANE D 0.10 (0.004) M H 0.10 (0.004) T K N R 0.10 TYP T X Y V M F DETAIL E DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC SOLDERING FOOTPRINT* 3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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