TI TPS73733DCQR

TPS737xx
www.ti.com.................................................................................................................................................... SBVS067I – JANUARY 2006 – REVISED MARCH 2009
1A Low-Dropout Regulator
with Reverse Current Protection
FEATURES
DESCRIPTION
1
• Stable with 1.0µF or Larger Ceramic Output
Capacitor
• Input Voltage Range: 2.2V to 5.5V
• Ultra-Low Dropout Voltage: 130mV typ at 1A
• Excellent Load Transient Response—Even
With Only 1.0µF Output Capacitor
• NMOS Topology Delivers Low Reverse
Leakage Current
• 1.0% Initial Accuracy
• 3% Overall Accuracy Over Line, Load, and
Temperature
• Less Than 20nA typical IQ in Shutdown Mode
• Thermal Shutdown and Current Limit for Fault
Protection
• Available in Multiple Output Voltage Versions
– Adjustable Output: 1.20V to 5.5V
– Custom Outputs Available Using Factory
Package-Level Programming
2
APPLICATIONS
•
•
•
Point of Load Regulation for DSPs, FPGAs,
ASICs, and Microprocessors
Post-Regulation for Switching Supplies
Portable/Battery-Powered Equipment
The TPS737xx family of linear low-dropout (LDO)
voltage regulators uses an NMOS pass element in a
voltage-follower configuration. This topology is
relatively insensitive to output capacitor value and
ESR, allowing a wide variety of load configurations.
Load transient response is excellent, even with a
small 1.0µF ceramic output capacitor. The NMOS
topology also allows very low dropout.
The TPS737xx family uses an advanced BiCMOS
process to yield high precision while delivering very
low dropout voltages and low ground pin current.
Current consumption, when not enabled, is under
20nA and ideal for portable applications. These
devices are protected by thermal shutdown and
foldback current limit.
DRB PACKAGE
3mm x 3mm SON
(TOP VIEW)
OUT
1
8
IN
N/C
2
7
N/C
NR/FB
3
6
N/C
GND
4
5
EN
DCQ PACKAGE
SOT223
(TOP VIEW)
6
Optional
VIN
IN
OUT
EN
OFF
GND
VOUT
1.0mF
TPS737xx
TAB IS GND
1
2
3
4
5
FB
IN
ON
GND
EN
OUT NR/FB
Typical Application Circuit
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2009, Texas Instruments Incorporated
TPS737xx
SBVS067I – JANUARY 2006 – REVISED MARCH 2009.................................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
VOUT (2)
PRODUCT
XX is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable (3)).
YYY is package designator.
Z is package quantity.
TPS737xxyyyz
(1)
(2)
(3)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
Most output voltages of 1.25V and 1.3V to 5.0V in 100mV increments are available on a quick-turn basis using innovative factory
package-level programming. Minimum order quantities apply; contact factory for details and availability.
For fixed 1.20V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted (1)
PARAMETER
TPS737xx
UNIT
VIN range
–0.3 to +6.0
V
VEN range
–0.3 to +6.0
V
VOUT range
–0.3 to +5.5
V
VNR, VFB range
–0.3 to +6.0
V
Peak output current
Internally limited
Output short-circuit duration
Indefinite
Continuous total power dissipation
See Dissipation Ratings Table
Junction temperature range, TJ
–55 to +150
°C
Storage temperature range
–65 to +150
°C
ESD rating, HBM
2
kV
ESD rating, CDM
500
V
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
POWER DISSIPATION RATINGS (1)
BOARD
PACKAGE
RθJC
RθJA
DERATING FACTOR
ABOVE TA = +25°C
TA ≤ +25°C
POWER RATING
TA = +70°C
POWER RATING
TA = +85°C
POWER RATING
Low-K (2)
DCQ
15°C/W
53°C/W
18.9mW/°C
1.89W
1.04W
0.76W
High-K (3)
DCQ
15°C/W
45°C/W
22.2mW/°C
2.22W
1.22W
0.89W
High-K (3) (4)
DRB
1.2°C/W
40°C/W
25.0mW/°C
2.50W
1.38W
1.0W
(1)
(2)
(3)
(4)
2
See Power Dissipation in the Applications section for more information related to thermal design.
