NSB1010XV5T5 Preferred Device Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB1010XV5T5, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch Tape and Reel • This device is manufactured with a Pb−Free external lead finish only. MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit 357 (Note 1) 2.9 (Note 1) mW mW/°C Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C PD Thermal Resistance Junction-to-Ambient RqJA 350 (Note 1) °C/W Symbol Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C PD Thermal Resistance Junction-to-Ambient RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 3 2 R1 1 R2 Q2 R2 Q1 R1 4 5 MARKING DIAGRAM 5 5 1 SOT−553 CASE 463B US D 1 US = Specific Device Code D = Date Code ORDERING INFORMATION Device Package Shipping † NSB1010XV5T5 SOT−553 (Pb−Free) 2 mm pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 0 1 Publication Order Number: NSB1010XV5/D NSB1010XV5T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = −50 V, IE = 0) ICBO − − −100 nAdc Collector-Emitter Cutoff Current (VCB = −50 V, IB = 0) ICEO − − −500 nAdc Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) IEBO − − −1.5 mAdc Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0) V(BR)CBO −50 − − Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = −2.0 mA, IB = 0) V(BR)CEO −50 − − Vdc VCE(sat) − − −0.25 Vdc DC Current Gain (VCE = −10 V, IC = −5.0 mA) hFE 15 27 − − Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW) VOL − − −0.2 Vdc Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW) ON CHARACTERISTICS (Note 2) Collector-Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) VOH −4.9 − − Vdc Input Resistor R1 3.3 4.7 6.1 kW Resistor Ratio R1/R2 0.8 1.0 1.2 − Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO − − 0.5 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 − Q2 TRANSISTOR: NPN OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 7.0 10 13 kW Resistor Ratio R1/R2 0.8 1.0 1.2 − 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 150 NSB1010XV5T5 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 25°C 10 TA = −25°C 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 4. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 Figure 5. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 3 50 10 NSB1010XV5T5 1000 1 VCE = 10 V IC/IB = 10 25°C TA=−25°C 0.1 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 10 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 4 NSB1010XV5T5 PACKAGE DIMENSIONS SOT−553 5−LEAD PACKAGE CASE 463B−01 ISSUE A A −X− 5 C 4 1 G 2 B −Y− 3 D K S DIM A B C D G J K S J 5 PL 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 NSB1010XV5T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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