The JEDEC Low-K (1s) board design used to derive this data was a 3-inch × 3-inch, 2-layer board with 2-ounce copper traces on top of
the board.
The JEDEC High-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1-ounce internal power and
ground planes and 2-ounce copper traces on the top and bottom of the board.
Based on preliminary thermal simulations.
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ELECTRICAL CHARACTERISTICS
Over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 1.0V (1), IOUT = 10mA, VEN = 2.2V, and
COUT = 2.2µF, unless otherwise noted. Typical values are at TJ = +25°C.
TPS737xx
PARAMETER
TEST CONDITIONS
Input voltage range (1), (2)
VIN
VFB
TYP
MAX
2.2
5.5
Internal reference
(TPS73701-DCQ)
TJ = +25°C
1.198
1.2
1.210
Internal reference
(TPS73701-DRB)
TJ = +25°C
1.192
1.2
1.216
Nominal
VOUT
Accuracy (1), (4)
over VIN, IOUT,
and T
Line regulation (1)
VFB
5.5 – VDO
TJ = +25°C
–1.0
+1.0
5.36V < VIN < 5.5V, VOUT = 5.08V,
10mA < IOUT < 800mA,
–40C < TJ < +85°C, TPS73701DCQ
–2.0
+2.0
VOUT + 0.5V ≤ VIN ≤ 5.5V;
10mA ≤ IOUT ≤ 1A
–3.0
VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V
±0.5
0.002
10mA ≤ IOUT ≤ 1A
0.0005
Load regulation
VDO
Dropout voltage (5)
(VIN = VOUT(nom) – 0.1V)
IOUT = 1A
130
ZO(DO)
Output impedance in dropout
2.2V ≤ VIN ≤ VOUT + VDO
0.25
ICL
Output current limit
VOUT = 0.9 × VOUT(nom)
ISC
Short-circuit current
VOUT = 0V
IREV
Reverse leakage current (6) (–IIN)
500
mV
Ω
2.2
A
0.1
µA
400
Shutdown current (IGND)
FB pin current (TPS73701)
PSRR
Power-supply rejection ratio
(ripple rejection)
VN
Output noise voltage
BW = 10Hz – 100KHz
COUT = 10µF
tSTR
Startup time
VOUT = 3V, RL = 30Ω, COUT = 1µF
VEN(HI)
EN pin high (enabled)
VEN(LO)
EN pin low (shutdown)
IEN(HI)
EN pin current (enabled)
(3)
(4)
(5)
(6)
%/mA
IOUT = 10mA (IQ)
IFB
(1)
(2)
%/V
VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT
ISHDN
Operating junction temperature
1.6
%
mA
GND pin current
TJ
1.05
V
450
IGND
Thermal shutdown temperature
V
+3.0
0.01
1mA ≤ IOUT ≤ 1A
ΔVOUT%/ΔIOUT
TSD
UNIT
V
Output voltage range
(TPS73701) (3)
ΔVOUT%/ΔVIN
MIN
IOUT = 1A
µA
1300
VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5
20
0.1
f = 100Hz, IOUT = 1A
58
f = 10kHz, IOUT = 1A
37
nA
0.6
µA
dB
µVRMS
27 × VOUT
µs
600
1.7
VIN
V
0
0.5
V
VEN = 5.5V
20
Shutdown, temperature increasing
+160
Reset, temperature decreasing
+140
–40
nA
°C
+125
°C
Minimum VIN = VOUT + VDO or 2.2V, whichever is greater.
For VOUT(nom) < 1.6V, when VIN ≤ 1.6V, the output will lock to VIN and may result in an over-voltage condition on the output. To avoid this
situation, disable the device before powering down VIN.
TPS73701 is tested at VOUT = 1.2V.
Tolerance of external resistors not included in this specification.
VDO is not measured for fixed output versions with VOUT(nom) < 2.3V since minimum VIN = 2.2V.
Fixed-voltage versions only; refer to the Applications section for more information.
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FUNCTIONAL BLOCK DIAGRAMS
IN
4MHz
Charge Pump
EN
Thermal
Protection
Ref
Servo
27kΩ
Bandgap
Error
Amp
Current
Limit
OUT
8kΩ
GND
R1
R1 + R2 = 80kΩ
R2
NR
Figure 1. Fixed Voltage Version
IN
Table 1. Standard 1%
Resistor Values for
Common Output Voltages
VO
4MHz
Charge Pump
EN
Thermal
Protection
Ref
Servo
27kΩ
Bandgap
Error
Amp
GND
8kΩ
R2
1.2V
Short
Open
1.5V
23.2kΩ
95.3kΩ
1.8V
28.0kΩ
56.2kΩ
2.5V
39.2kΩ
36.5kΩ
2.8V
44.2kΩ
33.2kΩ
3.0V
46.4kΩ
30.9kΩ
3.3V
52.3kΩ
30.1kΩ
NOTE: VOUT = (R1 + R2)/R2 × 1.204;
R1R2 ≅ 19kΩ for best
accuracy.
OUT
Current
Limit
R1
80kΩ
R1
FB
R2
Figure 2. Adjustable Voltage Version
4
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PIN CONFIGURATIONS
DCQ PACKAGE
SOT223-6
(TOP VIEW)
6
1
IN
2
DRB PACKAGE
3mm x 3mm SON
(TOP VIEW)
TAB IS GND
3
4
5
OUT
1
8
IN
N/C
2
7
N/C
NR/FB
3
6
N/C
GND
4
5
EN
GND
EN
OUT NR/FB
Table 1. Pin Descriptions
PIN
NAME
SOT223
(DCQ)
PIN NO.
3×3 SON
(DRB)
PIN NO.
IN
1
8
GND
3, 6
4, Pad
EN
5
5
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into
shutdown mode. Refer to the Shutdown section under Applications Information for more details. EN
must not be left floating and can be connected to IN if not used.
NR
4
3
Fixed voltage versions only—connecting an external capacitor to this pin bypasses noise generated
by the internal bandgap, reducing output noise to very low levels.
FB
4
3
Adjustable voltage version only—this is the input to the control loop error amplifier, and is used to set
the output voltage of the device.
Regulator output. A 1.0µF or larger capacitor of any type is required for stability.
OUT
2
1
NC
—
2, 6, 7
DESCRIPTION
Unregulated input supply
Ground
Not connected
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TYPICAL CHARACTERISTICS
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2µF, unless otherwise
noted.
LOAD REGULATION
0.5
LINE REGULATION
Referred to IOUT = 10mA
0.4
Referred to VIN = VOUT + 1.0V at IOUT = 10mA
-40°C
+25°C
+125°C
0.2
0.1
0
-0.1
-0.2
Change in VOUT (%)
0.15
0.3
Change in VOUT (%)
0.20
-0.3
0.10
0
-0.05
-40°C
-0.10
-0.15
-0.4
-0.20
-0.5
0
100 200
300 400
500 600 700
0
800 900 1000
0.5
1.0
1.5
2.0
Figure 3.
3.5
4.0
4.5
DROPOUT VOLTAGE vs TEMPERATURE
200
VOUT = 2.5V
180
3.0
Figure 4.
DROPOUT VOLTAGE vs OUTPUT CURRENT
200
2.5
VIN - VOUT (V)
IOUT (mA)
180
160
160
+125°C
+25°C
140
120
140
VDO (mV)
VDO (mV)
+25°C
+125°C
0.05
100
80
120
100
80
60
60
-40°C
40
40
20
20
0
0
0
100 200 300
400 500
600 700
800 900 1000
-50
-25
0
25
50
75
IOUT (mA)
Temperature (°C)
Figure 5.
Figure 6.
OUTPUT VOLTAGE HISTOGRAM
100
125
150
DROPOUT VOLTAGE DRIFT HISTOGRAM
30
18
IOUT = 10mA
16
IOUT = 10mA
25
Percent of Units (%)
Percent of Units (%)
14
20
15
10
12
10
8
6
4
5
2
0
6
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
VOUT Error (%)
Worst Case dVOUT/dT (ppm/°C)
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2µF, unless otherwise
noted.
GROUND PIN CURRENT vs OUTPUT CURRENT
GROUND PIN CURRENT vs TEMPERATURE
3000
2500
IOUT = 1A
VIN = 5.0V
2500
2000
IGND (mA)
VIN = 5.0V
IGND (mA)
1500
VIN = 3.3V
2000
VIN = 3.3V
1500
1000
1000
VIN = 2.2V
VIN = 2.2V
500
500
0
0
0
200
400
600
800
-50
1000
25
50
75
Figure 9.
Figure 10.
GROUND PIN CURRENT IN SHUTDOWN
vs TEMPERATURE
CURRENT LIMIT vs VOUT
(FOLDBACK)
100
125
2.0
VENABLE = 0.5V
VIN = VOUT + 0.5V
1.8
ICL
1.6
Current Limit (mA)
IGND (mA)
0
Temperature (°C)
1
0.1
1.4
1.2
1.0
0.8
0.6
ISC
0.4
0.2
0.01
-50
VOUT = 3.3V
0
-25
0
25
50
75
100
125
0
0.5
1.0
1.5
2.0
Temperature (°C)
VOUT (V)
Figure 11.
Figure 12.
CURRENT LIMIT vs VIN
2.5
3.0
3.5
CURRENT LIMIT vs TEMPERATURE
2.0
2.0
1.9
1.9
1.8
1.8
1.7
1.7
Current Limit (A)
Current Limit (A)
-25
IOUT (mA)
1.6
1.5
1.4
1.3
1.6
1.5
1.4
1.3
1.2
1.2
1.1
1.1
1.0
VOUT = 1.2V
1.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50
-25
0
25
50
VIN (V)
Temperature (°C)
Figure 13.
Figure 14.
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75
100
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TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2µF, unless otherwise
noted.
PSRR (RIPPLE REJECTION) vs FREQUENCY
PSRR (RIPPLE REJECTION) vs VIN – VOUT
90
40
IOUT = 100mA
COUT = Any
70
IOUT = 1mA
COUT = 1mF
35
30
IOUT = 1mA
COUT = 10mF
60
50
IO = 100mA
CO = 1mF
IOUT = 1mA
COUT = Any
40
30
20
25
PSRR (dB)
Ripple Rejection (dB)
80
20
15
10
Frequency = 10kHz
COUT = 10mF
VOUT = 2.5V
IOUT = 100mA
10
IOUT = 100mA
COUT = 10mF
5
0
0
10
100
1k
10k
100k
1M
0
10M
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Frequency (Hz)
VIN - VOUT (V)
Figure 15.
Figure 16.
NOISE SPECTRAL DENSITY
TPS73701
RMS NOISE VOLTAGE vs CFB
1.8
2.0
60
1
55
COUT = 1mF
0.1
VN (RMS)
eN (mV/ÖHz)
50
COUT = 10mF
45
40
35
VOUT = 2.5V
COUT = 0mF
R1 = 39.2kW
10Hz < Frequency < 100kHz
30
25
IOUT = 150mA
20
10p
0.01
10
100
1k
10k
100k
100p
1n
10n
CFB (F)
Frequency (Hz)
Figure 17.
Figure 18.
RMS NOISE VOLTAGE vs COUT
RMS NOISE VOLTAGE vs CNR
60
140
50
120
VOUT = 5.0V
VOUT = 5.0V
100
30
VN (RMS)
VN (RMS)
40
VOUT = 3.3V
20
0
0.1
8
20
CNR = 0.01mF
10Hz < Frequency < 100kHz
0
1
10
VOUT = 3.3V
60
40
VOUT = 1.5V
10
80
VOUT = 1.5V
COUT = 0mF
10Hz < Frequency < 100kHz
1p
10p
100p
COUT (mF)
CNR (F)
Figure 19.
Figure 20.
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1n
10n
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TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2µF, unless otherwise
noted.
TPS73733
LOAD TRANSIENT RESPONSE
TPS73733
LINE TRANSIENT RESPONSE
CNR = 10nF
CNR = 10nF
COUT = 10mF
VOUT
200mV/div
COUT = 10mF
100mV/div
VOUT
1A
5.3V
10mA
4.3V
IOUT
VIN
10ms/div
10ms/div
Figure 21.
Figure 22.
TPS73701
TURN-ON RESPONSE
TPS73701
TURN-OFF RESPONSE
RL = 20W
COUT = 10mF
VOUT
RL = 20W
COUT = 1mF
1V/div
RL = 20W
COUT = 1mF
1V/div
RL = 20W
COUT = 10mF
VOUT
2V
2V
VEN
1V/div
1V/div
0V
0V
VEN
100ms/div
100ms/div
Figure 23.
Figure 24.
TPS73701, VOUT = 3.3V
POWER-UP/POWER-DOWN
IENABLE vs TEMPERATURE
10
6
5
4
VIN
VOUT
IENABLE (nA)
Volts
3
2
1
1
0.1
0
-1
-2
50ms/div
0.01
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 25.
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Figure 26.
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TYPICAL CHARACTERISTICS (continued)
For all voltage versions at TJ = +25°C, VIN = VOUT(nom) + 1.0V, IOUT = 10mA, VEN = 2.2V, and COUT = 2.2µF, unless otherwise
noted.
TPS73701
IFB vs TEMPERATURE
60
160
55
140
50
120
45
100
IFB (nA)
VN (VRMS)
TPS73701
RMS NOISE VOLTAGE vs CFB
40
60
35
30
25
80
VOUT = 2.5V
COUT = 0mF
R1 = 39.2kW
10Hz < Frequency < 100kHz
20
10p
100p
40
20
1n
10n
0
-50
-25
0
25
50
75
100
CFB (F)
Temperature (°C)
Figure 27.
Figure 28.
TPS73701
LOAD TRANSIENT, ADJUSTABLE VERSION
TPS73701
LINE TRANSIENT, ADJUSTABLE VERSION
CFB = 10nF
R1 = 39.2kW
COUT = 10mF
100mV/div
VOUT
COUT = 10mF
100mV/div
125
VOUT = 2.5V
CFB = 10nF
VOUT
4.5V
250mA
3.5V
10mA
10ms/div
Figure 29.
10
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IOUT
VIN
5ms/div
Figure 30.
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APPLICATION INFORMATION
The TPS737xx belongs to a family of new generation
LDO regulators that use an NMOS pass transistor to
achieve ultra-low-dropout performance, reverse
current blockage, and freedom from output capacitor
constraints. These features combined with an enable
input make the TPS737xx ideal for portable
applications. This regulator family offers a wide
selection of fixed output voltage versions and an
adjustable output version. All versions have thermal
and over-current protection, including foldback
current limit.
Figure 31 shows the basic circuit connections for the
fixed voltage models. Figure 32 gives the connections
for the adjustable output version (TPS73701).
VIN
IN
VOUT
OUT
TPS737xx
EN
GND
OFF
Figure 31. Typical Application Circuit for
Fixed-Voltage Versions
VIN
IN
Output capacitor
must be ³ 1.0mF.
TPS73701
EN
OFF
VOUT
OUT
GND
R1
CFB
FB
ON
R2
VOUT =
(R1 + R2)
x 1.204
R2
Optional capacitor
reduces output noise
and improves
transient response.
Figure 32. Typical Application Circuit for
Adjustable-Voltage Version
R1 and R2 can be calculated for any output voltage
using the formula shown in Figure 32. Sample
resistor values for common output voltages are
shown in Figure 2.
For best accuracy, make the parallel combination of
R1 and R2 approximately equal to 19kΩ. This 19kΩ,
Copyright © 2006–2009, Texas Instruments Incorporated
INPUT AND OUTPUT CAPACITOR
REQUIREMENTS
Although an input capacitor is not required for stability
if input impedance is very low, it is good analog
design practice to connect a 0.1µF to 1µF low
equivalent series resistance (ESR) capacitor across
the input supply near the regulator. This capacitor
counteracts reactive input sources and improves
transient response, noise rejection, and ripple
rejection. A higher-value capacitor may be necessary
if large, fast rise-time load transients are anticipated
or the device is located several inches from the
power source.
The TPS737xx requires a 1.0µF output capacitor for
stability. It is designed to be stable for all available
types and values of capacitors. In applications where
multiple low ESR capacitors are in parallel, ringing
may occur when the product of COUT and total ESR
drops below 50nΩF. Total ESR includes all parasitic
resistances, including capacitor ESR and board,
socket, and solder joint resistance. In most
applications, the sum of capacitor ESR and trace
resistance will meet this requirement.
ON
Optional input capacitor.
May improve source
impedance, noise, or PSRR.
in addition to the internal 8kΩ resistor, presents the
same impedance to the error amp as the 27kΩ
bandgap reference output. This impedance helps
compensate for leakages into the error amp
terminals.
OUTPUT NOISE
A precision bandgap reference is used to generate
the internal reference voltage, VREF. This reference is
the dominant noise source within the TPS737xx and
it generates approximately 32µVRMS (10Hz to
100kHz) at the reference output (NR). The regulator
control loop gains up the reference noise with the
same gain as the reference voltage, so that the noise
voltage of the regulator is approximately given by:
(R1 ) R2)
VOUT
V N + 32mVRMS
+ 32mVRMS
R2
VREF
(1)
Since the value of VREF is 1.2V, this relationship
reduces to:
ǒmVV Ǔ
V NǒmVRMSǓ + 27
RMS
V OUT (V)
(2)
for the case of no CNR.
Submit Documentation Feedback
11
TPS737xx
SBVS067I – JANUARY 2006 – REVISED MARCH 2009.................................................................................................................................................... www.ti.com
An internal 27kΩ resistor in series with the noise
reduction pin (NR) forms a low-pass filter for the
voltage reference when an external noise reduction
capacitor, CNR, is connected from NR to ground. For
CNR = 10nF, the total noise in the 10Hz to 100kHz
bandwidth is reduced by a factor of ~3.2, giving the
approximate relationship:
mVRMS
VN(mVRMS) = 8.5
x VOUT(V)
V
(3)
(
)
for CNR = 10nF.
This noise reduction effect is shown as RMS Noise
Voltage vs CNR in the Typical Characteristics section.
The TPS73701 adjustable version does not have the
NR pin available. However, connecting a feedback
capacitor, CFB, from the output to the feedback pin
(FB) reduces output noise and improve load transient
performance. This capacitor should be limited to
0.1µF.
The TPS737xx uses an internal charge pump to
develop an internal supply voltage sufficient to drive
the gate of the NMOS pass element above VOUT. The
charge pump generates ~250µV of switching noise at
~4MHz; however, charge-pump noise contribution is
negligible at the output of the regulator for most
values of IOUT and COUT.
BOARD LAYOUT RECOMMENDATION TO
IMPROVE PSRR AND NOISE PERFORMANCE
To improve ac performance such as PSRR, output
noise, and transient response, it is recommended that
the printed circuit board (PCB) be designed with
separate ground planes for VIN and VOUT, with each
ground plane connected only at the GND pin of the
device. In addition, the ground connection for the
bypass capacitor should connect directly to the GND
pin of the device.
INTERNAL CURRENT LIMIT
The TPS737xx internal current limit helps protect the
regulator during fault conditions. Foldback current
limit helps to protect the regulator from damage
during output short-circuit conditions by reducing
current limit when VOUT drops below 0.5V. See
Figure 12 in the Typical Characteristicssection.
When shutdown capability is not required, EN can be
connected to VIN. However, the pass gate may not be
discharged using this configuration, and the pass
transistor may be left on (enhanced) for a significant
time after VIN has been removed. This scenario can
result in reverse current flow (if the IN pin is low
impedance) and faster ramp times upon power-up. In
addition, for VIN ramp times slower than a few
milliseconds, the output may overshoot upon
power-up.
DROPOUT VOLTAGE
The TPS737xx uses an NMOS pass transistor to
achieve extremely low dropout. When (VIN – VOUT) is
less than the dropout voltage (VDO), the NMOS pass
device is in its linear region of operation and the
input-to-output resistance is the RDS, ON of the NMOS
pass element.
For large step changes in load current, the TPS737xx
requires a larger voltage drop from VIN to VOUT to
avoid degraded transient response. The boundary of
this transient dropout region is approximately twice
the dc dropout. Values of VIN – VOUT above this line
ensure normal transient response.
Operating in the transient dropout region can cause
an increase in recovery time. The time required to
recover from a load transient is a function of the
magnitude of the change in load current rate, the rate
of change in load current, and the available
headroom (VIN to VOUT voltage drop). Under
worst-case conditions [full-scale instantaneous load
change with (VIN – VOUT) close to dc dropout levels],
the TPS737xx can take a couple of hundred
microseconds to return to the specified regulation
accuracy.
TRANSIENT RESPONSE
The low open-loop output impedance provided by the
NMOS pass element in a voltage follower
configuration allows operation without a 1.0µF output
capacitor. As with any regulator, the addition of
additional capacitance from the OUT pin to ground
reduces undershoot magnitude but increases its
duration. In the adjustable version, the addition of a
capacitor, CFB, from the OUT pin to the FB pin will
also improve the transient response.
ENABLE PIN AND SHUTDOWN
The enable pin (EN) is active high and is compatible
with standard TTL-CMOS levels. A VEN below 0.5V
(max) turns the regulator off and drops the GND pin
current to approximately 10nA. When EN is used to
shutdown the regulator, all charge is removed from
the pass transistor gate, and the output ramps back
up to a regulated VOUT (see Figure 23).
12
Submit Documentation Feedback
Copyright © 2006–2009, Texas Instruments Incorporated
TPS737xx
www.ti.com.................................................................................................................................................... SBVS067I – JANUARY 2006 – REVISED MARCH 2009
The TPS737xx does not have active pull-down when
the output is over-voltage. This architecture allows
applications that connect higher voltage sources,
such as alternate power supplies, to the output. This
architecture also results in an output overshoot of
several percent if the load current quickly drops to
zero when a capacitor is connected to the output. The
duration of overshoot can be reduced by adding a
load resistor. The overshoot decays at a rate
determined by output capacitor COUT and the
internal/external load resistance. The rate of decay is
given by:
(Fixed voltage version)
VOUT
dV +
dT
C OUT 80kW ø R LOAD
(4)
(Adjustable voltage version)
V OUT
dV +
dT
C OUT 80kW ø (R 1 ) R 2) ø R LOAD
(5)
REVERSE CURRENT
The NMOS pass element of the TPS737xx provides
inherent protection against current flow from the
output of the regulator to the input when the gate of
the pass device is pulled low. To ensure that all
charge is removed from the gate of the pass element,
the EN pin must be driven low before the input
voltage is removed. If this is not done, the pass
element may be left on because of stored charge on
the gate.
After the EN pin is driven low, no bias voltage is
needed on any pin for reverse current blocking. Note
that reverse current is specified as the current flowing
out of the IN pin because of voltage applied on the
OUT pin. There will be additional current flowing into
the OUT pin as a result of the 80kΩ internal resistor
divider to ground (see Figure 1 and Figure 2).
Any tendency to activate the thermal protection circuit
indicates excessive power dissipation or an
inadequate heatsink. For reliable operation, junction
temperature should be limited to +125°C maximum.
To estimate the margin of safety in a complete design
(including
heatsink),
increase
the
ambient
temperature until the thermal protection is triggered;
use worst-case loads and signal conditions. For good
reliability, thermal protection should trigger at least
+35°C above the maximum expected ambient
condition of your application. This produces a
worst-case junction temperature of +125°C at the
highest
expected
ambient
temperature
and
worst-case load.
The internal protection circuitry of the TPS737xx has
been designed to protect against overload conditions.
It was not intended to replace proper heatsinking.
Continuously running the TPS737xx into thermal
shutdown degrades device reliability.
POWER DISSIPATION
The ability to remove heat from the die is different for
each
package
type,
presenting
different
considerations in the PCB layout. The PCB area
around the device that is free of other components
moves the heat from the device to the ambient air.
Performance data for JEDEC low- and high-K boards
are shown in the Power Dissipation Ratings table.
Using heavier copper will increase the effectiveness
in removing heat from the device. The addition of
plated through-holes to heat-dissipating layers also
improves the heatsink effectiveness.
Power dissipation depends on input voltage and load
conditions. Power dissipation (PD) is equal to the
product of the output current times the voltage drop
across the output pass element (VIN to VOUT):
P D + ǒVIN * VOUTǓ
I OUT
(6)
For the TPS73701, reverse current may flow when
VFB is more than 1.0V above VIN.
Power dissipation can be minimized by using the
lowest possible input voltage necessary to assure the
required output voltage.
THERMAL PROTECTION
PACKAGE MOUNTING
Thermal protection disables the output when the
junction temperature rises to approximately +160°C,
allowing the device to cool. When the junction
temperature cools to approximately +140°C, the
output circuitry is again enabled. Depending on power
dissipation, thermal resistance, and ambient
temperature, the thermal protection circuit may cycle
on and off. This cycling limits the dissipation of the
regulator, protecting it from damage due to
overheating.
Solder pad footprint recommendations for the
TPS737xx are presented in Application Bulletin
Solder Pad Recommendations for Surface-Mount
Devices (SBFA015), available from the Texas
Instruments web site at www.ti.com.
Copyright © 2006–2009, Texas Instruments Incorporated
Submit Documentation Feedback
13
PACKAGE OPTION ADDENDUM
www.ti.com
8-Jun-2009
PACKAGING INFORMATION
(1)
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS73701DCQ
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DCQG4
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DCQR
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DCQRG4
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DRBR
ACTIVE
SON
DRB
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DRBRG4
ACTIVE
SON
DRB
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DRBT
ACTIVE
SON
DRB
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73701DRBTG4
ACTIVE
SON
DRB
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73718DCQ
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73718DCQG4
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73718DCQR
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73718DCQRG4
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73725DCQ
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73725DCQG4
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73725DCQR
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73725DCQRG4
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73730DRBR
ACTIVE
SON
DRB
8
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73730DRBT
ACTIVE
SON
DRB
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73733DCQ
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73733DCQG4
ACTIVE
SOT-223
DCQ
6
78
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73733DCQR
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73733DCQRG4
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73734DCQ
ACTIVE
SOT-223
DCQ
6
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS73734DCQR
ACTIVE
SOT-223
DCQ
6
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
78
The marketing status values are defined as follows:
Addendum-Page 1
Lead/Ball Finish
MSL Peak Temp (3)
PACKAGE OPTION ADDENDUM
www.ti.com
8-Jun-2009
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS73733 :
• Automotive: TPS73733-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jun-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
TPS73701DCQR
SOT-223
DCQ
6
2500
330.0
TPS73701DRBR
SON
DRB
8
3000
TPS73701DRBT
SON
DRB
8
250
TPS73718DCQR
SOT-223
DCQ
6
TPS73725DCQR
SOT-223
DCQ
TPS73730DRBR
SON
TPS73730DRBT
SON
TPS73733DCQR
TPS73734DCQR
12.4
6.8
7.3
1.88
8.0
12.0
Q3
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
2500
330.0
12.4
6.8
7.3
1.88
8.0
12.0
Q3
6
2500
330.0
12.4
6.8
7.3
1.88
8.0
12.0
Q3
DRB
8
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
DRB
8
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
SOT-223
DCQ
6
2500
330.0
12.4
6.8
7.3
1.88
8.0
12.0
Q3
SOT-223
DCQ
6
2500
330.0
12.4
6.8
7.3
1.88
8.0
12.0
Q3
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jun-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS73701DCQR
SOT-223
DCQ
6
2500
358.0
335.0
35.0
TPS73701DRBR
SON
DRB
8
3000
346.0
346.0
29.0
TPS73701DRBT
SON
DRB
8
250
190.5
212.7
31.8
TPS73718DCQR
SOT-223
DCQ
6
2500
358.0
335.0
35.0
TPS73725DCQR
SOT-223
DCQ
6
2500
358.0
335.0
35.0
TPS73730DRBR
SON
DRB
8
3000
346.0
346.0
29.0
TPS73730DRBT
SON
DRB
8
250
190.5
212.7
31.8
TPS73733DCQR
SOT-223
DCQ
6
2500
358.0
335.0
35.0
TPS73734DCQR
SOT-223
DCQ
6
2500
358.0
335.0
35.0
Pack Materials-Page 2
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